Acoustooptic device and optical imaging apparatus using the same
    31.
    发明授权
    Acoustooptic device and optical imaging apparatus using the same 有权
    声光装置和使用其的光学成像装置

    公开(公告)号:US07855823B2

    公开(公告)日:2010-12-21

    申请号:US11571218

    申请日:2005-06-29

    IPC分类号: G02F1/11 G02F1/33

    CPC分类号: G02F1/0072

    摘要: The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.

    摘要翻译: 本发明提供即使在紫外线区域中的光也可以使用,没有激光损伤和光学损伤以及良好的声光性能的光学装置和使用该光学装置的光学成像装置。 根据本发明的声光装置包括高频信号输入部分(65),换能器部分(64)和声光介质(6)。 从高频信号输入部(65)输入的高频信号由换能器部(64)转换为机械振动,声光介质(6)的光学特性根据机械振动而变化。 声光介质由III族氮化物晶体形成。 根据本发明的光学成像装置包括光源,声光装置,驱动电路和图像平面。 来自光源的光根据来自驱动电路的信号被声光装置衍射,并且所得到的衍射光在图像平面上形成图像。 声光装置的声光介质由III族氮化物晶体形成。

    Solar Cell And Production Thereof
    33.
    发明申请
    Solar Cell And Production Thereof 有权
    太阳能电池及其制作

    公开(公告)号:US20070295396A1

    公开(公告)日:2007-12-27

    申请号:US10564116

    申请日:2005-01-12

    IPC分类号: H01L31/00

    摘要: A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal. The high-resistance parts (23B) are located under the apertures (29) of the n-type window layer (24), respectively.

    摘要翻译: 太阳能电池被配置为包括:基板(21); 形成在所述基板(21)上的导电膜(22); 形成在导电膜(22)上的化合物半导体层(23),包括含有Ib族元素,IIIb族元素和VIb族元素的p型半导体晶体; 形成在化合物半导体层(23)上的具有孔(29)的n型窗口层(24); 以及形成在n型窗口层(24)上的n型透明导电膜和在n型窗口层(24)的孔处的化合物半导体层(23)的部分上。 化合物半导体层(23)在化合物半导体层(23)的与导电膜(22)相反的一侧的表面附近的部分包含高电阻部(23B) 电阻部分(23B)包含掺杂在p型半导体晶体中的n型杂质。 高电阻部分(23B)分别位于n型窗口层(24)的孔(29)的下方。

    Multilayer wiring board
    34.
    发明授权
    Multilayer wiring board 有权
    多层接线板

    公开(公告)号:US07002080B2

    公开(公告)日:2006-02-21

    申请号:US10629770

    申请日:2003-07-30

    IPC分类号: H05K1/00

    摘要: A multilayer wiring board is composed of a core portion, a first wiring portion and a second wiring portion. The core portion includes a core insulating layer containing a carbon fiber material. The first wiring portion is bonded to the core portion and has a laminated structure including at least a first insulating layer and a first wiring pattern, the first insulating layer containing glass cloth. The second wiring portion is bonded to the first wiring portion and has a laminated structure including at least a second insulating layer and a second wiring pattern. The core portion, the first wiring portion and the second wiring portion are arranged in a stack.

    摘要翻译: 多层布线板由芯部,第一布线部和第二布线部构成。 芯部包括含有碳纤维材料的芯绝缘层。 第一布线部分结合到芯部,并具有包括至少第一绝缘层和第一布线图案的层压结构,第一绝缘层包含玻璃布。 第二布线部分接合到第一布线部分,并且具有至少包括第二绝缘层和第二布线图案的层叠结构。 芯部分,第一布线部分和第二布线部分布置成堆叠。

    Reservoir and method for storing articles
    36.
    发明授权
    Reservoir and method for storing articles 失效
    储存和储存物品的方法

    公开(公告)号:US6083459A

    公开(公告)日:2000-07-04

    申请号:US106151

    申请日:1998-06-29

    摘要: The present invention provides a compact-sized reservoir with small power consumption. It suppresses possible oxidation of articles and growths of putrefactious aerobic organisms such as bacteria, fungi and the like, by storing the articles under an atmosphere of reduced oxygen concentration created by an oxygen pump device which makes use of an oxygen ion-conductive film. In a case of storing foods, the disclosed reservoir makes their long-term storing possible. The reservoir in accordance with the present invention uses an oxygen pump device provided with an oxygen ion-conductive electrolyte film and a pair of electrodes formed on the both surfaces thereof.

    摘要翻译: 本发明提供了具有小功率消耗的紧凑型容器。 通过将制品在由使用氧离子传导膜的氧气泵装置产生的氧浓度降低的气氛下储存,来抑制物品的可能氧化和腐败性需氧生物如细菌,真菌等的生长。 在储存食物的情况下,所公开的储存器使其长期储存成为可能。 根据本发明的储存器使用设置有氧离子传导性电解质膜的氧气泵装置和形成在其两个表面上的一对电极。

    Image processing apparatus
    37.
    发明授权
    Image processing apparatus 失效
    图像处理装置

    公开(公告)号:US5307129A

    公开(公告)日:1994-04-26

    申请号:US766539

    申请日:1991-09-27

    IPC分类号: G03G15/08 G03G15/06

    摘要: In an image forming apparatus, a toner cartridge is removably set to a toner supply device and used while being set to the toner supply device, and the toner cartridge includes a main body with a toner supply port and a spiral agitator being disposed within the main body and rotated by drive means.The apparatus also includes a reserve tank for a toner dispensing section including a toner container for containing toner supplied from a cartridge, and a toner supply section for receiving toner from the toner container and supplying the received toner to a developing unit. The toner container includes a spiral agitator for supplying toner to the toner supply section. An auger for transferring toner to the developing unit is disposed in the toner supply section. A toner transfer power of the spiral agitator is larger than that of the auger.An empty detector is disposed at such a location that, unsoiled by toner leaked from the toner cartridge, the empty sensor can sense, within the reserve tank, such an amount of toner left in the reserve tank as to allow the toner to be dispensed a prescribed number of times. A display means is also provided for displaying an empty state of the reserve tank according to an empty signal derived from the empty sensor.

    摘要翻译: 在图像形成装置中,调色剂盒可拆卸地设置在调色剂供应装置上,并在被设置到调色剂供应装置时使用,并且调色剂盒包括具有调色剂供给口的主体和设置在主体内的螺旋搅拌器 通过驱动装置旋转。 该设备还包括用于调色剂分配部分的储存箱,其包括用于容纳从盒供应的调色剂的调色剂容器和用于从调色剂容器接收调色剂并将接收的调色剂供应到显影单元的调色剂供应部分。 调色剂容器包括用于向调色剂供应部分供应调色剂的螺旋搅拌器。 用于将调色剂转印到显影单元的螺旋钻布置在调色剂供应部分中。 螺旋搅拌器的调色剂转印功率大于螺旋搅拌器的调色剂转印功率。 一个空的检测器设置在这样的位置,即通过调色剂墨粉泄漏的调色剂未被污染,空的传感器可以在储备罐内感测剩余在储备罐中的这样一定量的调色剂以便分配调色剂 规定次数。 还提供显示装置,用于根据从空传感器得到的空信号显示储存箱的空状态。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
    39.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE 有权
    半导体发光元件,III族氮化物半导体基板及其制造这种III族氮化物半导体基板的方法

    公开(公告)号:US20100230713A1

    公开(公告)日:2010-09-16

    申请号:US12161393

    申请日:2007-01-19

    IPC分类号: H01L33/30 C30B19/02

    摘要: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

    摘要翻译: 本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件,通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件 。 半导体发光元件包括由包含锗(Ge)作为掺杂剂的III族氮化物半导体构成的衬底,由形成在衬底上的III族氮化物半导体构成的n型半导体层,由组 形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层,其中基板的锗(Ge)浓度为2×1017〜2×1019 cm-3。 使用包含至少III族元素,碱金属或碱土金属和锗(Ge)和氮的熔体在含氮气氛中生产基材。