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    Rotational transition based clock, rotational spectroscopy cell, and method of making same
    32.
    发明授权
    Rotational transition based clock, rotational spectroscopy cell, and method of making same 有权
    基于旋转跃迁的时钟，旋转光谱单元及其制作方法

    公开(公告)号：US09529334B2

    公开(公告)日：2016-12-27

    申请号：US14674197

    申请日：2015-03-31

    Applicant: Texas Instruments Incorporated

    Inventor： Juan Alejandro Herbsommer ,  Benjamin S. Cook ,  Phillip Nadeau ,  Simon Joshua Jacobs ,  Django Earl Trombley

    IPC: H03L7/26 ,  G04F5/14 ,  G01N29/44 ,  G01N29/36

    CPC classification number: G04F5/145 ,  G01N29/36 ,  G01N29/44 ,  G04F5/14 ,  H03L7/26

    Abstract: Described examples include a millimeter wave atomic clock apparatus, chip scale vapor cell, and fabrication method in which a low pressure dipolar molecule gas is provided in a sealed cavity with a conductive interior surface forming a waveguide. Non-conductive apertures provide electromagnetic entrance to, and exit from, the cavity. Conductive coupling structures formed on an outer surface of the vapor cell near the respective non-conductive apertures couple an electromagnetic field to the interior of the cavity for interrogating the vapor cell using a transceiver circuit at a frequency that maximizes the rotational transition absorption of the dipolar molecule gas in the cavity to provide a reference clock signal for atomic clock or other applications.

    Abstract translation: 所描述的实例包括毫米波原子钟装置，芯片尺度蒸汽池及其制造方法，其中低密度偶极子分子气体被设置在具有形成波导的导电内表面的密封腔中。 非导电孔径为腔提供电磁入口并从腔排出。 形成在相应不导电孔隙附近的蒸气室的外表面上的导电耦合结构将电磁场耦合到空腔的内部，以便使用收发器电路以使得偶极子的旋转跃迁吸收最大化的频率 在腔中分配气体，为原子钟或其他应用提供参考时钟信号。

    Hermetically sealed molecular spectroscopy cell
    36.
    发明授权
    Hermetically sealed molecular spectroscopy cell 有权

    公开(公告)号：US10549986B2

    公开(公告)日：2020-02-04

    申请号：US15697525

    申请日：2017-09-07

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Juan Alejandro Herbsommer ,  Simon Joshua Jacobs ,  Benjamin Stassen Cook ,  Adam Joseph Fruehling

    IPC: B81C1/00 ,  H01L23/08 ,  H01L21/768

    Abstract: An illustrate method (and device) includes etching a cavity in a first substrate (e.g., a semiconductor wafer), forming a first metal layer on a first surface of the first substrate and in the cavity, and forming a second metal layer on a non-conductive structure (e.g., glass). The method also may include removing a portion of the second metal layer to form an iris to expose a portion of the non-conductive structure, forming a bond between the first metal layer and the second metal layer to thereby attach the non-conductive structure to the first substrate, sealing an interface between the non-conductive structure and the first substrate, and patterning an antenna on a surface of the non-conductive structure.

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