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52 条记录 (耗时 0.021 秒)

    LED with a coupling-out structure
    32.
    发明授权
    LED with a coupling-out structure 失效

    公开(公告)号：US06661033B2

    公开(公告)日：2003-12-09

    申请号：US10331924

    申请日：2002-12-30

    申请人： Norbert Linder ,  Ralph Wirth ,  Heribert Zull

    发明人： Norbert Linder ,  Ralph Wirth ,  Heribert Zull

    IPC分类号： H01L3300

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20

    摘要： On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offset from one another. The output coupling areas are formed as flat truncated cones and can be rippled or zigzagged at the flanks, in order to increase the probability that the radiation produced strikes an outer interface of the output coupling layer more steeply than at a limiting angle of total reflection.

    Optoelectronic Semiconductor Chip
    34.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20100295073A1

    公开(公告)日：2010-11-25

    申请号：US12666557

    申请日：2008-06-23

    申请人： Stefan Grötsch ,  Norbert Linder

    发明人： Stefan Grötsch ,  Norbert Linder

    IPC分类号： H01L33/46

    CPC分类号： H01L33/46 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/00014

    摘要： An optoelectronic semiconductor chip (1) comprises a radiation passage area (3), a contact metallization (2a) applied to the radiation passage area (3), and a first reflective layer sequence (2b) applied to that surface of the contact metallization (2a) which is remote from the radiation passage area (3). An optoelectronic component comprising such a chip is also specified.

    摘要翻译： 光电子半导体芯片（1）包括辐射通道区域（3），施加到辐射通道区域（3）的接触金属化（2a）和应用于接触金属化表面的第一反射层序列（2b） 2a），其远离辐射通道区域（3）。 还规定了包括这种芯片的光电子部件。

    Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier
    36.
    发明授权
    Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier 有权
    具有扩散阻挡层的辐射发射光电子半导体芯片

    公开(公告)号：US07470934B2

    公开(公告)日：2008-12-30

    申请号：US11477408

    申请日：2006-06-28

    申请人： Norbert Linder

    发明人： Norbert Linder

    IPC分类号： H01L27/15

    CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/305 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3063 ,  H01S5/3072 ,  H01L2924/00

    摘要： In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a first undoped layer (5) and a second undoped layer (6), the second undoped layer adjoining the first undoped layer (5) and succeeding the first undoped layer (5) as seen from the active layer (3), the first undoped layer (5) and the second undoped layer (6) in each case contain aluminum, the aluminum proportion being greater in the first undoped layer (5) than in the second undoped layer (6). The layer sequence (8) advantageously acts as a diffusion barrier for the dopant of the p-doped layer.

    摘要翻译： 在包括有源层（3）至少一个p掺杂层（9）和包括多个未掺杂层（4,5,6,7）的层序列（8）的辐射发射光电半导体芯片中，其是 布置在所述有源层（3）和所述p掺杂层（9）之间并且包含至少第一未掺杂层（5）和第二未掺杂层（6），所述第二未掺杂层邻接所述第一未掺杂层（5）和 随后从活性层（3）看到的第一未掺杂层（5），第一未掺杂层（5）和第二未掺杂层（6）在每种情况下都含有铝，铝比例在第一未掺杂层（ 5）比在第二未掺杂层（6）中。 层序列（8）有利地用作p掺杂层的掺杂剂的扩散势垒。

    Electroluminescent body
    39.
    发明授权
    Electroluminescent body 有权
    电致发光体

    公开(公告)号：US07135711B2

    公开(公告)日：2006-11-14

    申请号：US10488487

    申请日：2002-08-30

    申请人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    发明人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    IPC分类号： H01L29/22 ,  H01L29/227

    CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/46

    摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).

    摘要翻译： 电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。 电致发光部件（1）具有基板（2）。 在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。 和每个辐射去耦元件（4）上的接触元件（9）。 尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度 对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过 辐射去耦元件（4）的侧面区域（12）。