公开(公告)号：US20050194605A1

公开(公告)日：2005-09-08

申请号：US10794935

申请日：2004-03-05

申请人： Bryan Shelton ,  Sebastien Libon ,  Hari Venugopalan ,  Ivan Eliashevich ,  Stanton Weaver ,  Chen-Lun Chen ,  Thomas Soules ,  Steven LeBoeuf ,  Stephen Arthur

发明人： Bryan Shelton ,  Sebastien Libon ,  Hari Venugopalan ,  Ivan Eliashevich ,  Stanton Weaver ,  Chen-Lun Chen ,  Thomas Soules ,  Steven LeBoeuf ,  Stephen Arthur

IPC分类号： H01L27/15 ,  H01L33/38 ,  H01L33/62

CPC分类号： H01L33/62 ,  H01L24/81 ,  H01L33/38 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3003 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83815 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

摘要翻译： 发光二极管（10）具有背面和前侧，具有至少一个n型电极（14）和设置在其上的至少一个p型电极（12），其限定最小电极间隔（d < ）。 接合焊盘层（50）包括至少一个n型接合焊盘（64）和至少一个限定最小接合焊盘间隔（p>焊盘）的p型接合焊盘（62） 大于最小电极分离（d _{电极）。 插入在发光二极管（10）的前侧和接合焊盘层（50）之间的至少一个扇形层（30）包括穿过电介质层的通孔（34,54）的多个导电路径 以在所述至少一个n型电极（14）和所述至少一个n型焊盘（64）之间以及所述至少一个p型电极（12）和所述至少一个p型电极（12）之间提供电连通 一个p型接合焊盘（62）。}

公开(公告)号：US06746889B1

公开(公告)日：2004-06-08

申请号：US10108292

申请日：2002-03-27

申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Bob Karlicek ,  Stanton Weaver

发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Bob Karlicek ,  Stanton Weaver

IPC分类号： H01L2000

CPC分类号： H01L25/0753 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/0217 ,  H01L2924/00

摘要： An improved method for producing optoelectronic devices such as light emitting diodes or laser diodes is provided. Light emitting diodes or laser diodes are provided with improved light extraction. Epitaxial layers including a light emitting p-n junction are deposited on a substrate, and separations are cut through the epitaxial layers to provide a structure including a plurality of individual dies on the substrate. The structure is mounted on a submount and the substrate is removed. An index matching material is then attached to improve light extraction from the optoelectronic device.

摘要翻译： 提供了一种用于制造诸如发光二极管或激光二极管的光电子器件的改进方法。 发光二极管或激光二极管具有改进的光提取。 包含发光p-n结的外延层沉积在衬底上，并且通过外延层切割间隔以提供包括在衬底上的多个单个管芯的结构。 该结构安装在底座上，并且移除基板。 然后附加折射率匹配材料以改善从光电子器件的光提取。