公开(公告)号：US08741098B2

公开(公告)日：2014-06-03

申请号：US11889340

申请日：2007-08-10

申请人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

发明人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32532

摘要： Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

摘要翻译： 本文公开了一种用于等离子体处理系统1的表2，其包括用作等离子体形成的下电极21的导电构件，形成在导电构件上的下电介质层22（第一电介质层），使得其覆盖 导电构件的上表面的中心，用于使通过基板均匀地施加到等离子体的高频电场;以及具有相对介电常数为100的上电介质层24（第二电介质层） 更多地形成在导电构件上，使得其至少与衬底的边缘接触，以便防止沿着导电构件面传播的高频电流泄漏到衬底的外部（ 晶圆W）。

公开(公告)号：US07922862B2

公开(公告)日：2011-04-12

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US20090047795A1

公开(公告)日：2009-02-19

申请号：US12192388

申请日：2008-08-15

申请人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

发明人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。

公开(公告)号：US20080073032A1

公开(公告)日：2008-03-27

申请号：US11889338

申请日：2007-08-10

申请人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

发明人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

IPC分类号： H01L21/306

CPC分类号： H01J37/32706 ,  H01J37/32091

摘要： [Object] To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem] A stage 1 for a plasma processing apparatus 2 comprises: a conductive member 21 serving as an electrode for generating a plasma or the like; a dielectric layer 22 covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed (wafer W); and an electrostatic chuck laminated on the dielectric layer 22, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency. An outer edge of the dielectric layer 22 is positioned right below or outside an inner edge of at least one separation area 23c of the separated electrode films 23b and 23d. The separated electrode films 23b and 23d are insulated to each other as to a radiofrequency.

摘要翻译： 为了提供等离子体处理装置的载物台，能够提高等离子体的电场强度的均匀性，从而提高等离子体处理对基板的面内均匀性，并且提供等离子体处理装置 提供这个阶段。 解决问题的手段等离子体处理装置2的阶段1包括：作为用于产生等离子体等的电极的导电部件21; 覆盖导电构件的上表面的中心部分的电介质层22，用于使通过待加工基板（晶片W）施加到等离子体的射频电场均匀化; 以及层叠在电介质层22上的静电吸盘，电吸盘具有嵌入其中的多个电极膜，电极膜在载物台的径向上彼此分离，以允许射频通过。 电介质层22的外边缘位于分离的电极膜23b和23d的至少一个分离区域23c的内边缘的正下方或外侧。 分离的电极膜23b和23d对于射频而彼此绝缘。

公开(公告)号：US20080038162A1

公开(公告)日：2008-02-14

申请号：US11889340

申请日：2007-08-10

申请人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

发明人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

IPC分类号： B01J19/08

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32532

摘要： The present invention provides a table for use in a plasma processing system that makes it possible to obtain a substrate processed with plasma, improved in within-substrate uniformity, and a plasma processing system comprising such a table. A table 2 for use in a plasma processing system 1 comprises an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

摘要翻译： 本发明提供了一种用于等离子体处理系统的表格，其使得可以获得用等离子体处理的基板，改善基板内均匀性，以及包括这种表格的等离子体处理系统。 用于等离子体处理系统1的工作台2包括用作等离子体形成的下部电极21的导电部件，形成在导电部件上的下部电介质层22（第一电介质层），使得其覆盖 导电构件的上表面，用于使经由衬底均匀地施加到等离子体的高频电场，以及形成有相对介电常数为100以上的上电介质层24（第二电介质层），形成在 所述导电构件至少与衬底的边缘接触，以便防止沿着导电构件面传播的高频电流泄漏到衬底（晶片W）的外部。

公开(公告)号：US20060081337A1

公开(公告)日：2006-04-20

申请号：US11292368

申请日：2005-12-02

申请人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

发明人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

IPC分类号： C23F1/00 ,  C23C14/00

CPC分类号： H01J37/32091 ,  H01J2237/2001

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。 设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

公开(公告)号：US20050211383A1

公开(公告)日：2005-09-29

申请号：US10525240

申请日：2003-08-21

申请人： Koji Miyata ,  Kazuyuki Tezuka ,  Koichi Tateshita ,  Hiroo Ono ,  Kazuya Nagaseki ,  Shinji Himori

发明人： Koji Miyata ,  Kazuyuki Tezuka ,  Koichi Tateshita ,  Hiroo Ono ,  Kazuya Nagaseki ,  Shinji Himori

IPC分类号： C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31116 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32688 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/67069

摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.

摘要翻译： 公开了一种用于磁控管等离子体的磁场发生器。 磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。 控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。 此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

公开(公告)号：US10147633B2

公开(公告)日：2018-12-04

申请号：US13611327

申请日：2012-09-12

申请人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： B65G43/00 ,  B65G47/90 ,  H01L21/677 ,  H01L21/687

摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

公开(公告)号：US09859146B2

公开(公告)日：2018-01-02

申请号：US14238860

申请日：2012-08-13

申请人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： H01L21/00 ,  H01L21/687 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/68742 ,  H01L21/30604 ,  H01L21/67063

摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.