公开(公告)号：US06191476B1

公开(公告)日：2001-02-20

申请号：US08859571

申请日：1997-05-20

申请人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L2310

CPC分类号： G02F1/13454 ,  G02F1/133512 ,  G02F2001/136281 ,  H01L23/36 ,  H01L23/367 ,  H01L27/12 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

摘要翻译： 为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路 。 一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

公开(公告)号：US6067062A

公开(公告)日：2000-05-23

申请号：US749292

申请日：1991-08-23

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

IPC分类号： G02F1/1337 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12

CPC分类号： G02F1/13454 ,  G02F1/13378 ,  G09G3/3648 ,  H01L27/1214 ,  H01L27/1251 ,  G02F1/136213 ,  G02F2202/105 ,  G09G2330/02 ,  G09G5/006

摘要： A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.

摘要翻译： 光阀具有由电绝缘基板和形成在电绝缘基板上的半导体单晶薄膜构成的复合基板。 包含半导体开关元件的像素阵列形成在半导体单晶薄膜中。 在半导体单晶薄膜中形成具有电路元件的外围电路，从而获得小型高速光阀。 X驱动器和Y驱动器电路形成在半导体单晶薄膜中，并由诸如视频信号处理电路的控制电路控制，该电路接收并处理从外部源直接输入的视频信号。 外围电路可以是用于感测存储在像素阵列的每个像素中的电荷的DRAM读出放大器，以检测像素阵列中的缺陷。 外围电路可以是用于检测入射光的强度以监视光阀的光源的性能的光电传感器电路。 外围电路可以是用于检测光阀的液晶层的温度的温度传感器，并且可以由形成在半导体单晶薄膜中的达林顿连接的NPN晶体管组成。 外围电路也可以是用于将入射光转换为电能以向像素阵列，X驱动器和Y驱动器电路和外围电路中的至少一个供电的太阳能电池。

公开(公告)号：US6028338A

公开(公告)日：2000-02-22

申请号：US463729

申请日：1995-06-05

申请人： Yutaka Saito ,  Jun Osanai ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Yutaka Saito ,  Jun Osanai ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/04 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L23/62 ,  H01L29/76

CPC分类号： H01L27/0266 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device has a peripheral transistor having a strengthened ESD resistance for external connection. The peripheral transistor has a channel structure effective to release an electrostatic stress current more efficiently than an internal transistor of the semiconductor integrated circuit. In one embodiment, the peripheral transistor has a channel portion that is shorter than the channel portion of an internal transistor. In another embodiment, the peripheral transistor has a substrate contact, a ground line, and an additional resistor interconnection between them to efficiently release an electrostatic stress current. In another embodiment, the peripheral transistor has an asymmetric channel structure so that the distance between the source contact and the gate electrode is set shorter than the distance between the drain contact and the gate electrode. In a further embodiment, the peripheral transistor has a drain region and a gate insulating film having a portion of the insulating film that is thinner than the rest of the gate insulating film. In another embodiment, a gate contact is electrically connected between a gate electrode and a metal gate line of the peripheral transistor to reduce a resistance therebetween. In another embodiment, the peripheral transistor has a transistor breakdown voltage that is smaller than a gate breakdown voltage to efficiently release electrostatic stress current.

摘要翻译： 半导体集成电路器件具有用于外部连接的具有增强的ESD电阻的外围晶体管。 外围晶体管具有有效地比半导体集成电路的内部晶体管更有效地释放静电应力电流的沟道结构。 在一个实施例中，外围晶体管具有比内部晶体管的沟道部分短的沟道部分。 在另一个实施例中，外围晶体管具有衬底接触，接地线和它们之间的附加电阻器互连，以有效地释放静电应力电流。 在另一个实施例中，外围晶体管具有非对称沟道结构，使得源极接触和栅电极之间的距离被设定为短于漏极接触和栅电极之间的距离。 在另一个实施例中，外围晶体管具有漏区和栅极绝缘膜，绝缘膜的一部分比栅极绝缘膜的其余部分薄。 在另一个实施例中，栅极接触电连接在外围晶体管的栅电极和金属栅极线之间以减小它们之间的电阻。 在另一个实施例中，外围晶体管具有小于栅极击穿电压的晶体管击穿电压，以有效地释放静电应力电流。

公开(公告)号：US5925574A

公开(公告)日：1999-07-20

申请号：US865646

申请日：1992-04-10

申请人： Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima

发明人： Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima

IPC分类号： H01L21/225 ,  H01L21/331 ,  H01L21/265

CPC分类号： H01L29/66287 ,  H01L21/2254 ,  Y10S148/017 ,  Y10S148/034 ,  Y10S148/144

摘要： A method of producing a bipolar transistor composed of collector, base and emitter regions disposed sequentially on a semiconductor substrate. According to the method, a semiconductor layer is deposited on the collector region, the semiconductor layer is cleaned to expose an active surface, an impurity source gas is applied to the exposed active surface while heating the substrate to form an impurity adsorption layer, the impurity is diffused into the semiconductor layer to form the base region, another semiconductor layer is deposited on the base region, this semiconductor layer is cleaned to expose an active surface, another impurity source gas is applied to the exposed active surface while heating the substrate to form another impurity adsorption layer, and impurity is diffused into the semiconductor layer to from the impurity adsorption layer to form the emitter region.

摘要翻译： 一种制造由依次设置在半导体衬底上的集电极，基极和发射极组成的双极晶体管的方法。 根据该方法，在集电极区域上淀积半导体层，对半导体层进行清洗以露出活性表面，在对基板进行加热而形成杂质吸附层的同时，向露出的活性表面施加杂质源气体，杂质吸附层 扩散到半导体层中以形成基极区域，另一半导体层沉积在基极区上，该半导体层被清洁以暴露活性表面，另一杂质源气体被加到暴露的有源表面上，同时加热衬底形成 另一杂质吸附层，杂质从杂质吸附层扩散到半导体层中，形成发射极区域。

公开(公告)号：US5849612A

公开(公告)日：1998-12-15

申请号：US794585

申请日：1997-02-03

申请人： Hiroshi Takahashi ,  Yoshikazu Kojima

发明人： Hiroshi Takahashi ,  Yoshikazu Kojima

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

摘要： A thin film field effect transistor has a three-layer structure including a polycrystalline semiconductor layer to be a channel region, a conductive layer to be a gate electrode and a insulating layer to be a gate insulating film between the channel region and the gate electrode. The roughness of an interface between the channel region and the gate insulating film is less than a few nm so that the current drivability of the transistor is improved.

摘要翻译： 薄膜场效应晶体管具有包括作为沟道区的多晶半导体层，作为栅电极的导电层和作为沟道区和栅电极之间的栅极绝缘膜的绝缘层的三层结构。 沟道区域和栅极绝缘膜之间的界面的粗糙度小于几nm，从而提高了晶体管的电流驱动能力。

公开(公告)号：US5672518A

公开(公告)日：1997-09-30

申请号：US60163

申请日：1993-05-07

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265 ,  H01L31/18

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

摘要翻译： 本发明提供一种半导体光阀装置及其制造方法。 该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。 在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。 晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域 ，以便有效地防止背部通道并且切断入射光。

公开(公告)号：US5665960A

公开(公告)日：1997-09-09

申请号：US618837

申请日：1996-03-20

申请人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

IPC分类号： H01L27/146 ,  H01L31/108 ,  H04N1/028 ,  H01J40/14

CPC分类号： H04N5/3745 ,  H01L27/14654 ,  H04N5/3591 ,  H04N5/3597

摘要： A photoelectric converter device having improved residual image characteristics and composed of a transistor having a control electrode region made of a semiconductor of a first conductivity type for accumulating carriers generated by an electromagnetic wave emitted by an object to be detected, a first main electrode region made of a semiconductor of a second conductivity type, and a second main electrode region made of a semiconductor of the second conductivity type, for performing an operation to accumulate the carriers, an operation of reading signals based on the carriers, and an operation of extinguishing the carriers, wherein carriers other than those generated by the electromagnetic wave emitted by the object to be detected are generated in or injected into the control electrode region. Thus, since the amount of excess majority carriers in the control electrode region after the extinguishing operation is always kept substantially constant, improved residual image characteristics are obtained.

摘要翻译： 一种具有改善的残留图像特性并由具有由第一导电类型的半导体构成的控制电极区域的晶体管的光电转换器装置，用于累积由待检测物体发射的电磁波产生的载流子，第一主电极区域 第二导电类型的半导体和由第二导电类型的半导体构成的第二主电极区域，用于执行累积载流子的操作，基于载流子读取信号的操作以及熄灭的操作 载体，其中由待检测对象发射的电磁波产生的载流子以外的载流子生成在或控制电极区域中。 因此，由于在灭火操作之后的控制电极区域中的多数载流子的量总是保持基本恒定，因此获得了改善的残留图像特性。

公开(公告)号：US5637187A

公开(公告)日：1997-06-10

申请号：US464075

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Tsuneo Yamazaki ,  Hiroshi Suzuki ,  Masaaki Taguchi ,  Ryuichi Takano ,  Satoru Yabe

IPC分类号： G02F1/1337 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12 ,  H01L21/00

CPC分类号： G02F1/13454 ,  G02F1/13378 ,  G09G3/3648 ,  H01L27/1214 ,  H01L27/1251 ,  G02F1/136213 ,  G02F2202/105 ,  G09G2330/02 ,  G09G5/006

摘要： A process for forming a light valve device comprises forming a semiconductor single crystal film to form a composite substrate by polishing a semiconductor single crystal substrate after an electric insulating substrate has been bonded thereto; forming a group of pixel electrodes for defining a pixel region and a group of switch elements for selectively energizing the pixel electrodes by integrating a pixel array portion over the composite substrate; forming a liquid crystal aligning means for the pixel region; superposing an opposed substrate over the composite substrate with a gap therebetween; and filling the gap with liquid crystal material.

摘要翻译： 形成光阀装置的方法包括：形成半导体单晶膜，以在电绝缘基板已经结合之后通过抛光半导体单晶基板来形成复合基板; 形成用于限定像素区域的一组像素电极和一组开关元件，用于通过在复合衬底上积分像素阵列部分来选择性地激励像素电极; 形成用于像素区域的液晶对准装置; 在复合基板上叠置相对的基板，其间具有间隙; 并用液晶材料填充间隙。

公开(公告)号：US5585304A

公开(公告)日：1996-12-17

申请号：US293415

申请日：1994-08-02

申请人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

发明人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/30 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76251 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/148 ,  Y10S438/977

摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

摘要翻译： 半导体晶片由介于薄硅层和厚硅层之间的透明层构成。 硅岛由透明层上的薄硅层形成。 器件元件形成在硅岛中。 此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。 构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。 透明层由氮化硅膜或碳化硅膜构成。 或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。