公开(公告)号：US07740704B2

公开(公告)日：2010-06-22

申请号：US10875949

申请日：2004-06-25

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract translation: 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US20070298972A1

公开(公告)日：2007-12-27

申请号：US11425883

申请日：2006-06-22

Applicant: MARTIN KENT ,  Eric J. Strang

Inventor： MARTIN KENT ,  Eric J. Strang

IPC: H01L39/24

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including source temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在包括源温度和气体压力在内的受控条件下暴露于气态化学物质，包括HF和任选的NH 3。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US07166233B2

公开(公告)日：2007-01-23

申请号：US10076099

申请日：2002-02-15

Applicant: Wayne L. Johnson ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Eric J. Strang

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32137 ,  H01L21/31116

Abstract: In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.

Abstract translation: 在用于通过以下方式对反应器室中的衬底进行等离子体辅助处理的方法：将至少一种工艺气体引入反应器室; 以及通过在所述室内建立RF电磁场并且允许所述场与所述工艺气体相互作用来在所述反应器室内产生等离子体，所述电磁场被控制为具有能够在至少两个值之间周期性变化的能级，所述至少两个值足以维持 等离子体，使得每个能级值与在衬底上分别不同的处理过程的性能相关联。

公开(公告)号：US07075031B2

公开(公告)日：2006-07-11

申请号：US10399981

申请日：2001-10-24

Applicant: Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

IPC: B23K9/00

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Abstract translation: 一种用于控制电极（4）的温度的方法和结构。 在蚀刻第一晶片之前对电极进行加热，并保持硅电极的（时间上）固定和（空间上）均匀的温度。 电阻式加热器元件（1）嵌入电极（3）的外壳内或形成电极的一部分。 电阻加热器元件形成多区类型的加热器，以使温度不均匀化最小化。 电阻加热器元件被分成多个区域，其中可以单独地调节每个区域的功率，从而实现电极所需的温度均匀性。 将电极预热到适当的工作温度，消除半导体晶片的“第一晶片效应”和非均匀蚀刻。

公开(公告)号：US06806653B2

公开(公告)日：2004-10-19

申请号：US10355203

申请日：2003-01-31

Applicant: Eric J. Strang ,  Andrej S. Mitrovic

Inventor： Eric J. Strang ,  Andrej S. Mitrovic

IPC: H01J724

CPC classification number: H01J37/32174 ,  H01J37/32082

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract translation: 一种用于等离子体处理系统的电极组件，其包括适于耦合到RF能量源的基极电极，可移除地耦合到所述基极电极的可移除电极以及插入所述基极电极的表面和 可拆卸电极。

公开(公告)号：US08562743B2

公开(公告)日：2013-10-22

申请号：US13098991

申请日：2011-05-02

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C18/00 ,  C23C18/1619 ,  C23C18/1658 ,  C23C18/1678 ,  C23C18/1685 ,  C23C18/40

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Abstract translation: 一种高压处理系统，包括被构造成容纳基板的室。 流体引入系统包括配置成供应第一组合物和第二组合物的至少一种组合物供应系统，以及配置成供应流体的至少一个流体供应系统。 流体供应系统被配置为交替地和不连续地将第一组合物和第二组合物引入流体内的室。

公开(公告)号：US08050900B2

公开(公告)日：2011-11-01

申请号：US10673583

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型执行第一原理模拟，以提供与由半导体处理工具执行的处理相关的虚拟传感器测量，并且虚拟传感器测量用于促进由半导体处理工具执行的处理。

公开(公告)号：US08014991B2

公开(公告)日：2011-09-06

申请号：US10673501

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟，以提供由半导体处理工具执行的处理的仿真结果，并且将模拟结果用作表征由半导体处理执行的处理的数据集的一部分 工具。

公开(公告)号：US20100237046A1

公开(公告)日：2010-09-23

申请号：US12772232

申请日：2010-05-02

Applicant: Martin Kent ,  Eric J. Strang

Inventor： Martin Kent ,  Eric J. Strang

IPC: H01L21/306 ,  C23F1/02

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US20100193471A1

公开(公告)日：2010-08-05

申请号：US12754662

申请日：2010-04-06

Applicant: Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: C23F1/00 ,  C23C16/52

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。