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52 条记录 (耗时 0.025 秒)

    LED with a coupling-out structure
    1.
    发明授权
    LED with a coupling-out structure 失效

    公开(公告)号：US06661033B2

    公开(公告)日：2003-12-09

    申请号：US10331924

    申请日：2002-12-30

    申请人： Norbert Linder ,  Ralph Wirth ,  Heribert Zull

    发明人： Norbert Linder ,  Ralph Wirth ,  Heribert Zull

    IPC分类号： H01L3300

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20

    摘要： On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offset from one another. The output coupling areas are formed as flat truncated cones and can be rippled or zigzagged at the flanks, in order to increase the probability that the radiation produced strikes an outer interface of the output coupling layer more steeply than at a limiting angle of total reflection.

    Optoelectronic Semiconductor Chip
    3.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开
    光电半导体芯片

    公开(公告)号：US20110297982A1

    公开(公告)日：2011-12-08

    申请号：US13061514

    申请日：2009-07-23

    申请人： Norbert Linder ,  Ralph Wirth ,  Christopher Wiesmann ,  Ross Stanley ,  Romuald Houdre

    发明人： Norbert Linder ,  Ralph Wirth ,  Christopher Wiesmann ,  Ross Stanley ,  Romuald Houdre

    IPC分类号： H01L33/60

    CPC分类号： H01L33/22 ,  H01L33/405 ,  H01L33/46

    摘要： A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.

    摘要翻译： 规定了半导体芯片，其包括设置用于发射电磁辐射的有源层和在半导体芯片的主发射方向上设置在有源层下游的结构单元的二维排列。 结构单元布置在任意统计分布中。 这种结构单元的布置使得可以实现具有定向发射特性的半导体芯片。

    Radiation-emitting semi-conductor component
    5.
    发明授权
    Radiation-emitting semi-conductor component 有权
    辐射发射半导体元件

    公开(公告)号：US07629670B2

    公开(公告)日：2009-12-08

    申请号：US10561318

    申请日：2004-06-25

    申请人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

    发明人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

    IPC分类号： H01S5/323

    CPC分类号： H01L33/025 ,  H01L33/02 ,  H01S5/3086

    摘要： In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

    摘要翻译： 在具有包括n掺杂约束层，p掺杂约束层和设置在n掺杂约束层和p掺杂约束层之间的有源光子发射层的层结构的发射辐射的半导体部件中， 根据本发明提供了n掺杂约束层掺杂有用于产生高有源掺杂和尖锐掺杂分布的第一n掺杂剂（或两个相互不同的n掺杂剂），并且仅有源层掺杂 与第一掺杂剂不同的第二n-掺杂剂，用于改善有源层的层质量。

    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME
    6.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US20090029496A1

    公开(公告)日：2009-01-29

    申请号：US12240147

    申请日：2008-09-29

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01L21/02

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Optically Pumped Semiconductor Device
    7.
    发明申请
    Optically Pumped Semiconductor Device 有权
    光泵浦半导体器件

    公开(公告)号：US20080080582A1

    公开(公告)日：2008-04-03

    申请号：US11579196

    申请日：2005-04-11

    申请人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/183 ,  H01S5/026

    CPC分类号： H01S5/18305 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18388 ,  H01S5/32341

    摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

    摘要翻译： 一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源， 在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。 泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层 （2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场 垂直发射极层（3）被抑制。

    Semiconductor laser and optically pumped semiconductor device
    9.
    发明授权
    Semiconductor laser and optically pumped semiconductor device 有权
    半导体激光器和光泵浦半导体器件

    公开(公告)号：US07050471B2

    公开(公告)日：2006-05-23

    申请号：US10791055

    申请日：2004-03-01

    申请人： Peter Brick ,  Tony Albrecht ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Peter Brick ,  Tony Albrecht ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/00 ,  H01S3/04

    CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/101 ,  H01S5/105 ,  H01S5/141 ,  H01S5/18319 ,  H01S5/4056

    摘要： A semiconductor laser with a semiconductor body (1), which has a periodic arrangement of cutouts (2) or in which a period arrangement of semiconductor regions is formed, so that the radiation generated by the semiconductor laser is not capable of propagating within this periodic arrangement, the resonator (3) of the semiconductor laser being omitted from the periodic arrangement in the lateral direction. Furthermore, an optically pumped semiconductor device is disclosed with a vertical emitter (13) comprising a quantum well structure (7), which is pumped by means of a semiconductor laser of this type or into which the pump radiation of a pump radiation source is coupled by means of a corresponding waveguide (22).

    摘要翻译： 一种具有半导体本体（1）的半导体激光器，其具有切口（2）的周期性布置或其中形成半导体区域的周期布置，使得由半导体激光器产生的辐射不能在该周期性范围内传播 在横向上从周期性布置中省略了半导体激光器的谐振器（3）。 此外，公开了一种具有垂直发射器（13）的光学泵浦半导体器件，该垂直发射器（13）包括量子阱结构（7），该量子阱结构（7）借助于这种类型的半导体激光器泵浦，或者泵浦辐射源的泵浦辐射耦合到该半导体激光器 借助于相应的波导（22）。