公开(公告)号：US06177711B1

公开(公告)日：2001-01-23

申请号：US08931745

申请日：1997-09-16

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L2972

CPC分类号： H01L31/076 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/036 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion element has a substrate, a lower conductive layer, a first doped layer, an i-layer, a second doped layer, and an upper conductive layer, wherein a surface of the lower conductive layer has an uneven configuration, the i-layer contains prismatic crystalline grains, and longitudinal directions of the prismatic crystalline grains are inclined with respect to a direction of a normal line to the substrate. A percentage of an overall volume of prismatic crystalline grains, each having an angle, defined below, of 20° or less, is 70% or more with respect to an overall volume of the i-layer; the angle is defined as an angle between a straight line passing a prismatic crystalline grain and being parallel to the longitudinal direction thereof and a straight line passing the prismatic crystalline grain out of straight lines taking shortest courses between the interface between the first doped layer and the i-layer and the interface between the second doped layer and the i-layer. The photoelectric conversion element of the present invention is improved in characteristics including photoelectric conversion efficiency, open-circuit voltage, short-circuit photocurrent, low-illuminance open-circuit voltage, and leak current. In addition, durability and upon are enhanced in an outdoor exposure test and long-term irradiation of light. Further, the cost of the further electric conversion element can be decreased greatly.

摘要翻译： 光电转换元件具有基板，下导电层，第一掺杂层，i层，第二掺杂层和上导电层，其中下导电层的表面具有不均匀的构造， 层包含棱柱状晶粒，棱柱状晶粒的长度方向相对于与基板的法线方向倾斜。 相对于i层的总体积，每个具有20°或更小的下面定义的角度的棱柱状晶粒的总体积的百分比为70％以上; 该角度被定义为通过棱柱形晶粒并且平行于其纵向方向的直线之间的角度，以及在第一掺杂层和第二掺杂层之间的界面 i层和第二掺杂层与i层之间的界面。 本发明的光电转换元件在光电转换效率，开路电压，短路光电流，低照度开路电压，漏电流等特性方面得到改善。 此外，在室外暴露试验和长期照射光下，耐久性和耐久性得到提高。 此外，可以大大降低进一步的电转换元件的成本。

公开(公告)号：US5849108A

公开(公告)日：1998-12-15

申请号：US638501

申请日：1996-04-26

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0264 ,  H01L31/036 ,  H01L31/0392

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548

摘要： A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.

摘要翻译： 光电元件具有导电表面的衬底，含氟的氧化锌层和非单晶半导体层，其中氧化锌层（i）的氟含量在层的厚度上变化，（ii） 在与衬底的界面处至少是最小的，并且（iii）朝着半导体层增加。

公开(公告)号：US5714010A

公开(公告)日：1998-02-03

申请号：US450620

申请日：1995-05-25

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构进行卷取，从而沿纵向方向连续地移动基板 ; 通过弯曲和突出所述移动的基材卷材来形成基本上封闭的成膜室，以在从所述放出机构朝向所述卷取机构移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜室中; 同时通过使用微波施加器装置在所述成膜室内辐射微波能量，所述微波施加装置设计成能够沿与微波传播方向平行的方向辐射微波能量，以在所述膜中产生微波等离子体 从而在所述连续移动的周壁的内壁面上连续地形成沉积膜以暴露于所述微波等离子体。 适用于所述方法的微波等离子体CVD装置。

公开(公告)号：US5527391A

公开(公告)日：1996-06-18

申请号：US426629

申请日：1995-04-21

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： An apparatus for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The apparatus comprises the elements of a continuous traveling band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma.

摘要翻译： 描述了根据微波等离子体CVD工艺连续地形成具有大面积的功能性沉积膜的装置。 该装置包括沿其长度包含导电构件的连续行进的带状构件的元件，在该构件中通过使用行进的带状构件来建立能够基本上保持真空的柱状成膜空间 作为成膜空间的侧壁，通过气体供给装置将用于成膜的起始气体充入成膜空间，同时通过微波天线在垂直于微波运动方向的所有方向上辐射微波 使得微波功率被供应到成膜空间以在空间中引发等离子体，由此膜沉积在构成暴露于等离子体的侧壁的连续行进的带状构件的表面上。

公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US5087542A

公开(公告)日：1992-02-11

申请号：US455227

申请日：1989-12-21

申请人： Koji Yamazaki ,  Toshimitsu Kariya ,  Tatsuyuki Aoike ,  Toshiyuki Ehara ,  Takehito Yoshino ,  Hirokazu Otoshi

发明人： Koji Yamazaki ,  Toshimitsu Kariya ,  Tatsuyuki Aoike ,  Toshiyuki Ehara ,  Takehito Yoshino ,  Hirokazu Otoshi

IPC分类号： G03G5/082 ,  G03G9/08 ,  G03G21/20

CPC分类号： G03G5/08235 ,  G03G21/206 ,  G03G9/0819

摘要： In an electrophotographic image-forming method to be practiced in an electrophotographic image-forming system including a halogen lamp light source, an optical system, a cylindrical photosensitive member, a main corona charger, an electrostatic latent image-forming mechanism, a development mechanism containing magnetic toner, a transfer sheet feeding mechanism, a transfer charger, a separating charger, a transfer sheet conveying mechanism, a cleaning mechanism and a charge-removing light source which is capable of adjusting an image-forming process speed, the improvement comprises: using an amorphous silicon light receiving member which comprises a substrate and a light receiving layer disposed on said substrate, said light receiving layer comprising a first layer capable of exhibiting a photoconductivity, a second layer capable of supporting a latent image and a third layer capable of supporting a developed image being laminated in this order on said substrate, said first layer being formed of an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, said second layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms, atoms of an element belonging to Group III of the Periodic Table, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said third layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms; and using a fine particle insulating toner having a volume average particle size in the range of 4.5 to 9 .mu.m.

摘要翻译： 在包括卤素灯光源，光学系统，圆柱形感光部件，主电晕充电器，静电潜像形成机构的电子照相图像形成系统中实施的电子照相成像方法中，包含 磁性调色剂，转印纸供给机构，转印充电器，分离充电器，转印纸传送机构，清洁机构和能够调整图像形成处理速度的电荷去除光源，其改进包括：使用 一种非晶硅光接收元件，包括基片和设置在所述基底上的光接收层，所述光接收层包括能够呈现光电导性的第一层，能够支持潜像的第二层和能够支撑潜像的第三层 显影图像依次层叠在所述基板上，所述第一层为 由含有硅原子作为基质的非晶质材料和选自氢原子和卤素原子的至少一种原子形成，所述第二层由含有硅原子作为基体的无定形材料形成，碳原子， 属于周期表第III族元素的原子和选自氢原子和卤素原子的至少一种原子，所述第三层由含有硅原子作为基体的无定形材料形成，碳 原子和选自氢原子和卤素原子的至少一种原子; 并使用体积平均粒径在4.5〜9μm的微粒绝缘调色剂。