公开(公告)号：US07301215B2

公开(公告)日：2007-11-27

申请号：US11464263

申请日：2006-08-14

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L31/105

CPC分类号： H01L31/03762 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic device includes at least a first electrode, a first-conductivity-type layer composed of non-single-crystalline silicon, a second-conductivity-type layer composed of polycrystalline silicon, a third-conductivity-type layer composed of non-single-crystalline silicon, and a second electrode, wherein the contact surface of the first electrode with respect to the first-conductivity-type layer has a shape interspersed with a plurality of projections, and the lower limit and the upper limit of the density of the projections interspersed on the surface of the first electrode satisfy the following equations, provided that the thickness of the second-conductivity-type layer is t μm: Lower limit=0.312 exp(−0.60t) pieces/μm2 Upper limit=0.387 exp(−0.39t) pieces/μm2.

摘要翻译： 光伏器件至少包括第一电极，由非单晶硅构成的第一导电型层，由多晶硅构成的第二导电型层，由非单晶硅构成的第三导电型层 晶体硅和第二电极，其中，所述第一电极相对于所述第一导电型层的接触表面具有散布有多个突起的形状，并且所述第一电极的密度的下限和上限 假设第二导电型层的厚度为tumum，散布在第一电极的表面上的突起满足以下等式：<？in-line-formula description =“In-line Formulas”end =“lead” ？>下限= 0.312 exp（-0.60t）件/ mum <2> 在线公式描述=“在线公式”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？>上限= 0.387 exp（-0.39t）pieces / mum <2>

公开(公告)号：US5421909A

公开(公告)日：1995-06-06

申请号：US24252

申请日：1993-03-01

申请人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

发明人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/0232

CPC分类号： H01L31/02167 ,  H01L31/022466 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0236 ,  Y02E10/52 ,  Y02E10/543

摘要： A photovoltaic device having a semiconductor layer; front and back electrodes; and a surface protection layer adjacent to the light incident side, wherein granules of a material different from that of the surface protection layer are disposed in the surface protection layer.

摘要翻译： 具有半导体层的光电器件; 前后电极; 以及与光入射侧相邻的表面保护层，其中与表面保护层的材料不同的材料颗粒设置在表面保护层中。

公开(公告)号：US4906542A

公开(公告)日：1990-03-06

申请号：US183998

申请日：1988-04-20

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08214

摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

公开(公告)号：US6140570A

公开(公告)日：2000-10-31

申请号：US179834

申请日：1998-10-28

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/048 ,  H01L31/052 ,  H01L31/20 ,  H01L31/04

CPC分类号： H01L31/202 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/03685 ,  H01L31/048 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a specific transparent and electrically conductive layer on a back reflecting layer, said transparent and electrically conductive layer comprising a zinc oxide material and having a light incident side surface region with a cross section having a plurality of arcs arranged while in contacted with each other, said arcs having a radius of curvature in the range of 300 .ANG. to 6 .mu.m and an angle of elevation from the center of the curvature in the range of 30 to 155.degree., and said cross section containing regions comprising said plurality of arcs at a proportion of 80% or more, compared to the entire region of the cross section.

摘要翻译： 一种在背反射层上具有特定透明导电层的光电元件，所述透明和导电层包含氧化锌材料，并且具有光入射侧表面区域，其横截面具有多个弧形排列，同时与 彼此相对，所述弧具有范围为300至6微米的曲率半径，并且曲率中心在30至155度的范围内的仰角，并且所述横截面包含区域包括所述多个 与横截面的整个区域相比，弧的比例为80％以上。

公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US5456762A

公开(公告)日：1995-10-10

申请号：US171430

申请日：1993-12-22

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0376

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。

公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

公开(公告)号：US5358811A

公开(公告)日：1994-10-25

申请号：US53822

申请日：1993-04-29

申请人： Koji Yamazaki ,  Toshimitsu Kariya ,  Tatsuyuki Aoike ,  Toshiyuki Ehara ,  Takehito Yoshino ,  Hirokazu Otoshi

发明人： Koji Yamazaki ,  Toshimitsu Kariya ,  Tatsuyuki Aoike ,  Toshiyuki Ehara ,  Takehito Yoshino ,  Hirokazu Otoshi

IPC分类号： G03G5/082 ,  G03G9/08 ,  G03G13/08 ,  G03G13/01

CPC分类号： G03G13/08 ,  G03G5/08235 ,  G03G9/0819 ,  G03G9/0821

摘要： An electrophotographic image-forming and developing method using as light receiving member an amorphous silicon light receiving member which comprises a substrate and a light receiving layer disposed on said substrate, said light receiving layer comprising a first layer capable of exhibiting a photoconductivity, a second layer capable of supporting a latent image and a third layer capable of supporting a developed image being laminated in this order on said substrate, said first layer being formed of an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, said second layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms, atoms of an element belonging to Group III of the Periodic Table, and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said third layer being formed of an amorphous material containing silicon atoms as a matrix, carbon atoms and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms; and using as said toner a fine particle insulating toner having a volume average particle size in the range of 4.5 to 9 um and an apparent viscosity at 100.degree. C. in the range of 1.times.10.sup.4 to 2.times.10.sup.5 poise.

摘要翻译： 一种电子照相图像形成和显影方法，其使用非晶硅光接收元件作为光接收元件，所述非晶硅光接收元件包括基板和设置在所述基板上的光接收层，所述光接收层包括能够呈现光电导性的第一层，第二层 能够支撑潜像和能够支持在所述基板上依次层叠的显影图像的第三层，所述第一层由含有硅原子作为基体的非晶质材料形成，以及至少一种选自 由氢原子和卤素原子组成的组，所述第二层由含有硅原子作为基体的非晶态材料形成，碳原子，属于周期表第III族的元素的原子，以及选出的至少一种原子 由氢原子和卤素原子组成的组，所述第三层由无定形配体形成 含有硅原子作为基体的碳原子和选自氢原子和卤素原子的至少一种原子; 并且使用体积平均粒度在4.5至9μm的细颗粒绝缘调色剂和在100℃下的表观粘度在1×10 4至2×105泊的范围内作为所述调色剂。

公开(公告)号：US07189917B2

公开(公告)日：2007-03-13

申请号：US10801681

申请日：2004-03-17

申请人： Naoto Okada ,  Toshimitsu Kariya

发明人： Naoto Okada ,  Toshimitsu Kariya

IPC分类号： H01L31/00

CPC分类号： H01L31/076 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a stacked photovoltaic device including: at least one pair of a first photovoltaic device and a second photovoltaic device stacked in order from a light incident side; and a selective reflection layer formed between the at least one pair of the first photovoltaic device and the second photovoltaic device and adapted to electrically connect therebetween, in which the selective reflection layer has a sheet resistance of 100 kΩ/□ or more and 100 MΩ/□ or less.

摘要翻译： 提供堆叠的光伏器件，包括：至少一对第一光伏器件和从光入射侧依次层叠的第二光伏器件; 以及形成在所述至少一对所述第一光电器件和所述第二光电器件之间并且适于在其间电连接的选择反射层，其中所述选择反射层的薄层电阻为100kΩ/□以上且100MΩ/ □以下

公开(公告)号：US06344608B2

公开(公告)日：2002-02-05

申请号：US09340464

申请日：1999-06-28

申请人： Toshimitsu Kariya ,  Masafumi Sano ,  Yutaka Nishio

发明人： Toshimitsu Kariya ,  Masafumi Sano ,  Yutaka Nishio

IPC分类号： H01L310216

CPC分类号： H01L31/076 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface is provided. The sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is lowest at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with decreased reduction even when exposed to an intense light for a long period.

摘要翻译： 提供了包括p型半导体层和由表面上彼此结合的氧化铟锡构成的透明导电层的光电元件。 透明导电层的氧化锡含量和锡含量的总和在层厚度方向上变化，并且在p型半导体层和透明导电层的接合表面处最低。 因此，提供了即使长时间暴露于强光时也具有高的光电转换效率，降低的减少的光电元件。