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    SEMICONDUCTOR DEVICE, DISPLAY PANEL, AND METHOD FOR MANUFACTURING DISPLAY PANEL
    31.
    发明申请
    SEMICONDUCTOR DEVICE, DISPLAY PANEL, AND METHOD FOR MANUFACTURING DISPLAY PANEL 审中-公开

    公开(公告)号：US20190115328A1

    公开(公告)日：2019-04-18

    申请号：US16083134

    申请日：2017-03-07

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  June O SONG

    IPC: H01L25/13 ,  H01L33/54 ,  H01L33/20 ,  H01L33/62 ,  H01L33/00

    Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT PACKAGE INCLUDING THE SAME
    32.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT PACKAGE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190051801A1

    公开(公告)日：2019-02-14

    申请号：US16075490

    申请日：2017-02-03

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Jae Won SEO ,  Sang Youl LEE ,  Woo Sik LIM

    IPC: H01L33/62 ,  H01L33/10 ,  H01L33/38 ,  H01L33/32

    Abstract: A light-emitting element according to an embodiment comprises: a light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer formed between the first and second conductive type semiconductor layers; a reflective layer formed on the second conductive type semiconductor layer; a capping layer formed on the reflective layer to surround the reflective layer; a first electrode electrically connected with the first conductive type semiconductor layer; a first bonding pad electrically connected with the first electrode; and a second bonding pad electrically connected with the second electrode, wherein the light-emitting structure includes a recess extending to a region of the first conductive type semiconductor layer through the second conductive type semiconductor layer and the active layer; the first electrode is formed within the recess and electrically connected with the first conductive type semiconductor layer, and includes a region bent along a side surface of the second bonding pad; the reflective layer is formed to be spaced apart from the recess; and the capping layer includes a transparent electrode.

    LIGHT EMITTING DEVICE
    34.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150349220A1

    公开(公告)日：2015-12-03

    申请号：US14725469

    申请日：2015-05-29

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Ji Hyung MOON ,  Sang Youl LEE ,  Bum Doo PARK ,  Chung Song KIM ,  Sang Rock PARK ,  Byung Hak JEONG ,  Tae Yong LEE

    IPC: H01L33/60 ,  H01L33/30

    CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46

    Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

    Abstract translation: 公开了一种发光装置，其包括发光结构，该发光结构包括第一导电半导体层，第一导电半导体层下的有源层和有源层下的第二导电半导体层，与第一导电半导体层电连接的第一电极 在发光结构下方的镜面层，在镜面层和发光结构之间的窗口半导体层，反射层下面的反射层，反射层和窗口半导体层之间的导电接触层， 第二导电半导体层，以及在该反射层下方的导电支撑基板。 窗口半导体层包括掺杂较高掺杂剂浓度的C掺杂的P基半导体。 导电接触层包括与镜面层的材料不同的材料，其厚度比窗口半导体层的厚度薄。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    35.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20150236212A1

    公开(公告)日：2015-08-20

    申请号：US14704685

    申请日：2015-05-05

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE

    IPC: H01L33/42 ,  H01L33/40

    CPC classification number: H01L33/42 ,  H01L33/08 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.

    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    36.
    发明申请
    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20150069325A1

    公开(公告)日：2015-03-12

    申请号：US14540881

    申请日：2014-11-13

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE

    IPC: H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/0025 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42

    Abstract: A light emitting device is provided, including a substrate and a light emitting structure on the substrate, comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first and second semiconductor layers. The substrate has at least one side surface extending outwardly. The at least one side surface includes a first portion, a transition portion connected to the first portion, and a second portion connected to the transition portion, the first portion provides a first obtuse inclination angle with reference to the bottom surface of the substrate and the transition portion provides a second obtuse inclination angle with reference to the bottom surface of the substrate, the second obtuse inclination angle is larger than the first obtuse inclination angle. The second portion includes a vertical side surface with reference to the bottom surface of the substrate.

    Abstract translation: 提供了一种发光器件，其包括在衬底上的衬底和发光结构，包括第一半导体层，第一半导体层上的第二半导体层以及第一和第二半导体层之间的有源层。 衬底具有向外延伸的至少一个侧表面。 所述至少一个侧表面包括第一部分，连接到第一部分的过渡部分和连接到过渡部分的第二部分，第一部分相对于基底的底表面提供第一钝角倾斜角度， 过渡部分相对于基板的底面提供第二钝角倾斜角，第二钝角倾斜角大于第一钝角倾斜角。 第二部分包括相对于基底的底表面的垂直侧表面。

    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    38.
    发明申请
    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20140138712A1

    公开(公告)日：2014-05-22

    申请号：US14166583

    申请日：2014-01-28

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE

    IPC: H01L33/20

    CPC classification number: H01L33/0025 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42

    Abstract: A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one of the plurality of electrodes is placed on the first semiconductor layer. The light emitting device includes a substrate including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion. An area of the flat top surface of the first portion is larger than an area of the flat bottom surface of the second portion.

    Abstract translation: 提供了一种发光器件，包括第一半导体层，设置在第一半导体层上的第二半导体层，第一半导体层和第二半导体层之间的有源层以及多个电极。 第一半导体层具有使多个电极中的一个放置在第一半导体层上的降压区域。 发光装置包括：基板，包括具有平坦顶面的第一部分，具有平坦底面的第二部分，并设置在第一部分下方;以及侧部，设置在第一部分和第二部分之间。 第一部分的平坦顶表面的区域大于第二部分的平坦底面的面积。

    LIGHT-EMITTING DEVICE
    40.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20190115509A1

    公开(公告)日：2019-04-18

    申请号：US16089944

    申请日：2017-03-29

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK

    IPC: H01L33/62 ,  H01L33/40 ,  H01L33/50 ,  H01L33/32 ,  F21V8/00 ,  G02F1/1335

    Abstract: One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.

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