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公开(公告)号：US20140106565A1
公开(公告)日：2014-04-17
申请号：US14106166
申请日：2013-12-13
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。
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公开(公告)号：US20130192761A1
公开(公告)日：2013-08-01
申请号：US13754733
申请日：2013-01-30
申请人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
CPC分类号： C23C16/54 , B05C13/00 , C23C16/45551
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.
摘要翻译： 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。
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公开(公告)号：US20130164445A1
公开(公告)日：2013-06-27
申请号：US13720301
申请日：2012-12-19
IPC分类号： C23C16/448
CPC分类号： C23C16/448 , C23C16/44 , C23C16/45551 , C23C16/45563 , C23C16/45574
摘要： Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.
摘要翻译： 提供了包括细长外壳的组件，其包括在处理室中经历的温度下耐受热膨胀的材料。 至少一个加热元件沿着细长外壳的纵向轴线延伸穿过开放的内部区域，允许气体流沿基本上垂直于纵向轴线的方向通过加热元件。 还描述了使用加热元件处理衬底以激发气态前体物质的方法。
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公开(公告)号：US20130143415A1
公开(公告)日：2013-06-06
申请号：US13308849
申请日：2011-12-01
申请人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
发明人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
IPC分类号： H01L21/31 , B67D7/06 , C23C16/455
CPC分类号： C23C16/45551
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.
摘要翻译： 提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多数。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。
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公开(公告)号：US20130137267A1
公开(公告)日：2013-05-30
申请号：US13307524
申请日：2011-11-30
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。
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公开(公告)号：US20120225219A1
公开(公告)日：2012-09-06
申请号：US13189705
申请日：2011-07-25
申请人： Joseph Yudovsky
发明人： Joseph Yudovsky
IPC分类号： C23C16/46 , C23C16/458 , C23C16/455
CPC分类号： C23C16/45551 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/46 , C23C16/463 , C23C16/54
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature.
摘要翻译： 提供了包括具有热元件的气体分配板的原子层沉积设备和方法。 热元件能够通过暂时升高或降低温度来局部地改变基板表面的一部分的温度。
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公开(公告)号：US20120225193A1
公开(公告)日：2012-09-06
申请号：US13189693
申请日：2011-07-25
申请人： Joseph Yudovsky
发明人： Joseph Yudovsky
IPC分类号： C23C16/455 , B05D5/12
CPC分类号： C23C16/45551
摘要： Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently.
摘要翻译： 提供了诸如原子层沉积（ALD）室的衬底处理装置，其包括在摆动支撑臂上的衬底支撑件和可选地位于与气体分配板相邻但距离气体分配板的多个排气管道。 衬底处理装置中的一个或多个可以是用于同时处理多个衬底的集成集群工具的部件。
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38.发明申请公开(公告)号：US20120192792A1
公开(公告)日：2012-08-02
申请号：US13445354
申请日：2012-04-12
IPC分类号： C23C16/458 , C23C16/50
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： CVD and ALD methods of using a batch processing chamber to process substrates are described. A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译： 描述了使用批处理室来处理衬底的CVD和ALD方法。 批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。 激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。
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公开(公告)号：US20120103425A1
公开(公告)日：2012-05-03
申请号：US13189953
申请日：2011-07-25
申请人： Joseph Yudovsky , Dennis L. DeMars
发明人： Joseph Yudovsky , Dennis L. DeMars
IPC分类号： F15D1/00
CPC分类号： G01F1/68 , G01F1/688 , G01F15/10 , G01F15/14 , H01L21/67017 , Y10T137/0324 , Y10T137/8158
摘要： Devices and methods for controlling flow to a processing chamber are disclosed. The devices comprise a flow meter, an inlet tube in fluid communication with the flow meter, an outlet tube in fluid communication with the outlet of the flow meter, and thermal insulation encompassing at least a portion of the flow meter, at least a portion of the inlet tube and at least a portion of the outlet tube.
摘要翻译： 公开了用于控制到处理室的流动的装置和方法。 所述装置包括流量计，与所述流量计流体连通的入口管，与所述流量计的出口流体连通的出口管以及包含所述流量计的至少一部分的热绝缘，至少一部分 入口管和出口管的至少一部分。
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公开(公告)号：US07962990B2
公开(公告)日：2011-06-21
申请号：US12243700
申请日：2008-10-01
CPC分类号： B08B1/04 , H01L21/67046 , H01L21/67219
摘要： Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using scrubber brushes. One embodiment of the present invention provides a substrate cleaner comprises two scrubber brush assemblies movably disposed in a processing volume. The two scrubber brush assemblies are configured to contact and clean opposite surfaces of a substrate disposed in the processing volume. The substrate cleaner also comprises a positioning assembly configured to simultaneously adjust positions of the two scrubber brush assemblies, wherein the positioning assembly makes substantially the same amount of adjustment to the first and second scrubber brush assemblies in mirror symmetry.
摘要翻译： 本发明的实施例涉及使用洗涤器刷清洁衬底的装置和方法。 本发明的一个实施例提供了一种基板清洁器，包括可移动地设置在处理体积中的两个洗涤刷组件。 两个洗涤器刷组件被配置为接触并清洁设置在处理体积中的基板的相对表面。 衬底清洁器还包括配置成同时调节两个洗涤器刷组件的位置的定位组件，其中定位组件以镜面对称的方式对第一和第二洗刷器刷组件进行基本相同的调节量。
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