摘要:
The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.
摘要:
A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.
摘要:
A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal. The high-resistance parts (23B) are located under the apertures (29) of the n-type window layer (24), respectively.
摘要:
A multilayer wiring board is composed of a core portion, a first wiring portion and a second wiring portion. The core portion includes a core insulating layer containing a carbon fiber material. The first wiring portion is bonded to the core portion and has a laminated structure including at least a first insulating layer and a first wiring pattern, the first insulating layer containing glass cloth. The second wiring portion is bonded to the first wiring portion and has a laminated structure including at least a second insulating layer and a second wiring pattern. The core portion, the first wiring portion and the second wiring portion are arranged in a stack.
摘要:
The invention pertains to a hydroprocessing catalyst comprising a Group VIB hydrogenation metal component, a non-noble Group VIII hydrogenation metal component, an alkali metal component, and silica. The catalyst has a specific surface area, total pore volume and pore size distribution. The invention also pertains to the use of this catalyst in hydroprocessing of heavy hydrocarbon feedstocks, e.g, in an ebullated bed process.
摘要:
The present invention provides a compact-sized reservoir with small power consumption. It suppresses possible oxidation of articles and growths of putrefactious aerobic organisms such as bacteria, fungi and the like, by storing the articles under an atmosphere of reduced oxygen concentration created by an oxygen pump device which makes use of an oxygen ion-conductive film. In a case of storing foods, the disclosed reservoir makes their long-term storing possible. The reservoir in accordance with the present invention uses an oxygen pump device provided with an oxygen ion-conductive electrolyte film and a pair of electrodes formed on the both surfaces thereof.
摘要:
In an image forming apparatus, a toner cartridge is removably set to a toner supply device and used while being set to the toner supply device, and the toner cartridge includes a main body with a toner supply port and a spiral agitator being disposed within the main body and rotated by drive means.The apparatus also includes a reserve tank for a toner dispensing section including a toner container for containing toner supplied from a cartridge, and a toner supply section for receiving toner from the toner container and supplying the received toner to a developing unit. The toner container includes a spiral agitator for supplying toner to the toner supply section. An auger for transferring toner to the developing unit is disposed in the toner supply section. A toner transfer power of the spiral agitator is larger than that of the auger.An empty detector is disposed at such a location that, unsoiled by toner leaked from the toner cartridge, the empty sensor can sense, within the reserve tank, such an amount of toner left in the reserve tank as to allow the toner to be dispensed a prescribed number of times. A display means is also provided for displaying an empty state of the reserve tank according to an empty signal derived from the empty sensor.
摘要:
A semiconductor chip mounting layer of a package substrate unit includes an insulation layer, a conductive seed metal layer formed on the top surface of the insulation layer, conductive pads formed on the top surface of the conductive seed metal layer, metal posts formed substantially in the central portion on the top surface of the conductive pads, and a solder resist layer that is formed to surround the conductive pads and the metal posts.
摘要:
An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.
摘要:
A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.