公开(公告)号：US06372981B1

公开(公告)日：2002-04-16

申请号：US09635125

申请日：2000-08-08

申请人： Takashi Ueda ,  Chouho Yamagishi ,  Osamu Goto

发明人： Takashi Ueda ,  Chouho Yamagishi ,  Osamu Goto

IPC分类号： H01L3104

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/0693 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S117/902 ,  Y10S438/933

摘要： A group-IV semiconductor substrate has an inclined front surface, the inclination being toward a direction differing from the crystal lattice direction. The substrate is cleansed by heating in the presence of a gas including a compound of the group-IV substrate element. A source gas of a group-III element is then supplied, forming an atomic film of the group-III element on the substrate surface. Starting at the same time, or shortly afterward, a source gas of a group-V element is supplied, and a III-V compound semiconductor hetero-epitaxial layer is grown. Chemical bonding of the group-III element to the group-IV substrate surface produces a crystal alignment of the hetero-epitaxial layer that leads to improved conversion efficiency when the semiconductor substrate is used in the fabrication of solar cells with compound semiconductor base and emitter layers.

摘要翻译： IV族半导体衬底具有倾斜的前表面，该倾斜面朝向与<010>晶格方向不同的方向。 通过在包括IV族底物元素的化合物的气体的存在下加热来清洗基材。 然后提供III族元素的源气体，在基底表面上形成III族元素的原子膜。 同时或不久之后，提供V族元素的源气体，生长III-V族化合物半导体异质外延层。 III族元素与Ⅳ族基底表面的化学键合产生异质外延层的晶体取向，当半导体衬底用于制造具有化合物半导体基底和发射极层的太阳能电池时，导致改善的转换效率 。

公开(公告)号：US4158349A

公开(公告)日：1979-06-19

申请号：US748660

申请日：1976-12-08

申请人： Osamu Goto ,  Masao Watanabe ,  Yoshio Kadoshima

发明人： Osamu Goto ,  Masao Watanabe ,  Yoshio Kadoshima

IPC分类号： F02P5/10

CPC分类号： F02P5/103

摘要： An ignition timing control system for an internal combustion engine, including a vacuum actuator connected to turn a point base about the axis of the rotary cam which operates the breaker points to advance or retard the ignition timing. The vacuum actuator employs two vacuum chambers, one used primarily to advance the timing, the other used to retard the timing. Each chamber communicates with an engine intake passage downstream from a throttle valve. Electromagnetic selector valves, one associated with each vacuum chamber, serve to connect each vacuum chamber to the engine intake passage, or alternatively to vent each vacuum chamber to atmosphere. These selector valves may be energized by a temperature switch, a velocity switch or a cruise switch. A check valve maintains vacuum intensity in the spark advance chamber when the vacuum intensity at the engine intake passage is lowered by virtue of the opening of the throttle valve.

摘要翻译： 一种用于内燃机的点火正时控制系统，包括一个真空致动器，该真空致动器被连接成围绕旋转凸轮的轴线转动点基座，该转动凸轮操作断路器点以提前或延迟点火正时。 真空致动器采用两个真空室，一个主要用于提前定时，另一个用于延迟定时。 每个室与节气门下游的发动机进气通道连通。 与每个真空室相关联的电磁选择阀用于将每个真空室连接到发动机进气通道，或者可选地将每个真空室排放到大气中。 这些选择阀可以由温度开关，速度开关或巡航开关激励。 当通过节流阀的打开使发动机进气通道的真空强度降低时，止回阀保持在火花提前室中的真空强度。

公开(公告)号：US09478744B2

公开(公告)日：2016-10-25

申请号：US13989987

申请日：2011-11-28

申请人： Osamu Goto ,  Fumiko Kako ,  Masayuki Soga ,  Kazuei Ohuchi

发明人： Osamu Goto ,  Fumiko Kako ,  Masayuki Soga ,  Kazuei Ohuchi

IPC分类号： H01L51/54 ,  C09K11/06 ,  H01L51/00 ,  C08G61/12 ,  C08K5/34 ,  H01L51/50

CPC分类号： H01L51/0043 ,  C08G61/12 ,  C08G2261/124 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/374 ,  C08G2261/411 ,  C08G2261/5242 ,  C08G2261/95 ,  C08K5/34 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0085 ,  H01L51/50

摘要： A polymer compound is provided for achieving satisfactory brightness even at a low driving voltage when applied to a light-emitting device. A preferred embodiment includes multiple first groups and a block (A) having a structure in which the first groups are linked by a second group represented by formula (0-0), and includes at least one of a group represented by formula (0-1) or a group represented by formula (0-2) as the first group; wherein Ar0 represents an optionally substituted arylene group or divalent aromatic heterocyclic group having a structure different from the first group; n represents an average chain length of Ar0 and equals 1.0 to 8.0; and X11 to X16 and X21 to X25 each represent a carbon atom or a nitrogen atom, where two or three of X11 to X16 are a nitrogen atom and three of X21 to X25 are a nitrogen atom.

公开(公告)号：US08918005B2

公开(公告)日：2014-12-23

申请号：US13469160

申请日：2012-05-11

申请人： Kenta Ogata ,  Tsutomu Udaka ,  Osamu Goto

发明人： Kenta Ogata ,  Tsutomu Udaka ,  Osamu Goto

IPC分类号： G03G15/00 ,  G01N21/55 ,  H04N1/00 ,  G01N21/17 ,  G03G15/01 ,  H04N5/335 ,  H04N1/047 ,  H04N1/50

CPC分类号： G03G15/0189 ,  G01N21/17 ,  G03G15/01 ,  G03G15/5054 ,  G03G2215/0132 ,  H04N1/00013 ,  H04N1/00023 ,  H04N1/00031 ,  H04N1/00045 ,  H04N1/0005 ,  H04N1/00055 ,  H04N1/00063 ,  H04N1/00087 ,  H04N1/0009 ,  H04N1/047 ,  H04N1/506 ,  H04N5/335 ,  H04N2201/04713 ,  H04N2201/04722 ,  H04N2201/04732 ,  H04N2201/04793

摘要： A reflection sensor includes the following elements. A light emitting unit emits light to an area of an image forming apparatus where first detection images of plural colors used for detecting amounts of their misregistration are formed. A first light restricting member/configuration restricts light emitted from the light emitting unit. A light receiver is disposed in an optical path of regular reflection light, and receives reflected light and outputs a signal representing an amount of received light. A second light restricting member/configuration is disposed in the optical path of the regular reflection light and restricts light to be received by the light receiver. The value obtained by dividing a diameter of the first light restricting member/configuration by that of the second light restricting member/configuration ranges from substantially 0.5 to 1.9, and the diameters of the first and second light restricting members/configurations are each 1.5 mm or smaller.

摘要翻译： 反射传感器包括以下元件。 发光单元向图像形成装置的区域发光，其中形成用于检测其重合失调量的多种颜色的第一检测图像。 第一光限制构件/构造限制从发光单元发射的光。 光接收器设置在正反射光的光路中，并且接收反射光并输出表示接收光量的信号。 第二光限制构件/配置设置在正反射光的光路中，并限制由光接收器接收的光。 通过将第一限光构件/构造的直径除以第二限光构件/构造的直径而得到的值基本上为0.5〜1.9，第一和第二限光构件/构造的直径分别为1.5mm或 较小。

公开(公告)号：US08460958B2

公开(公告)日：2013-06-11

申请号：US13080802

申请日：2011-04-06

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20120319090A1

公开(公告)日：2012-12-20

申请号：US13510178

申请日：2010-11-18

申请人： Seiji Shinkai ,  Shuichi Haraguchi ,  Tomohiro Shirake ,  Masashi Ogawa ,  Shuhei Nakatani ,  Kei Sakanoue ,  Osamu Goto ,  Hidenobu Kakimoto

发明人： Seiji Shinkai ,  Shuichi Haraguchi ,  Tomohiro Shirake ,  Masashi Ogawa ,  Shuhei Nakatani ,  Kei Sakanoue ,  Osamu Goto ,  Hidenobu Kakimoto

IPC分类号： H01L51/30 ,  H01L51/46 ,  H01L51/40 ,  H01L51/54

CPC分类号： H01L51/0512 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  G03F7/0046 ,  H01L27/3246 ,  H01L51/0558 ,  H01L51/56 ,  H01L2227/323 ,  H05B33/10

摘要： A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a π-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.

摘要翻译： 本发明的一个问题是提供一种具有良好特性和长寿命的器件，其中通过涂覆方法在所需区域中形成功能性薄膜; 薄膜晶体管; 一种制造该装置的方法; 以及薄膜晶体管的制造方法。 这个问题可以通过一种器件来解决，该器件包括：衬底，形成在衬底上的第一电极，形成在第一电极上的功能性薄膜，以及设置在功能性薄膜上方的第二电极，其特征在于， 围绕形成功能性薄膜的区域，含有其中含氟基团和共轭体系的基团通过环烯烃结构或环烷烃结构结合在一起的化合物的膜。

公开(公告)号：US08270450B2

公开(公告)日：2012-09-18

申请号：US12956435

申请日：2010-11-30

申请人： Junji Sawahata ,  Masaru Kuramoto ,  Osamu Goto

发明人： Junji Sawahata ,  Masaru Kuramoto ,  Osamu Goto

IPC分类号： H01S3/08

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/34333

摘要： A method of manufacturing a semiconductor laser having an end surface window structure includes the steps of forming a groove near at least the formation position of the end surface window structure of a substrate, and growing a nitride-based group III-V compound semiconductor layer including an active layer formed of a nitride-based group III-V compound semiconductor including at least In and Ga on the substrate.

摘要翻译： 一种制造具有端面窗结构的半导体激光器的方法包括以下步骤：在至少基板的端面窗结构的形成位置附近形成槽，并且生长氮化物基III-V族化合物半导体层，其包括 由在衬底上至少包含In和Ga的氮化物基III-V族化合物半导体形成的有源层。

公开(公告)号：US20110284829A1

公开(公告)日：2011-11-24

申请号：US13146382

申请日：2010-01-28

申请人： Daisuke Fukushima ,  Osamu Goto ,  Kohei Asada ,  Nobuhiko Akino

发明人： Daisuke Fukushima ,  Osamu Goto ,  Kohei Asada ,  Nobuhiko Akino

IPC分类号： H01L51/54 ,  C08F28/06 ,  C09K11/06 ,  C08F126/06 ,  C08L39/00

CPC分类号： C08G61/12 ,  C08G61/122 ,  C08G2261/3241 ,  C08G2261/5222 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0043

摘要： A polymer compound having a repeating unit represented by the following formula (1): (wherein Ar1 and Ar2 represent an arylene group or a di-valent aromatic heterocyclic group, Ar3 represents a single bond, an unsubstituted or substituted (a+1)-valent aromatic hydrocarbon group or (a+1)-valent aromatic heterocyclic group, R1 and R2 represent an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a mono-valent heterocyclic group, an amino group, a silyl group, a halogen atom, a carboxyl group or a cyano group. a represents an integer of 1 or more, with the proviso that a is 1 when Ar3 is a single bond. b and c represent an integer of 0 to 4).

摘要翻译： 具有下述式（1）表示的重复单元的高分子化合物（其中Ar1和Ar2表示亚芳基或2价芳香族杂环基，Ar3表示单键，未取代或取代的（a + 1） - 芳香族烃基或（a + 1）价芳香族杂环基，R 1和R 2表示烷基，烷氧基，芳基，芳氧基，1价杂环基，氨基，甲硅烷基 卤素原子，羧基或氰基，a表示1以上的整数，条件是当Ar 3为单键时a为1，b表示0〜4的整数。

公开(公告)号：US20110127512A1

公开(公告)日：2011-06-02

申请号：US12997535

申请日：2009-06-10

申请人： Osamu Goto ,  Kohei Asada

发明人： Osamu Goto ,  Kohei Asada

IPC分类号： H01L51/54 ,  C08G75/32 ,  C08L81/02 ,  C09K11/02 ,  H01B1/12 ,  H01L51/46

CPC分类号： H01L51/0036 ,  C08G61/12 ,  C08G61/126 ,  C08G2261/3162 ,  C08G2261/3223 ,  C09K11/06 ,  C09K2211/1483 ,  G02F1/133602 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/5012

摘要： A copolymer having a block (A′) composed of a repeating unit represented by the formula (I-1), and/or a block (A) containing a repeating unit represented by the formula (I-1) and a repeating unit represented by the formula (II). (wherein X1, X2 and X3 may be the same or mutually different and represent an oxygen atom, a sulfur atom or C(R7)═C(R8)—, and R1, R2, R2, R4, R5, R6, R7 and R8 may be the same or mutually different and represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, an arylalkynyl group, a mono-valent heterocyclic group, a heterocyclic thio group, an amino group, a silyl group, an acyl group, an acyloxy group, an imine residue, an amide group, an acid imide group, a carboxyl group, a cyano group or a nitro group, and m and n may be the same or mutually different and represent 2 or 3. A plurality of R1s may be the same or mutually different. A plurality of R2s may be the same or mutually different. A plurality of R5s may be the same or mutually different. A plurality of R6s may be the same or mutually different. A plurality of X1s may be the same or mutually different. A plurality of X3s may be the same or mutually different.) —(Ar1)—  (II) (wherein Ar1 represents an arylene group.).

摘要翻译： 具有由式（I-1）表示的重复单元构成的嵌段（A'）和/或含有式（I-1）表示的重复单元的嵌段（A）和表示的重复单元的共聚物 由式（II）表示。 （其中X1，X2和X3可以相同或相互不同，表示氧原子，硫原子或C（R7）= C（R8） - ，R1，R2，R2，R4，R5，R6，R7和 R8可以相同或相互不同，表示氢原子，卤素原子，烷基，烷氧基，烷硫基，芳基，芳氧基，芳硫基，芳基烷基，芳基烷氧基， 芳基烷硫基，芳基烯基，芳基炔基，1价杂环基，杂环硫基，氨基，甲硅烷基，酰基，酰氧基，亚胺残基，酰胺基，酸 酰亚胺基，羧基，氰基或硝基，m和n可以相同或相互不同，表示2或3.多个R 1可以相同或相互不同，多个R 2可以是 多个R 5可以相同或相互不同，多个R6可以相同或相互不同，A p X1的可能性可能相同或相互不同。 多个X3可以相同或相互不同。） - （Ar1） - （II）（其中Ar1表示亚芳基）。

公开(公告)号：US20070117357A1

公开(公告)日：2007-05-24

申请号：US11626098

申请日：2007-01-23

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。