公开(公告)号：US20060171798A1

公开(公告)日：2006-08-03

申请号：US10904040

申请日：2004-10-20

申请人： Shigeyuki Yamamoto ,  Warren Colburn

发明人： Shigeyuki Yamamoto ,  Warren Colburn

IPC分类号： F03B15/06

CPC分类号： F03D13/25 ,  B63B21/50 ,  B63B2035/446 ,  B63B2039/067 ,  F03D1/02 ,  F03D1/04 ,  F03D9/008 ,  F03D13/10 ,  F03D13/40 ,  F05B2210/18 ,  F05B2240/13 ,  F05B2240/40 ,  F05B2240/93 ,  F05B2240/95 ,  F05B2240/96 ,  F05B2250/132 ,  Y02E10/38 ,  Y02E10/721 ,  Y02E10/725 ,  Y02E10/727 ,  Y10S416/04 ,  Y10S416/06

摘要： A floating power generation assembly comprises at least three floating units (900) floating on a body of water, and at least three anchors (916) secured to a solid surface beneath the body of water, each of the floating units (900) being provided with power generation means, the floating units (900) being arranged substantially at the vertices of at least one equilateral triangle. The invention also provides ship-borne apparatus for deploying the floating units of such a power generation assembly and a novel multiple wind turbine assembly.

摘要翻译： 浮动发电组件包括漂浮在水体上的至少三个浮动单元（900）和固定到水体下面的固体表面的至少三个锚固件（916），每个浮动单元（900）被提供 利用发电装置，浮动单元（900）基本上被布置在至少一个等边三角形的顶点处。 本发明还提供了用于部署这种发电组件的浮动单元和新型多风力涡轮机组件的船载设备。

公开(公告)号：US06648976B1

公开(公告)日：2003-11-18

申请号：US09511787

申请日：2000-02-23

申请人： Izuru Matsuda ,  Hideo Haraguchi ,  Takuya Matsui ,  Shigeyuki Yamamoto

发明人： Izuru Matsuda ,  Hideo Haraguchi ,  Takuya Matsui ,  Shigeyuki Yamamoto

IPC分类号： C23C1600

CPC分类号： H01L21/6831 ,  G21K5/04 ,  H01J37/32009 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/6875

摘要： A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.

摘要翻译： 等离子体处理装置包括用于从其中排出气体的真空室，用于在其中引入反应气体，并通过高频电力施加来产生等离子体。 在真空室中设置基板保持台，其中基板保持台包括具有凹部的固定面，其中待进行等离子体处理的基板的背面保持在设定面上。

公开(公告)号：US06642533B2

公开(公告)日：2003-11-04

申请号：US09768065

申请日：2001-01-24

申请人： Hideo Haraguchi ,  Izuru Matsuda ,  Shigeyuki Yamamoto

发明人： Hideo Haraguchi ,  Izuru Matsuda ,  Shigeyuki Yamamoto

IPC分类号： G01N2162

CPC分类号： H01L21/67265 ,  H01L21/67772 ,  Y10S414/136 ,  Y10S414/137

摘要： A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.

摘要翻译： 基板检测传感器可操作地连接到门移动机构，用于相对于容纳多个基板的密封容器打开/关闭前门。 基板检测传感器进入密封容器，并与前门一体地下降地连续地检测基板，并且当检测到所有的基板时，从密封容器缩回。

公开(公告)号：US5859162A

公开(公告)日：1999-01-12

申请号：US604456

申请日：1996-02-21

申请人： Shigeyuki Yamamoto ,  Hiroyuki Nishimura ,  Hiroshi Adachi

发明人： Shigeyuki Yamamoto ,  Hiroyuki Nishimura ,  Hiroshi Adachi

IPC分类号： C08L83/04 ,  C07F7/21 ,  C08G77/12 ,  C08G77/14 ,  C08G77/22 ,  C08G77/34 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C08G77/06

CPC分类号： C08G77/34 ,  C07F7/21 ,  C08G77/12 ,  H01L23/5329 ,  H01L2924/0002

摘要： A high-purity silicone ladder polymer of high molecular weight which contains 1 ppm or less of sodium, potassium, iron, copper, lead, magnesium, manganese and chlorine, and 1 ppb or less of uranium and thorium; and whose polymerization degree is 600 to 10000. Trialkoxysilane compounds or trichlorosilane compounds are hydrolyzed to produce a high-purity silicone ladder prepolymer whose polymerization degree is 5 to 600. The silicone ladder prepolymer is subjected to dehydrative condensation by using a nucleophilic reagent as a catalyst, and then purified in a dissolution/reprecipitation method to yield the silicone ladder polymer.

摘要翻译： 含有1ppm以下钠，钾，铁，铜，铅，镁，锰，氯等1ppm以下铀，钍1ppm以上的高分子量高分子硅酸酯聚合物。 聚合度为600〜10000.将三烷氧基硅烷化合物或三氯硅烷化合物水解，得到聚合度为5〜600的高纯度硅氧烷预聚物。使用亲核试剂作为催化剂使硅树脂预聚物进行脱水缩合 ，然后在溶解/再沉淀法中纯化，得到硅树脂聚合物。

公开(公告)号：US5804089A

公开(公告)日：1998-09-08

申请号：US550116

申请日：1995-10-30

申请人： Masaki Suzuki ,  Shigeyuki Yamamoto

发明人： Masaki Suzuki ,  Shigeyuki Yamamoto

IPC分类号： H01L21/302 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  C23F1/02 ,  C23C14/50 ,  C23C16/00

CPC分类号： H01J37/3244 ,  H01L21/6838

摘要： A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas in the container. A pair of electrodes includes one which has a concave surface for holding the substrate thereon. A high frequency power supply device supplies a high frequency power to the electrodes, a gas feed device for filling between the substrate and the electrodes with an inert gas to cool the substrate, and a holding device for pressing a side end face of the substrate in a direction along a surface of the substrate to shape the substrate into a concave while holding the substrate on the concave surface of the electrode.

摘要翻译： 等离子体处理装置包括容纳被处理基板的真空容器。 真空排出装置从容器排出气体，气体供给装置将气体供给到容器中。 一对电极包括具有用于将基板保持在其上的凹面的电极。 高频电源装置向电极供给高频电力，用惰性气体填充基板和电极之间的气体供给装置以冷却基板，以及用于将基板的侧端面按压的保持装置 沿着基板的表面的方向，以将基板保持在电极的凹面上，将基板成形为凹状。

公开(公告)号：US5728630A

公开(公告)日：1998-03-17

申请号：US743190

申请日：1996-11-05

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5565030A

公开(公告)日：1996-10-15

申请号：US401277

申请日：1995-03-09

申请人： Tetsuo Kado ,  Shigeyuki Yamamoto

发明人： Tetsuo Kado ,  Shigeyuki Yamamoto

IPC分类号： C30B23/08 ,  C30B23/02 ,  C30B29/68 ,  H01L31/10 ,  C30B25/18

CPC分类号： C30B23/02 ,  C30B29/68

摘要： A novel method is proposed for the preparation of a superlattice multilayered film, which has a multilayered structure alternately consisting of epitaxially grown layers of a metal and layers of a metal oxide formed on the surface of a substrate and is useful as high-speed electronic devices, soft X-ray reflectors, neutron beam polarizers and the like. According to the discovery leading to this invention, good epitaxial growth of the layers can be accomplished when the metal has a face-centered cubic lattice structure and the metal oxide has a sodium chloride-type cubic lattice structure and the difference in the lattice constant between the metal and the metal oxide is small enough as in the combinations of silver and nickel oxide or magnesium oxide and nickel and nickel oxide.

摘要翻译： 提出了一种制备超晶格多层膜的新方法，该超晶格多层膜具有交替地由金属外延生长层和形成在基板表面上的金属氧化物层组成的多层结构，并且可用作高速电子器件 ，软X射线反射器，中子束偏振器等。 根据本发明的发现，当金属具有面心立方晶格结构并且金属氧化物具有氯化钠型立方晶格结构并且晶格常数之间的差异可以在层之间实现良好的外延生长 金属和金属氧化物足够小，如银和氧化镍或氧化镁和镍和氧化镍的组合。

公开(公告)号：US5399648A

公开(公告)日：1995-03-21

申请号：US110367

申请日：1993-08-23

申请人： Shigeyuki Yamamoto ,  Hiroshi Adachi

发明人： Shigeyuki Yamamoto ,  Hiroshi Adachi

IPC分类号： C08G77/04 ,  C08G77/06 ,  C08G77/16 ,  C08G77/22 ,  C08G77/34 ,  H01L23/29 ,  H01L23/498 ,  H01L23/532

CPC分类号： C08G77/04 ,  C08G77/06 ,  C08G77/34 ,  H01L23/296 ,  H01L23/49894 ,  H01L23/5329 ,  H01L2924/0002

摘要： High-purity silicone ladder polymer a weight average molecular weight of 600-1,000,000 and a molecular weight distribution of no more than 10 and it contains no more than 1 ppm each of sodium, potassium, iron, copper, lead and chlorine and no more than 1 ppb each of uranium and thorium. This silicone ladder polymer is very pure, has high molecular weight and yet can be produced easily. Hence, it can advantageously be used as a material for making surface protective or inter-level insulation films in semiconductor devices.

摘要翻译： 高纯度硅树脂聚合物的重均分子量为600-1,000,000，分子量分布不超过10，并含有不超过1ppm的钠，钾，铁，铜，铅和氯，不超过 每铀和钍1 ppb。 这种硅树脂聚合物是非常纯的，具有高分子量，但可以容易地生产。 因此，它可以有利地用作半导体器件中的表面保护层或层间绝缘膜的材料。

公开(公告)号：US4746397A

公开(公告)日：1988-05-24

申请号：US3716

申请日：1987-01-15

申请人： Nobuhisa Maeda ,  Takashi Suzuki ,  Shigeyuki Yamamoto

发明人： Nobuhisa Maeda ,  Takashi Suzuki ,  Shigeyuki Yamamoto

IPC分类号： H01L21/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/67023

摘要： A treatment method for plate-shaped substrate capable of uniformly performing the treating operation, performing a large amount of treatment, and facilitating the automation of the work independently of the surface nature of the substrate such as base plates of Si wafer for integrated circuit manufacturing use. The method is achieved by making it easier for the whole substrate surface to be wetted with the treatment liquid, through exposing the substrate to liquid or gas material which is soluble mutually with a treatment liquid prior to treatment with the treating liquid, to avoid treatment and thus uneven treatment to improve the yield.

摘要翻译： 一种板状基板的处理方法，其能够均匀地进行处理操作，进行大量处理，并且便于独立于诸如用于集成电路制造用途的Si晶片的基板的基板的表面性质的工作自动化 。 该方法是通过使处理液更容易地将整个基材表面润湿，通过在用处理液处理之前将基材暴露于与处理液相溶的液体或气体材料，以避免处理和 因此不均匀处理提高产量。