公开(公告)号：US11711065B2

公开(公告)日：2023-07-25

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145 ,  H03H9/02 ,  H03H3/02 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/085

CPC classification number: H03H9/02834 ,  A61B5/1459 ,  A61B5/14546 ,  A61B5/685 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/02574 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/6489 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  A61B2562/0204 ,  H03H2003/0407 ,  H10N30/085

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US11088016B2

公开(公告)日：2021-08-10

申请号：US16685938

申请日：2019-11-15

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Chrystelle Lagahe Blanchard

IPC: H01L21/762 ,  H01L27/146 ,  H01L23/544

Abstract: The disclosure relates to a process for locating devices, the process comprising the following steps: a) providing a carrier substrate comprising: a device layer; and alignment marks; b) providing a donor substrate; c) forming a weak zone in the donor substrate, the weak zone delimiting a useful layer; d) assembling the donor substrate and the carrier substrate; and e) fracturing the donor substrate in the weak zone so as to transfer the useful layer to the device layer; wherein the alignment marks are placed in cavities formed in the device layer, the cavities having an aperture flush with the free surface of the device layer.

公开(公告)号：US10924081B2

公开(公告)日：2021-02-16

申请号：US16829604

申请日：2020-03-25

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L41/312 ,  H01L41/047 ,  H01L27/20 ,  H01L41/335

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US10910250B2

公开(公告)日：2021-02-02

申请号：US15170532

申请日：2016-06-01

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US10510531B2

公开(公告)日：2019-12-17

申请号：US15803447

申请日：2017-11-03

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Isabelle Bertrand ,  Luciana Capello ,  Marcel Broekaart

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/322 ,  H01L21/324 ,  C30B29/06 ,  H01L21/762 ,  H01L27/12

Abstract: A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.

公开(公告)号：US20190007024A1

公开(公告)日：2019-01-03

申请号：US16064419

申请日：2016-12-21

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L27/20 ,  H01L41/047

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20150279830A1

公开(公告)日：2015-10-01

申请号：US14722794

申请日：2015-05-27

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu

IPC: H01L25/00

CPC classification number: H01L25/50 ,  B32B38/1858 ,  B32B2309/64 ,  B32B2309/65 ,  B32B2309/68 ,  H01L21/67092 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

Abstract: The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module.

Abstract translation: 本发明涉及一种用于制造半导体器件的装置，其中所述装置包括具有真空室的接合模块，以在低于大气压的压力下提供晶片的接合; 以及负载锁模块，其连接到所述接合模块并且被配置为用于晶片转移到所述接合模块。 负载锁模块还连接到第一真空泵装置，其被配置成将负载锁模块中的压力降低到低于大气压。 接合和负载锁定模块保持在低于大气压力的压力下，同时晶片从负载锁定模块传输到接合模块中。

公开(公告)号：US20150179603A1

公开(公告)日：2015-06-25

申请号：US14411741

申请日：2013-06-05

Applicant: Soitec

Inventor： Ionut Radu ,  Marcel Broekaart ,  Arnaud Castex ,  Gweltaz Gaudin ,  Gregory Riou

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/306

CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L21/30604 ,  H01L21/30625 ,  H01L22/12 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/29124 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83895 ,  H01L2924/01014 ,  H01L2924/0504 ,  H01L2924/10253 ,  H01L2924/201 ,  Y10T428/12493 ,  Y10T428/12639 ,  Y10T428/12646 ,  Y10T428/12653 ,  Y10T428/12674

Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in μm) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Abstract translation: 一种制造复合结构的方法，包括至少一个第一晶片与第二晶片的直接结合，并且包括启动键合波的传播的步骤，其中在所述第一和第二晶片传播之后的所述第一和第二晶片之间的结合界面 波具有小于或等于0.7J / m 2的结合能。 启动粘合波传播的步骤是在以下一个或多个条件下进行的：将晶片放置在小于20毫巴的压力的环境中和/或施加到两个晶片之一的机械压力 在0.1MPa和33.3MPa之间。 该方法还包括在开始粘合波的传播的步骤之后，确定在两个晶片的接合期间引起的应力水平的步骤，根据使用第二晶片计算出的应力参数Ct来确定应力水平 公式Ct = Rc / Ep，其中：Rc对应于两晶片组件的曲率半径（km），Ep对应于两晶片组件的厚度（μm）。 该方法还包括当确定的应力Ct大于或等于0.07时验证接合的步骤。

公开(公告)号：US08871611B2

公开(公告)日：2014-10-28

申请号：US14067453

申请日：2013-10-30

Applicant: Soitec

Inventor： Marcel Broekaart

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L27/146 ,  H01L27/14 ,  H01L21/67 ,  H01L21/20 ,  H01L23/544 ,  H01L23/00

CPC classification number: H01L21/76251 ,  H01L21/2003 ,  H01L21/67092 ,  H01L23/544 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L27/14 ,  H01L27/14601 ,  H01L27/14687 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2224/8313 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/83

Abstract: A method for bonding first and second wafers by molecular adhesion. The method includes placing the wafers in an environment having a first pressure (P1) greater than a predetermined threshold pressure above which initiation of bonding wave propagation is prevented, bringing the first wafer and the second wafer into alignment and contact, and spontaneously initiating the propagation of a bonding wave between the wafers after they are in contact solely by reducing the pressure within the environment to a second pressure (P2) below the threshold pressure.

Abstract translation: 一种通过分子粘附将第一和第二晶片接合的方法。 该方法包括将晶片放置在具有大于预定阈值压力的第一压力（P1）的环境中，在该环境下，防止接合波传播的起始，使第一晶片和第二晶片对准和接触，并且自发地启动传播 只有通过将环境中的压力降低到低于阈值压力的第二压力（P2），晶片之间的结合波在它们接触之后。

公开(公告)号：US12230533B2

公开(公告)日：2025-02-18

申请号：US17435017

申请日：2020-03-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Arnaud Castex

IPC: H01L21/762

Abstract: A method for fabricating a semiconductor-on-insulator structure involves providing a donor substrate comprising a weakened zone delimiting a layer to be transferred, providing a receiver substrate, and bonding the donor substrate to the receiver substrate. The layer to be transferred is located on the bonding-interface side. A bonding wave is initiated at a first region on the periphery of the interface, and the wave is propagated toward a second region on the periphery of the interface opposite the first region. The difference in speed of propagation of the bonding wave between a central portion of the interface and a peripheral portion of the interface is controlled such that the speed of propagation of the bonding wave is lower in the central portion than in the peripheral portion. The donor substrate is detached along the weakened zone to transfer the layer to be transferred to the receiver substrate.