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22 条记录 (耗时 0.031 秒)

    Rotary Substrate Processing System
    1.
    发明申请
    Rotary Substrate Processing System 审中-公开
    旋转底材加工系统

    公开(公告)号：US20130192761A1

    公开(公告)日：2013-08-01

    申请号：US13754733

    申请日：2013-01-30

    申请人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

    发明人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

    IPC分类号： C23C16/54 ,  B05C13/00

    CPC分类号： C23C16/54 ,  B05C13/00 ,  C23C16/45551

    摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

    摘要翻译： 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

    Multi-Chamber Substrate Processing System
    2.
    发明申请
    Multi-Chamber Substrate Processing System 审中-公开
    多腔基底处理系统

    公开(公告)号：US20130196078A1

    公开(公告)日：2013-08-01

    申请号：US13754771

    申请日：2013-01-30

    申请人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

    发明人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

    IPC分类号： C23C16/458

    CPC分类号： C23C16/4584 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/67742

    摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon.

    摘要翻译： 提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。 基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。 每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。 设置在基板支撑组件上的多个基板在基板处理平台内进出处理。 衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

    Flux-contained welding wire
    5.
    发明授权
    Flux-contained welding wire 有权
    焊剂焊丝

    公开(公告)号：US06710301B2

    公开(公告)日：2004-03-23

    申请号：US10196815

    申请日：2002-07-17

    申请人： Teiichiro Saito ,  Tadashi Ito ,  Kazuo Tsujikawa ,  Toshio Yoshizawa ,  Toshiaki Fujita ,  Kanehisa Tanaka

    发明人： Teiichiro Saito ,  Tadashi Ito ,  Kazuo Tsujikawa ,  Toshio Yoshizawa ,  Toshiaki Fujita ,  Kanehisa Tanaka

    IPC分类号： B23K3502

    CPC分类号： B23K35/3033 ,  B23K35/0266 ,  B23K35/0272

    摘要： A flux-contained welding wire is provided wherein a conductive core wire can be disposed without any complicate manufacturing steps performed on a metal outer layer. Flux is filled inside of the metal outer layer. The conductive core wire is disposed nearly in the center of the flux without being supported by the metal outer layer. The flux contains 20-80 weight % of metal powder. A weight % of the weight of the flux to the weight of the welding wire per unit length is set in a range of 6.5-30 weight %. The weight % of the weight of the conductive core wire to the weight of the welding wire per unit length is set in a range of 1.5-15 weight %.

    摘要翻译： 提供了一种焊剂焊丝，其中可以设置导电芯线，而不会在金属外层上执行任何复杂的制造步骤。 助焊剂填充在金属外层的内部。 导电芯线几乎位于焊剂的中心，而不被金属外层支撑。 焊剂含有20-80重量％的金属粉末。 焊剂重量与焊丝每单位长度重量的重量百分比设定在6.5-30重量％的范围内。 导电芯线的重量与每单位长度焊丝重量的重量百分比设定在1.5-15重量％的范围内。

    Process for chlorine trifluoride chamber cleaning
    6.
    发明授权
    Process for chlorine trifluoride chamber cleaning 失效
    三氟化氯室清洗工艺

    公开(公告)号：US5849092A

    公开(公告)日：1998-12-15

    申请号：US805459

    申请日：1997-02-25

    申请人： Ming Xi ,  Kazuhiro Nishina ,  Steve (Aihua) Chen ,  Toshiaki Fujita

    发明人： Ming Xi ,  Kazuhiro Nishina ,  Steve (Aihua) Chen ,  Toshiaki Fujita

    IPC分类号： C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  B08B7/00 ,  B08B9/00

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

    摘要： A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and dilute the etchant gas from these areas for part of the cleaning process, while heavily-deposited areas are exposed to a higher concentration of the etchant gas for a longer period of time. The blanketing gas is turned off for another part of the cleaning process so that these areas are also cleaned.

    摘要翻译： 描述了在基板处理操作期间在基板处理系统内积聚的颗粒和残余物的清除方法，而不用过滤系统部件。 一种方法包括以下步骤：在完成基板处理操作之后，使包含用惰性载气稀释的三氟化氯（CIF3）的蚀刻剂气体流入处理室。 具有最大累积量的室内的系统部分被优先加热以便于对这些部件进行更广泛的清洁。 室内较少堆积的室内部分系统通过保持其比重沉积部分冷却约200℃来保护免于过蚀刻。 将重沉积的室部件加热到至少约400℃的温度，允许使用较低浓度的蚀刻剂气体用于清洁过程，而不是较低温度过程将允许。 蚀刻剂气体与室中的颗粒和残余物反应，减少了颗粒相关缺陷和沉积物积聚。 另一种方法包括用非反应性气体覆盖室内轻度沉积的区域，以便从这些区域置换和稀释蚀刻剂气体用于部分清洁过程，同时沉积的区域暴露于较高浓度的蚀刻剂气体较长时间 一段的时间。 对于清洁过程的另一部分，遮盖气体被关闭，使得这些区域也被清洁。

    Method of manufacturing a thermistor element
    8.
    发明授权
    Method of manufacturing a thermistor element 有权
    制造热敏电阻元件的方法

    公开(公告)号：US08607440B2

    公开(公告)日：2013-12-17

    申请号：US13120804

    申请日：2009-07-27

    申请人： Toshiaki Fujita ,  Kazutaka Fujiwara ,  Takashi Yamaguchi

    发明人： Toshiaki Fujita ,  Kazutaka Fujiwara ,  Takashi Yamaguchi

    IPC分类号： H01K7/02 ,  H01K7/04

    CPC分类号： H01C7/008 ,  C04B35/42 ,  C04B35/62685 ,  C04B37/021 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3267 ,  C04B2235/6021 ,  C04B2235/9623 ,  C04B2237/345 ,  C04B2237/408 ,  C04B2237/62 ,  C04B2237/84 ,  H01C7/04

    摘要： Disclosed is a manufacturing method for a thermistor element having a step wherein a thermistor raw material powder formed from a metal oxide, an organic binder powder, and a solvent are mixed and kneaded to form a clay, a step wherein the clay is extrusion-molded by means of a molding die to form a rod-shaped, green molded body having multiple through-holes, a step wherein the rod-shaped green molded body is dried to form a rod-shaped dried molded body, a step wherein the rod-shaped dried formed body is cut to a prescribed length to form a cut molded body having through-holes, and a step wherein lead wires are introduced into the through-holes of the cut molded body and firing is then performed to form a metal oxide sintered body for thermistor use from the cut molded body.

    摘要翻译： 公开了一种具有以下步骤的热敏电阻元件的制造方法：其中将由金属氧化物，有机粘合剂粉末和溶剂形成的热敏电阻原料粉末混合并捏合以形成粘土，其中将粘土挤出成型 通过成型模具形成具有多个通孔的棒状的绿色成形体，将棒状的生坯成型体干燥形成棒状的干燥成形体的工序， 将成形干燥的成形体切割成规定长度以形成具有通孔的切割成型体，以及将导线引入切割成型体的通孔并进行烧成以形成金属氧化物烧结体的步骤 用于从切割成型体使用热敏电阻的主体。