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254 条记录 (耗时 0.033 秒)

    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
    31.
    发明授权
    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators 失效
    A位和/或B位修饰的PbZrTiO3材料和在铁电随机存取存储器中有用的（Pb，Sr，Ca，Ba，Mg）（Zr，Ti，Nb，Ta）O 3膜和高性能薄膜微致动器

    公开(公告)号：US06312816B1

    公开(公告)日：2001-11-06

    申请号：US09026946

    申请日：1998-02-20

    申请人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    IPC分类号： H01G406

    CPC分类号： H01L41/187 ,  C30B25/02 ,  C30B29/32

    摘要： A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

    摘要翻译： 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A-位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。

    Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures
    32.
    发明授权
    Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures 有权
    铟源试剂组合物及其在衬底上沉积含铟膜的用途和铟掺杂浅结微电子结构的离子注入

    公开(公告)号：US06204402B1

    公开(公告)日：2001-03-20

    申请号：US09218992

    申请日：1998-12-22

    申请人： Thomas H. Baum ,  Chongying Xu

    发明人： Thomas H. Baum ,  Chongying Xu

    IPC分类号： C07F500

    CPC分类号： H01L21/28556 ,  C07F5/00 ,  C23C16/18 ,  H01L21/26513 ,  Y10S427/101

    摘要： An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.

    摘要翻译： 铟前体组合物可用于在微电子器件结构中掺入铟，例如通过起泡器或液体输送MOCVD技术作为器件衬底上的含铟膜，或通过离子注入技术掺入器件衬底中的掺杂剂物质 。 前体组合物包含式R1R2InL的前体，其中R1和R2可以相同或不同并且独立地选自C 6 -C 10芳基，C 6 -C 10氟芳基，C 6 -C 10全氟芳基，C 1 -C 6烷基，C 1 -C 6氟代烷基， 或C 1 -C 6全氟烷基; L是β-二酮或羧酸酯。 含铟金属膜可以形成在诸如铟 - 铜金属化的衬底上，并且可以使用本发明的前体在集成电路中形成浅结铟离子注入结构。

    Method and apparatus for forming low dielectric constant polymeric films
    35.
    发明授权
    Method and apparatus for forming low dielectric constant polymeric films 失效
    用于形成低介电常数聚合物膜的方法和装置

    公开(公告)号：US6123993A

    公开(公告)日：2000-09-26

    申请号：US157966

    申请日：1998-09-21

    申请人： Chongying Xu ,  Thomas H. Baum ,  Ralph J. Carl ,  Edward A. Sturm

    发明人： Chongying Xu ,  Thomas H. Baum ,  Ralph J. Carl ,  Edward A. Sturm

    IPC分类号： B05D7/24 ,  C23C16/448

    CPC分类号： B05D1/60 ,  C23C16/4481

    摘要： A method and apparatus for forming a low dielectric constant polymeric film on a substrate, by liquid delivery of a parylene precursor reagent, in the form of an organic solution or a neat liquid, subsequent flash vaporization of the neat liquid or organic solution, pyrolytic "cracking" of the precursor to form the reactive monomer and/or reactive radical species, and condensation and polymerization of the monomer and/or reactive radical species to form a low dielectric constant polymeric film on the substrate. The low dielectric constant polymeric film may comprise a parylene film, formed from a precursor such as [2.2]paracyclophane, an alkyl- and/or halo-substituted derivative thereof, or an analogous compound of a p-xylene derivative.

    摘要翻译： 一种用于在基底上形成低介电常数聚合物膜的方法和装置，通过以有机溶液或纯液体的形式液体递送聚对二甲苯前体试剂，随后的纯液体或有机溶液闪蒸，热解“ 裂解“前体以形成反应性单体和/或反应性基团物质，以及单体和/或反应性基团物质的缩合和聚合，以在基底上形成低介电常数聚合物膜。 低介电常数聚合物膜可以包含由前体例如[2.2]对环烷烃，其烷基和/或卤素取代的衍生物或对二甲苯衍生物的类似化合物形成的对二甲苯膜。

    Composition and method for forming thin film ferrite layers on a substrate
    36.
    发明授权
    Composition and method for forming thin film ferrite layers on a substrate 失效
    在基板上形成薄膜铁氧体层的组合物和方法

    公开(公告)号：US6030454A

    公开(公告)日：2000-02-29

    申请号：US828404

    申请日：1997-03-28

    申请人： Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C16/40 ,  C30B25/02

    CPC分类号： C30B25/02 ,  C23C16/406 ,  C30B29/22

    摘要： A method of forming a thin film ferrite material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of the thin film ferrite material on the substrate. The invention also contemplates a device comprising a ferrite layer on a substrate, in which the ferrite layer is formed on the substrate by a process as described above.

    摘要翻译： 一种从相应的前体在衬底上形成薄膜铁氧体材料的方法，包括液体输送和闪蒸以产生前体蒸汽，并将前体蒸气输送到化学气相沉积反应器以形成薄膜铁素体 材料在基板上。 本发明还考虑了一种在衬底上包括铁氧体层的器件，其中铁氧体层通过如上所述的工艺形成在衬底上。

    Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
    37.
    发明授权
    Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition 失效
    用于液体输送化学气相沉积的烷烃和多胺溶剂组合物

    公开(公告)号：US5916359A

    公开(公告)日：1999-06-29

    申请号：US975372

    申请日：1997-11-20

    申请人： Thomas H. Baum ,  Gautam Bhandari

    发明人： Thomas H. Baum ,  Gautam Bhandari

    IPC分类号： C09K3/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/448

    CPC分类号： C23C16/409 ,  C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  C23C16/4481 ,  Y10S423/14

    摘要： A solvent composition useful for liquid delivery chemical vapor deposition of organometallic precursors such as .beta.-diketonate metal precursors. The solvent composition comprises a mixture of solvent species A, B and C in the proportion A:B:C wherein A is from about 3 to about 7 parts by volume, B is from about 2 to about 6 parts by volume, and C is from 0 to about 3 parts by volume, wherein A is a C.sub.6 -C.sub.8 alkane, B is a C.sub.8 -C.sub.12 alkane, and C is a glyme-based solvent (glyme, diglyme, tetraglyme, etc.) or a polyamine. The particular solvent composition including octane, decane and polyamine in an approximate 5:4:1 weight ratio is particularly usefully employed in the formation of SrBi.sub.2 Ta.sub.2 O.sub.9 films.

    摘要翻译： 用于液体输送化学气相沉积有机金属前体如β-二酮金属前体的溶剂组合物。 溶剂组合物包含A：B：C比例的溶剂A，B和C的混合物，其中A为约3至约7体积份，B为约2至约6体积份，C为 0〜约3体积份，其中A为C6-C8烷烃，B为C8-C12烷烃，C为甘醇二甲醚溶剂（甘醇二甲醚，二甘醇二甲醚，四甘醇二甲醚等）或多胺。 包含辛烷值，癸烷值和多胺重量比约5:4:1的特定溶剂组合物特别适用于形成SrBi2Ta2O9膜。