公开(公告)号：US09158679B2

公开(公告)日：2015-10-13

申请号：US14028172

申请日：2013-09-16

Applicant: RAMBUS INC.

Inventor： Kambiz Kaviani ,  Amir Amirkhany ,  Dinesh Patil ,  Mohammad Hekmat

IPC: G06F12/00 ,  G06F12/02 ,  G11C5/04 ,  G11C7/10

CPC classification number: G06F3/0619 ,  G06F3/0656 ,  G06F3/0683 ,  G06F12/0246 ,  G06F12/0802 ,  G06F2212/20 ,  G11C5/04 ,  G11C7/1066 ,  G11C7/1093

Abstract: A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface.

Abstract translation: 描述了具有基于选通脉冲的主界面和在存储器模块上使用的无频闪次要接口的数据缓冲器。 一个存储器模块包括地址缓冲器，数据缓冲器和多个动态随机存取存储器（DRAM）器件。 地址缓冲器通过无闪光次要接口向数据缓冲器和DRAM器件提供定时参考，用于数据缓冲器和DRAM器件之间的一个或多个事务。

公开(公告)号：US08937994B2

公开(公告)日：2015-01-20

申请号：US13915290

申请日：2013-06-11

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Kambiz Kaviani ,  Aliazam Abbasfar

IPC: H03H7/30 ,  H03K5/24

CPC classification number: H04L25/03949 ,  H03K5/24

Abstract: A partial response decision feedback equalizer (PrDFE) includes a receiver including at least first and second comparators operative to compare an input signal representing a sequence of symbols against respective thresholds and to respectively generate first and second receiver outputs. A first selection stage is provided to select (a) between the first comparator output and a first resolved symbol according to a first timing signal, and (b) between the second comparator output and the first resolved symbol according to the first timing signal, to produce respective first and second selection outputs. A second selection stage selects between the first and second selection outputs according to a selection signal. The selection signal is dependent on a prior resolved symbol that precedes the first resolved symbol in the sequence.

Abstract translation: 部分响应判决反馈均衡器（PrDFE）包括至少包括第一和第二比较器的接收器，该第一和第二比较器可操作以将表示符号序列的输入信号与相应阈值进行比较，并且分别产生第一和第二接收器输出。 提供第一选择级，以根据第一定时信号在第一比较器输出和第一解析符号之间选择（a），以及（b）根据第一定时信号在第二比较器输出和第一解析符号之间选择 产生相应的第一和第二选择输出。 第二选择阶段根据选择信号在第一和第二选择输出之间进行选择。 选择信号取决于序列中第一个已解析符号之前的先前解析符号。

公开(公告)号：US20140104935A1

公开(公告)日：2014-04-17

申请号：US14023970

申请日：2013-09-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G11C7/10 ,  G11C11/419 ,  G11C8/18

CPC classification number: G06F13/1673 ,  G06F13/4068 ,  G11C5/02 ,  G11C7/10 ,  G11C7/1012 ,  G11C7/1021 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1072 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/222 ,  G11C8/18 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/419 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract translation: 半导体存储器系统包括第一半导体存储器管芯和第二半导体存储器管芯。 第一半导体存储器管芯包括主数据接口，用于在写操作期间接收输入数据流，并将输入数据流反序列化为第一多个数据流，并且还包括耦合到主数据接口的辅数据接口， 发送第一多个数据流。 第二半导体存储器管芯包括耦合到第一半导体存储器管芯的次级数据接口的次级数据接口，以接收第一多个数据流。

公开(公告)号：US20250103531A1

公开(公告)日：2025-03-27

申请号：US18919179

申请日：2024-10-17

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F12/00 ,  G06F13/00 ,  G06F13/16

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

公开(公告)号：US11755521B2

公开(公告)日：2023-09-12

申请号：US17809688

申请日：2022-06-29

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F13/16 ,  G06F12/00 ,  G06F13/00

CPC classification number: G06F13/4022 ,  G06F12/00 ,  G06F13/00 ,  G06F13/1673 ,  G06F13/1694

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

公开(公告)号：US20230120661A1

公开(公告)日：2023-04-20

申请号：US17965684

申请日：2022-10-13

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G06F13/16 ,  G11C7/10 ,  G11C8/18 ,  G11C11/419 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G06F13/40

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

公开(公告)号：US11340686B2

公开(公告)日：2022-05-24

申请号：US16947973

申请日：2020-08-26

Applicant: Rambus Inc.

Inventor： Dinesh Patil ,  Amir Amirkhany ,  Farrukh Aquil ,  Kambiz Kaviani ,  Frederick A. Ware

IPC: G06F1/324 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4093 ,  G11C11/4076 ,  G06F1/3234 ,  G06F1/3287 ,  G06F5/06 ,  G11C7/04 ,  H03L7/081

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

公开(公告)号：US20200050561A1

公开(公告)日：2020-02-13

申请号：US16546694

申请日：2019-08-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G06F13/16 ,  G06F13/40 ,  G11C7/10 ,  G11C5/02 ,  G11C11/4096 ,  G11C11/4093 ,  G11C11/4076 ,  G11C7/22 ,  G11C11/419 ,  G11C8/18

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

公开(公告)号：US09747230B2

公开(公告)日：2017-08-29

申请号：US14408955

申请日：2013-10-14

Applicant: Rambus Inc.

Inventor： Minghui Han ,  Amir Amirkhany ,  Ravindranath Kollipara ,  Ralf Michael Schmitt

IPC: G06F13/36 ,  G06F13/28 ,  G06F3/06 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10

CPC classification number: G06F13/28 ,  G06F3/0611 ,  G06F3/0635 ,  G06F3/0683 ,  G11C5/04 ,  G11C5/063 ,  G11C7/1084

Abstract: A memory system includes a two memory modules and a memory controller. The memory modules each include at least a first memory package corresponding to a first number of memory ranks (e.g. one memory rank) and a second memory package corresponding to a second number of memory ranks (e.g. two memory ranks) that is greater than the first number of memory ranks. For each module, the memory packages may be asymmetrically staggered such that one memory package is further from the memory controller than the other memory package. The memory controller is coupled to the memory packages of both modules via a common data line and generates control information for controlling the on-die termination (ODT) of the memory packages.

公开(公告)号：US09515856B2

公开(公告)日：2016-12-06

申请号：US14720518

申请日：2015-05-22

Applicant: Rambus Inc.

Inventor： Kambiz Kaviani ,  Amir Amirkhany ,  Jason Chia-Jen Wei ,  Aliazam Abbasfar

IPC: H04L25/03 ,  H04B1/12

CPC classification number: H04L25/03057 ,  H04B1/123 ,  H04L25/03063 ,  H04L25/03885

Abstract: A decision feedback equalizer is calibrated to compensate for estimated inter-symbol interference in a received signal and offsets of sampling devices. The decision feedback equalizer is configured so that an output signal of a sampling circuit represents a comparison between an input signal and a reference of the sampling circuit under calibration. An input signal is received over a communication channel that includes a predetermined pattern. The predetermined pattern is compared to the output signal to determine an adjusted reference for configuring the sampling circuit that accounts for both offset and inter-symbol interference effects.