公开(公告)号：US20140326991A1

公开(公告)日：2014-11-06

申请号：US14258466

申请日：2014-04-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke MATSUBAYASHI ,  Toshimitsu OBONAI ,  Noritaka ISHIHARA ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A semiconductor device in which variation in electrical characteristics between transistors is reduced is provided. A transistor where a channel is formed in an oxide semiconductor layer is included, and a concentration of carriers contained in a region where the channel is formed in the oxide semiconductor layer is lower than or equal to 1×1015/cm3, preferably lower than or equal to 1×1013/cm3, more preferably lower than or equal to 1×1011/cm3, whereby an energy barrier height which electrons flowing between a source and a drain should go over converges at a constant value. In this manner, a semiconductor device in which variation in the electrical characteristics between the transistors is inhibited is provided.

Abstract translation: 提供一种减小晶体管之间的电特性变化的半导体器件。 包括在氧化物半导体层中形成沟道的晶体管，并且在氧化物半导体层中形成沟道的区域中所含的载流子浓度低于或等于1×1015 / cm3，优选低于或等于 等于1×10 13 / cm 3，更优选低于或等于1×10 11 / cm 3，由此在源极和漏极之间流动的电子的能量势垒高度会以恒定值收敛。 以这种方式，提供了其中抑制晶体管之间的电特性的变化的半导体器件。

公开(公告)号：US20250107153A1

公开(公告)日：2025-03-27

申请号：US18972210

申请日：2024-12-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/49 ,  H10K59/121

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with high reliability is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are stacked in this order over the first insulating layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US20210167212A1

公开(公告)日：2021-06-03

申请号：US17262793

申请日：2019-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Yasutaka NAKAZAWA ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.

公开(公告)号：US20200321280A1

公开(公告)日：2020-10-08

申请号：US16957159

申请日：2018-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Toshimitsu OBONAI ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L23/532 ,  H01L21/265 ,  H01L21/02 ,  H01L21/263

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20200035711A1

公开(公告)日：2020-01-30

申请号：US16594481

申请日：2019-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20170186843A1

公开(公告)日：2017-06-29

申请号：US15391186

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takashi HAMOCHI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  C04B35/453 ,  C04B35/622 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US20170170325A1

公开(公告)日：2017-06-15

申请号：US15372554

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L21/465 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/413 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

Abstract: An oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with a film density higher than or equal to 6.3 g/cm3 and lower than 6.5 g/cm3. Alternatively, the oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with etching at an etching rate higher than or equal to 10 nm/min and lower than or equal to 45 nm/min when a phosphoric acid aqueous solution obtained by diluting 85 vol % phosphoric acid with water 100 times is used for etching.

公开(公告)号：US20160027924A1

公开(公告)日：2016-01-28

申请号：US14875101

申请日：2015-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Hiroshi KANEMURA ,  Yasuharu HOSAKA ,  Shuhei YOKOYAMA ,  Toshimitsu OBONAI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  G01R31/2656 ,  G09G3/006 ,  G09G3/3225 ,  G09G3/3648 ,  H01L27/14678 ,  H01L27/14692 ,  H01L29/22

Abstract: A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

Abstract translation: 提供了具有低密度陷阱状态的半导体层。 提供具有稳定电特性的晶体管。 提供具有高场效应迁移率的晶体管。 提供包括晶体管的半导体器件。 提供了一种用于评估半导体层的方法。 提供了一种用于评估晶体管的方法。 提供了一种用于评估半导体器件的方法。 例如，提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层，在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管，或包括晶体管的半导体器件 晶体管。

公开(公告)号：US20150102341A1

公开(公告)日：2015-04-16

申请号：US14505004

申请日：2014-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

Abstract translation: 为了抑制电特性的改变，并提高使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的栅电极，与栅电极重叠的氧化物半导体膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜的表面接触的栅极绝缘膜， 与氧化物半导体膜的表面的相对表面接触的保护膜和与氧化物半导体膜接触的一对电极。 在栅极绝缘膜或保护膜中，通过热处理释放的质荷比为m / z为17的气体的量比通过热处理释放的氮氧化物的量大。

公开(公告)号：US20140374745A1

公开(公告)日：2014-12-25

申请号：US14303629

申请日：2014-06-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hironobu TAKAHASHI ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masashi TSUBUKU

IPC: H01L27/146 ,  H01L29/786

CPC classification number: H01L27/14663 ,  H01L27/14616 ,  H01L27/14625 ,  H01L27/14692 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869 ,  H04N5/3745

Abstract: An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm.

Abstract translation: 提供了对X射线等径向射线照射高度稳定的成像装置，能够抑制电特性的降低。 成像装置拍摄具有诸如X射线的径向射线的图像，并且包括以矩阵布置的像素电路和与像素电路重叠的闪烁体。 像素电路各自包括非常小的截止电流的开关晶体管和被配置为将径向射线转换成电荷的光接收元件。 开关晶体管的栅极绝缘膜具有包括厚度为100nm至400nm的氮化硅膜和厚度为5nm至20nm的氧化硅膜或氮氧化硅膜的叠层结构。