公开(公告)号：US09859311B1

公开(公告)日：2018-01-02

申请号：US15362391

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.

公开(公告)号：US20170347047A1

公开(公告)日：2017-11-30

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

CPC classification number: H04N5/374 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/23229 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452 ,  H04N5/37457

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US20160372507A1

公开(公告)日：2016-12-22

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract translation: 图像传感器包括布置在半导体材料中的光电二极管。 每个光电二极管的尺寸相同，并且在具有相同半导体加工条件的半导体材料中制造。 光电二极管被组织成包括第一光电二极管和第二光电二极管的虚拟大小组。 微透镜设置在半导体材料上，每个微透镜设置在相应的光电二极管上。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 掩模设置在第一微透镜和第一光电二极管之间。 掩模包括开口，通过第一微透镜的入射光的第一部分通过该开口被引导到第一光电二极管。 通过第一微透镜的入射光的第二部分被掩模阻挡到达第一光电二极管。 在第二微透镜和第二光电二极管之间没有掩模。

公开(公告)号：US09331115B2

公开(公告)日：2016-05-03

申请号：US14222833

申请日：2014-03-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai ,  Dajiang Yang

IPC: H04N9/73 ,  H04N9/04 ,  H04N9/87 ,  H01L27/146 ,  G02B13/00

CPC classification number: H01L27/14627 ,  G02B13/0015 ,  H01L27/14643

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。

公开(公告)号：US09305949B2

公开(公告)日：2016-04-05

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。

公开(公告)号：US09105767B2

公开(公告)日：2015-08-11

申请号：US14331652

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L31/06 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 第一极性电荷层设置在多个钝化层中的第一个和设置在光电二极管区域上的多个钝化层中的第二钝化层之间。

公开(公告)号：US08933494B1

公开(公告)日：2015-01-13

申请号：US14038336

申请日：2013-09-26

Applicant: Omnivision Technologies, Inc.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Zhenhong Fu

IPC: H01L27/148

CPC classification number: H01L27/14656 ,  H01L27/14614

Abstract: A pixel cell includes a storage transistor including a deep implant storage region having a first polarity is implanted in a semiconductor substrate to store image charge accumulated by a photodiode. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a readout node. A first shallow implant region having the first polarity is implanted in the semiconductor substrate under a first spacer region between a transfer gate of the transfer transistor and a storage gate of the storage transistor. A second shallow implant region having the first polarity is implanted in the semiconductor substrate under a second spacer region between the storage gate and the output gate.

Abstract translation: 像素单元包括存储晶体管，其包括具有第一极性的深注入存储区域注入到半导体衬底中以存储由光电二极管累积的图像电荷。 传输晶体管耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 具有第一极性的第一浅注入区域在转移晶体管的转移栅极和存储晶体管的存储栅极之间的第一间隔区域内注入到半导体衬底中。 具有第一极性的第二浅注入区域在存储栅极和输出栅极之间的第二间隔区域内注入到半导体衬底中。

公开(公告)号：US20140246561A1

公开(公告)日：2014-09-04

申请号：US13784351

申请日：2013-03-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dajiang Yang ,  Jin Li ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H01L27/14812 ,  H01L21/266 ,  H01L27/14607 ,  H01L27/14689 ,  H04N5/35563

Abstract: A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode.

Abstract translation: 高动态范围图像传感器像素包括短集成光电二极管和设置在半导体材料中的长积分光电二极管。 长积分光电二极管的曝光面积远大于短积分光电二极管的曝光面积。 短积分光电二极管的曝光区域具有来自第一掺杂注入的第一掺杂浓度。 长积分光电二极管的曝光区域包括具有来自第一掺杂注入的第一掺杂浓度的至少一个注入部分。 长积分光电二极管的曝光区域还包括从第一掺杂注入光掩模的至少一个非注入部分，使得长积分光电二极管的曝光区域的注入和未注入部分的组合掺杂浓度较小 比第一掺杂浓度的曝光区域短的集成光电二极管。

公开(公告)号：US20140117485A1

公开(公告)日：2014-05-01

申请号：US13660774

申请日：2012-10-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L31/0216

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

公开(公告)号：US10582178B2

公开(公告)日：2020-03-03

申请号：US15341374

申请日：2016-11-02

Applicant: OmniVision Technologies, Inc.

Inventor： Zheng Yang ,  Eiichi Funatsu ,  Sohei Manabe ,  Keiji Mabuchi ,  Dajiang Yang ,  Duli Mao ,  Bowei Zhang

IPC: H04N13/00 ,  H04N13/106 ,  H01L27/146 ,  H04N5/3745 ,  H04N13/271 ,  G06T7/586 ,  G06T7/593 ,  G01B11/24 ,  H04N13/254 ,  G06T5/00 ,  G06T5/50 ,  H04N5/353 ,  H04N5/378

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.