公开(公告)号：US20220350763A1

公开(公告)日：2022-11-03

申请号：US17748762

申请日：2022-05-19

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G11C5/04 ,  G11C7/10 ,  G06F13/16

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US11385959B2

公开(公告)日：2022-07-12

申请号：US16872929

申请日：2020-05-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern

IPC: G06F11/00 ,  G06F11/10 ,  G06F11/16 ,  G11C29/42 ,  G11C29/44 ,  G11C7/10 ,  G11C29/52 ,  G11C29/00 ,  H03M13/15 ,  G06F11/20

Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

公开(公告)号：US20200234756A1

公开(公告)日：2020-07-23

申请号：US16842368

申请日：2020-04-07

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G11C11/4093 ,  G11C11/4091 ,  G06F13/40 ,  H01L25/10 ,  G11C7/22 ,  G11C5/06 ,  G11C7/10 ,  G11C11/4076 ,  G11C11/4096 ,  G11C5/04 ,  H01L25/065 ,  G11C5/02 ,  G11C11/4094 ,  G06F13/16

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US10672458B1

公开(公告)日：2020-06-02

申请号：US16692043

申请日：2019-11-22

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G11C7/00 ,  G11C11/4093 ,  H01L25/10 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C7/22 ,  G06F13/40 ,  G06F13/16 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US10592120B2

公开(公告)日：2020-03-17

申请号：US15529970

申请日：2015-12-18

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern

IPC: G06F3/06 ,  G11C5/04 ,  G11C7/10 ,  G06F12/06

Abstract: Memory modules, systems, memory controllers and associated methods are disclosed. In one embodiment, a memory module includes a module substrate having first and second memory devices. Buffer circuitry disposed on the substrate couples to the first and second memory devices via respective first and second secondary interfaces. The buffer circuitry includes a primary signaling interface for coupling to a group of signaling links associated with a memory controller. The primary signaling interface operates at a primary signaling rate and the first and second secondary data interfaces operate at a secondary signaling rate. During a first mode of operation, the primary interface signaling rate is at least twice the secondary signaling rate. A first time interval associated with a transfer of first column data via the first secondary interface temporally overlaps a second time interval involving second column data transferred via the second secondary interface.

公开(公告)号：US10381067B2

公开(公告)日：2019-08-13

申请号：US15832468

申请日：2017-12-05

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G11C7/10 ,  G11C11/4093 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  H01L25/065 ,  H01L25/10 ,  G06F13/40 ,  G06F13/16 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  G11C7/22 ,  H01L25/18 ,  H01L23/00

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US20180145670A1

公开(公告)日：2018-05-24

申请号：US15824892

申请日：2017-11-28

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  Brian S. Leibowitz ,  Jared Zerbe

IPC: H03K5/13 ,  G11C29/02 ,  G11C7/22 ,  G11C7/10 ,  G06F13/16 ,  G11C7/04 ,  G06F13/42 ,  G06F13/00

Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.

公开(公告)号：US20170351627A1

公开(公告)日：2017-12-07

申请号：US15533630

申请日：2015-10-28

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G06F13/16

CPC classification number: G06F13/287 ,  G06F13/16 ,  G06F2213/28 ,  G11C5/04 ,  G11C7/10 ,  G11C7/1045

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US20170186478A1

公开(公告)日：2017-06-29

申请号：US15389409

申请日：2016-12-22

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G11C11/4093 ,  G11C11/4096 ,  G11C11/4091 ,  G11C11/4094 ,  G06F13/40 ,  G11C11/4076

CPC classification number: G11C11/4093 ,  G06F13/16 ,  G06F13/4027 ,  G06F13/4068 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C7/1006 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US20170052845A1

公开(公告)日：2017-02-23

申请号：US15250677

申请日：2016-08-29

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern

IPC: G06F11/10 ,  G11C29/52 ,  G06F11/16 ,  G11C7/10 ,  H03M13/15 ,  G11C29/44 ,  G11C29/00

CPC classification number: G06F11/1044 ,  G06F11/1048 ,  G06F11/1068 ,  G06F11/1666 ,  G06F11/20 ,  G11C7/10 ,  G11C29/42 ,  G11C29/4401 ,  G11C29/52 ,  G11C29/70 ,  G11C29/765 ,  G11C2029/4402 ,  H03M13/1575

Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

Abstract translation: 公开了一种存储器模块，其包括衬底，输出读取数据的存储器件和缓冲器。 缓冲器具有用于将读取的数据传送到存储器控制器的主界面和耦合到存储器设备的辅助接口以接收读取的数据。 缓冲器包括用于识别所接收的读取数据中的错误并识别与该错误相关联的存储器件中的存储单元位置的错误逻辑。 修复逻辑将替换存储元素映射为与错误相关联的存储单元位置的替代存储元素。