公开(公告)号：US09136422B1

公开(公告)日：2015-09-15

申请号：US13354175

申请日：2012-01-19

Applicant: Gregg Higashi ,  Brendan M. Kayes ,  Frank Reinhardt ,  Sylvia Spruytte

Inventor： Gregg Higashi ,  Brendan M. Kayes ,  Frank Reinhardt ,  Sylvia Spruytte

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/1892 ,  H01L33/0062 ,  H01L2933/0091 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

Abstract: Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Abstract translation: 实施例通常涉及光电子器件，更具体地涉及光电器件中的纹理层。 在一个实施例中，用于在光电子器件中提供纹理化层的方法包括沉积第一材料的第一层并在第一层上沉积第二材料的岛层。 沉积岛层包括形成第二材料的一个或多个岛以提供岛层的至少一个纹理表面，其中织构表面可操作以引起光的散射。

公开(公告)号：US20130098289A1

公开(公告)日：2013-04-25

申请号：US13444645

申请日：2012-04-11

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC: C30B25/12 ,  C30B25/10 ,  C30B25/18 ,  C30B25/14 ,  C30B25/08 ,  C30B25/02

CPC classification number: C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

公开(公告)号：US20130052346A1

公开(公告)日：2013-02-28

申请号：US13222840

申请日：2011-08-31

Applicant: Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

Inventor： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45519

Abstract: A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

Abstract translation: 化学气相沉积反应器具有由气流虚拟壁限定的一个或多个沉积区，在具有封闭壁的壳体内。 每个沉积区支持化学气相沉积到基底上。 由气体流形成的虚拟壁横向包围沉积区，包括来自沉积区内的反应气体的第一气流和非反应气体从沉积区的横向外侧的区域的第二气流。 第一和第二气体流量相互压力平衡以形成虚拟壁。 虚拟壁通过在每个沉积区的边界处合并气流而形成。 壳体具有排气阀，以防止压力差或压力增加，这将破坏虚拟墙体的稳定性。 在沉积区域和壳体的封闭壁之间或在气流虚拟壁外部的壳体的内部区域之间的交叉污染减少。

公开(公告)号：US20120106935A1

公开(公告)日：2012-05-03

申请号：US13257273

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

IPC: F27D11/12

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD). In one embodiment, a heating lamp assembly for a CVD reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a plurality of lamps extending from a first lamp holder to a second lamp holder. The lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. In another embodiment, the method includes exposing a lower surface of a wafer carrier to energy emitted from the heating lamp assembly and heating the wafer carrier to a predetermined temperature.

Abstract translation: 本发明的实施方案一般涉及用于化学气相沉积（CVD）的装置和方法。 在一个实施例中，提供了一种用于CVD反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含从第一灯座延伸到第二灯座的多个灯的灯壳体。 灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 在另一个实施例中，该方法包括将晶片载体的下表面暴露于从加热灯组件发射的能量并将晶片载体加热至预定温度。

公开(公告)号：US20120067286A1

公开(公告)日：2012-03-22

申请号：US13257264

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/46

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且容纳可用于加热设置在晶片载体上的晶片的多个灯。

公开(公告)号：US20110308463A1

公开(公告)日：2011-12-22

申请号：US13221780

申请日：2011-08-30

Applicant: Gang He ,  Gregg Higashi

Inventor： Gang He ,  Gregg Higashi

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/458 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/54 ,  C30B25/08 ,  C30B25/14 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/67784

Abstract: A chemical vapor deposition reactor and system has a housing, a substrate transport apparatus and a plurality of fixed processing zones. The processing zones include one or more chemical vapor deposition zones, each having an independent reactant gas supply. Each chemical vapor deposition zone may have a respective showerhead. The substrate transport apparatus moves the substrate along a path from the entrance of the housing to the exit of the housing, passing sequentially through each of the processing zones. A respective isolation zone between neighboring processing zones functions to prevent mixing of gases between the processing zones. The isolation zone has a gas dual flow path directing gas flows in opposing directions. The isolation zone may include a gas inflow isolator coupled via a gas dual flow path to respective exhaust ports of respective process zones. The isolation zone may include a respective isolation curtain having a split gas flow.

Abstract translation: 化学气相沉积反应器和系统具有壳体，基底输送装置和多个固定处理区域。 处理区包括一个或多个化学气相沉积区，每一个具有独立的反应气体供应。 每个化学气相沉积区可以具有相应的喷头。 基板输送装置沿着从壳体的入口到壳体的出口的路径移动基板，顺序地通过每个处理区域。 相邻处理区之间的相应隔离区起到防止处理区之间气体混合的作用。 隔离区具有气体双向流动路径，其指导气体沿相反的方向流动。 隔离区可以包括通过气体双流路连接到相应处理区的相应排气口的气体流入隔离器。 隔离区可以包括具有分流气流的相应隔离帘。

公开(公告)号：US08008174B2

公开(公告)日：2011-08-30

申请号：US12577641

申请日：2009-10-12

Applicant: Gang He ,  Gregg Higashi

Inventor： Gang He ,  Gregg Higashi

IPC: H01L21/20 ,  H01L21/36 ,  C23C16/00

CPC classification number: C23C16/54 ,  C23C16/45519 ,  C23C16/458 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/6776 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.

Abstract translation: 本发明的实施方案一般涉及在连续化学气相沉积（CVD）工艺期间形成多层材料的方法。 在一个实施例中，提供了在连续CVD工艺期间形成多层材料的方法，其包括通过具有至少四个沉积区的沉积系统连续前进多个晶片。 在每个晶片上沉积多层材料，使得在每个沉积区域沉积一层。 该方法提供每个晶片通过每个沉积区域，同时从第一沉积区沉积第一层，从第二沉积区沉积第二层，从第三沉积区沉积第三层，以及从第四沉积区沉积第四层。 本文描述的实施例可以用于在晶片或衬底上形成各种材料，特别是用于在GaAs晶片上形成III / V族材料。

公开(公告)号：US20100209626A1

公开(公告)日：2010-08-19

申请号：US12725318

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/46

CPC classification number: C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.

Abstract translation: 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座 达到预定温度。 加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器 到灯座和灯下方。 多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

公开(公告)号：US20100209620A1

公开(公告)日：2010-08-19

申请号：US12725296

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/46

CPC classification number: C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for processing a wafer within a vapor deposition reactor is provided which includes heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.

Abstract translation: 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，提供了一种用于在气相沉积反应器内处理晶片的方法，其包括通过将晶片载体的下表面暴露于从灯组件发射的辐射并使液体流过而使加热至少一个设置在晶片载体上的晶片 通过整个反应器延伸的通道，以将反应器盖组件保持在预定的温度，例如在约275℃至约325℃的范围内。该方法还包括至少通过晶片载体轨道横穿晶片载体 包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室，以及通过排气组件从反应器中除去气体。

公开(公告)号：US20100126570A1

公开(公告)日：2010-05-27

申请号：US12605129

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。