公开(公告)号：US20060049427A1

公开(公告)日：2006-03-09

申请号：US11041979

申请日：2005-01-26

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： H01L29/739

CPC分类号： H01L29/66462 ,  H01L27/0605 ,  H01L29/7784

摘要： A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate recess region so that the transconductance gm and the cutoff frequency fT can be set to sufficiently high values. The present device includes a first etching stop layer Schottky contacting with an end face of the gate electrode and a second etching stop layer extending to a position in the proximity of a side face of the gate electrode. The first etching stop layer is formed from a material which is easily depleted (one of materials of a group including InAlP, InP, InAsP, InSbP, InAlAsP, and InAlSbP), and the second etching stop layer is formed from a material which is hard to be depleted (one of materials of a group including InGaP, InGaAsP, InGaSbP).

摘要翻译： 公开了一种场效应型半导体器件，其中通道在栅电极正下方容易耗尽以实现E模式，但是沟道在栅极凹陷区域正下方难以耗尽，因此跨导gm和截止频率f 可以将T设定为足够高的值。 本装置包括与栅电极的端面肖特基接触的第一蚀刻停止层和延伸到栅电极的侧面附近的位置的第二蚀刻停止层。 第一蚀刻停止层由易于耗尽的材料（包括InAlP，InP，InAsP，InSbP，InAlAsP和InAlSbP的组中的一种）形成，并且第二蚀刻停止层由硬的材料形成 （包括InGaP，InGaAsP，InGaSbP的材料之一）。

公开(公告)号：US20050118815A1

公开(公告)日：2005-06-02

申请号：US10948740

申请日：2004-09-24

申请人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

发明人： Tsuyoshi Takahashi ,  Katsuya Okabe ,  Akira Hatsugai

IPC分类号： H01L27/14 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461 ,  H01L21/82 ,  H01L27/06 ,  H01L31/10 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14683

摘要： In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.

摘要翻译： 在现有的光学半导体集成电路器件中，作为防反射膜的氮化硅膜在蚀刻绝缘膜时用作蚀刻阻挡膜，并且通过湿蚀刻，绝缘膜全部被去除一次。 因此，存在加工精度差的问题。 在根据本发明的光半导体集成电路器件中，在硅衬底的顶表面上形成多层布线层之后，通过光电二极管的抗反射膜的顶表面上的绝缘层被除去 干蚀刻手段。 此时，使用多晶硅膜作为蚀刻停止膜。 因此，在根据本发明的光电二极管中，尽管使用干法蚀刻，但是由于作为防反射膜的氮化硅膜未被过度蚀刻，所以可以抑制其膜厚分散。 结果，根据本发明的光电二极管可以实现入射光的灵敏度的提高，并且可以实现小型化结构。

公开(公告)号：US06692982B2

公开(公告)日：2004-02-17

申请号：US10355220

申请日：2003-01-31

申请人： Tsuyoshi Takahashi ,  Toshiyuki Okoda

发明人： Tsuyoshi Takahashi ,  Toshiyuki Okoda

IPC分类号： H01L2100

CPC分类号： H01L29/66272 ,  H01L27/0664 ,  H01L27/1443 ,  H01L31/105

摘要： In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrative optical semiconductor integrated circuit device, a vertical pnp transistor and a photodiode have been formed, and first and second epitaxial layers and are stacked without doping. This enables a depletion layer forming region to be remarkably increased in the photodiode, and high-speed response becomes possible. Additionally, in the vertical pnp transistor, an n+ type diffusion region surrounds the transistor forming region. This can remarkably improve voltage endurance of the vertical pnp transistor 21.

摘要翻译： 在其中形成有垂直pnp晶体管和光电二极管的光学半导体集成电路器件中，本发明的优选实施例消除了两个元件的性能改进的困难。 在说明性的光学半导体集成电路器件中，已经形成了垂直pnp晶体管和光电二极管，以及第一和第二外延层，并且不掺杂地堆叠。 这使得光电二极管中的耗尽层形成区域显着增加，并且可以实现高速响应。 此外，在垂直pnp晶体管中，n +型扩散区围绕晶体管形成区域。 这可以显着提高垂直pnp晶体管21的耐压。

公开(公告)号：US06687783B1

公开(公告)日：2004-02-03

申请号：US09349320

申请日：1999-07-08

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： G06F1202

CPC分类号： G06F3/0632 ,  G06F3/0607 ,  G06F3/0619 ,  G06F3/0679 ,  G11B19/122 ,  G11B20/00086 ,  G11B27/034

摘要： When a storage medium is set in a control unit, a controller reads out device ID data, CIS data and Identify-Drive data from the storage medium. Based on the device ID data and the CIS data, the controller authenticates the storage medium and stores the Identify-Drive data. A CPU in the controller reads out replacement Identify-Drive data from a storage section in response to a command from a computer. Using the replacement Identify-Drive data, the CPU updates the Identify-Drive data stored in the controller. Hereafter the controller accesses the storage medium in accordance with conditions represented by the updated Identify-Drive data.

摘要翻译： 当存储介质设置在控制单元中时，控制器从存储介质读出设备ID数据，CIS数据和识别驱动数据。 基于设备ID数据和CIS数据，控制器对存储介质进行认证并存储识别驱动数据。 响应于来自计算机的命令，控制器中的CPU从存储部分读出替换识别驱动器数据。 使用替换的识别驱动器数据，CPU更新存储在控制器中的识别驱动器数据。 此后，控制器根据由更新的识别驱动数据表示的条件访问存储介质。

公开(公告)号：US06417519B1

公开(公告)日：2002-07-09

申请号：US09565486

申请日：2000-05-05

申请人： Kenji Imanishi ,  Tsuyoshi Takahashi

发明人： Kenji Imanishi ,  Tsuyoshi Takahashi

IPC分类号： H01L2912

CPC分类号： H01L29/66462 ,  H01L29/201 ,  H01L29/7783

摘要： A carrier transit layer made of group III-V compound semiconductor is formed on a semiconductor substrate. A carrier supply layer is formed on the carrier transit layer. The carrier supply layer supplies carriers for generating two-dimensional carrier gas in an interface between the carrier supply layer and carrier transit layer. The carrier supply layer is made of group III-V compound semiconductor which contains In as group III element. A gate electrode is disposed above a partial area of the carrier supply layer. An intermediate layer is disposed between the gate electrode and carrier supply layer. The intermediate layer is made of group III-V compound semiconductor not containing In as group III element. An ohmic electrode is disposed on both sides of the gate electrode.

摘要翻译： 在半导体衬底上形成由III-V族化合物半导体制成的载流子迁移层。 载体供给层形成在载体运送层上。 载体供给层在载体供给层和载体运送层之间的界面中提供用于产生二维载气的载体。 载体供给层由含有In作为III族元素的III-V族化合物半导体制成。 栅电极设置在载体供给层的部分区域的上方。 中间层设置在栅电极和载体供给层之间。 中间层由不含In作为III族元素的III-V族化合物半导体制成。 欧姆电极设置在栅电极的两侧。

公开(公告)号：US06376961B2

公开(公告)日：2002-04-23

申请号：US09776638

申请日：2001-02-06

申请人： Tsutomu Murakami ,  Hironori Ozaki ,  Naohiro Oketani ,  Akira Morishita ,  Hiroshi Matsui ,  Tsuyoshi Takahashi ,  Katsumi Adachi ,  Takushi Takizawa ,  Yoshihito Asao ,  Atsushi Oohashi

发明人： Tsutomu Murakami ,  Hironori Ozaki ,  Naohiro Oketani ,  Akira Morishita ,  Hiroshi Matsui ,  Tsuyoshi Takahashi ,  Katsumi Adachi ,  Takushi Takizawa ,  Yoshihito Asao ,  Atsushi Oohashi

IPC分类号： H02K100

CPC分类号： H02K3/14 ,  H02K15/0478

摘要： The invention provides a coil member of rotating electrical machinery, by which improvements in the mass production and downsizing thereof are enabled, which is a coil assembly for rotating electrical machinery, consisting of a plurality of coil combinations mounted at iron core slots, wherein the respective coil combinations 14 are inserted into slots at pitches equivalent to an appointed number of slots, and are formed of an integral coil member 21 in which the first and the second linear portions 21A and 21B alternately disposed at the inner layer side and the outer layer side in the slots, and the first and the second turning portions 21C and 21D for connecting the first and second linear portions 21A and 21B adjacent to each other outward of one end side and outward of the other end side in the lengthwise direction of the slots are integrated together. And, the first linear portion 21A of the appointed coil member 211 thereof, and the second linear portion 21B of another coil member 211 are laminated and disposed in the same slots.

摘要翻译： 本发明提供了一种旋转电机的线圈构件，通过该线圈构件能够实现大规模生产和小型化的改进，其是安装在铁芯槽处的多个线圈组合组成的用于旋转电机的线圈组件，其中相应的 线圈组合14以与指定数量的槽相等的间距插入槽中，并且由整体的线圈构件21形成，其中第一和第二直线部分21A和21B交替地设置在内层侧和外层侧 在狭槽中，并且用于将第一和第二直线部分21A和21B相互连接的第一和第二转动部分21C和21D在狭槽的一个端部侧的外侧和另一端侧的外侧在狭槽的长度方向上彼此相邻 集成在一起 并且，其指定的线圈部件211的第一直线部分21A和另一个线圈部件211的第二直线部分21B层叠并设置在相同的狭槽中。

公开(公告)号：US06141168A

公开(公告)日：2000-10-31

申请号：US568860

申请日：1995-12-05

申请人： Tsuyoshi Takahashi ,  Toshiki Kimura

发明人： Tsuyoshi Takahashi ,  Toshiki Kimura

IPC分类号： G11B5/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/035 ,  G11B5/39 ,  G11B20/10 ,  G11B20/14 ,  G11B20/18 ,  G11B5/03

CPC分类号： G11B20/10481 ,  G11B20/10009 ,  G11B20/10055 ,  G11B20/10296 ,  G11B5/012 ,  G11B5/035 ,  G11B20/1426 ,  G11B2005/0013 ,  G11B2005/0018

摘要： An automatic calibration method for a read system in which data read by a head from a recording medium is demodulated using a partial response method which includes the steps of: storing at least one of a parameter relating to a bias current fed to the head and parameters necessary for data demodulation in the read system, for a plurality of operating conditions; and automatically calibrating the at least one parameter to a preset value suitable for an operating condition.

摘要翻译： 一种用于读取系统的自动校准方法，其中使用部分响应方法来解调来自记录介质的头部的数据，其包括以下步骤：存储与馈送到头部的偏置电流有关的参数和参数 对于多个操作条件，在读取系统中进行数据解调所必需的; 并且将所述至少一个参数自动校准到适合于操作条件的预设值。

公开(公告)号：US5189578A

公开(公告)日：1993-02-23

申请号：US543425

申请日：1990-06-26

申请人： Kenji Mori ,  Hiromu Hirai ,  Haruaki Otsuki ,  Tsuyoshi Takahashi ,  Jun Naruse ,  Yuji Nishimura ,  Muneo Kawamoto

发明人： Kenji Mori ,  Hiromu Hirai ,  Haruaki Otsuki ,  Tsuyoshi Takahashi ,  Jun Naruse ,  Yuji Nishimura ,  Muneo Kawamoto

IPC分类号： G11B5/55 ,  G11B5/58 ,  G11B7/085 ,  G11B7/09 ,  G11B7/12 ,  G11B11/105 ,  G11B19/20 ,  G11B21/08 ,  G11B21/10

CPC分类号： G11B19/20 ,  G11B11/10552 ,  G11B11/10567 ,  G11B11/10576 ,  G11B11/1058 ,  G11B21/08 ,  G11B21/106 ,  G11B5/5552 ,  G11B5/5565 ,  G11B5/58 ,  G11B7/0857 ,  G11B7/0946 ,  G11B7/122 ,  G11B5/4873

摘要： A magnetic disk system utilizes both of voice coil motor and a piezoelectric element provided on a head supporting arm to precisely position a head to a predetermined position on a disk. The piezoelectric element is built in the distal end portion of the head supporting arm and is restricted in respect of its movement by a resilient mechanism which has low rigidity in the driving direction of the piezoelectric element and high rigidity in the other directions. The resilient mechanism is formed by pairs of doubled parallel leaf springs so arranged that each pair is disposed on either side of the piezoelectric element.

摘要翻译： 磁盘系统利用设置在头部支撑臂上的音圈电动机和压电元件来精确地将磁头定位在盘上的预定位置。 压电元件内置在头部支撑臂的远端部分中，并且通过弹性机构限制其运动，该弹性机构在压电元件的驱动方向上具有低刚度并且在其它方向上具有高刚度。 弹性机构由成对的双平行板簧形成，使得每一对布置在压电元件的任一侧上。

公开(公告)号：US4808097A

公开(公告)日：1989-02-28

申请号：US5704

申请日：1987-01-21

申请人： Tsuyoshi Takahashi ,  Souichi Adachi

发明人： Tsuyoshi Takahashi ,  Souichi Adachi

IPC分类号： C03B37/04 ,  C03B37/05 ,  B22D11/01

CPC分类号： C03B37/045 ,  C03B37/047 ,  C03B37/055

摘要： An apparatus for manufacturing short inorganic fibers is disclosed. A molten inorganic raw material is supplied to a rotating rotor which rotates at high speed. A gas stream delivery port jets a gas stream in surrounding with the rotating rotor. That surface of the rotating rotor which is in direct contact with a melt is formed with a deposited layer of high temperature, erosion resistant coating material.

摘要翻译： 公开了一种用于制造短无机纤维的设备。 将熔融的无机原料供给到以高速旋转的旋转转子。 气流输送口用旋转转子喷射周围的气流。 与熔体直接接触的旋转转子的表面形成有耐高温，耐腐蚀的涂层材料的沉积层。

公开(公告)号：US08669576B2

公开(公告)日：2014-03-11

申请号：US13207761

申请日：2011-08-11

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： H01L33/00

CPC分类号： H01L29/205 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/861

摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second semiconductor layer, the first semiconductor layer provided with a first semiconductor region at a given distance from an interface between the first semiconductor layer and the second semiconductor layer, and an impurity concentration of the first semiconductor region higher than an impurity concentration of the first semiconductor layer except where the first semiconductor region is formed.

摘要翻译： 半导体器件包括第一导电类型的第一半导体层，与第一半导体层接触形成的第二半导体层和与第二半导体层接触形成的第二导电类型的第三半导体层，第一半导体层 设置有从第一半导体层和第二半导体层之间的界面到给定距离的第一半导体区域，以及第一半导体区域的杂质浓度高于第一半导体区域的杂质浓度以外的第一半导体区域的杂质浓度 形成。