Superconducting device
    31.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号:US4888629A

    公开(公告)日:1989-12-19

    申请号:US201332

    申请日:1988-05-31

    IPC分类号: H01L39/22

    CPC分类号: H01L39/228

    摘要: Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.

    摘要翻译: 在用作沟道的半导体上形成超导电极。 控制电极通过与形成有超导电极的半导体侧相反的半导体侧的绝缘膜或p-n结配置。 在跨越半导体的超导电极之间流动的超导电流由施加到控制电极的电信号控制,从而增强电流增益。

    Method of manufacturing thin-film field-emission electron source
    33.
    发明授权
    Method of manufacturing thin-film field-emission electron source 失效
    制造薄膜场致发射电子源的方法

    公开(公告)号:US3998678A

    公开(公告)日:1976-12-21

    申请号:US453031

    申请日:1974-03-20

    IPC分类号: H01J9/02 C23F1/04 A47B88/00

    CPC分类号: H01J9/025 H01J2201/30457

    摘要: A method of manufacturing a thin-film field-emission electron source which is of a sandwich structure of a substrate - metallic film-insulating film - metallic film and which has at least one minute cavity and a field-emitter of, for example, a conical shape within the cavity, comprises the steps of (i) forming on a substrate a first layer of metallic film pattern for current supply, (ii) depositing a second layer film made of an electron emissive material onto the entire area of the substrate provided with the first layer, and thereafter subjecting the second layer film to a mesa etch by a photoetching process, to form a conical emitter on the first layer film, (iii) forming a third layer made of an insulating material, the third layer having a height substantially equal to the level of a tip portion of the emitter, (iv) forming a fourth layer of metallic film pattern as an accelerating electrode, and (v) etching the third layer, so as to expose the extremity of the emitter.According to the manufacturing method, a thin-film field-emission electron source can be readily produced merely by the combination between the standard evaporation techniques and etching techniques.

    摘要翻译: 一种制造薄膜场致发射电子源的方法,该薄膜场致发射电子源是基片 - 金属膜绝缘膜 - 金属膜的夹层结构,并且具有至少一分钟腔体和场致发射体,例如, 包括以下步骤:(i)在基板上形成用于电流供应的第一金属膜图案层,(ii)将由电子发射材料制成的第二层膜沉积到所提供的基板的整个区域上 并且然后通过光刻工艺对第二层膜进行台面蚀刻,以在第一层膜上形成锥形发射体,(iii)形成由绝缘材料制成的第三层,第三层具有 高度基本上等于发射体的尖端部分的高度,(iv)形成作为加速电极的金属膜图案的第四层,(v)蚀刻第三层,以暴露出发射极的末端。

    Superconducting device
    35.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号:US5272358A

    公开(公告)日:1993-12-21

    申请号:US796885

    申请日:1991-11-25

    IPC分类号: H01L39/22

    CPC分类号: H01L39/228

    摘要: In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.

    摘要翻译: 在超导装置中,通过设置在超导电极之间的控制电极来控制与半导体接触的两个超导电极之间流过的超导电流的值,在半导体内形成高的杂质浓度区域以便接触 与超导电极并延伸到控制电极的下端。

    Superconducting device
    36.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号:US5160983A

    公开(公告)日:1992-11-03

    申请号:US439809

    申请日:1989-11-21

    IPC分类号: H01L39/22

    CPC分类号: H01L39/228

    摘要: Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.

    摘要翻译: 在用作沟道的半导体上形成超导电极。 控制电极通过与形成有超导电极的半导体侧相反的半导体侧的绝缘膜或p-n结配置。 在跨越半导体的超导电极之间流动的超导电流由施加到控制电极的电信号控制,从而增强电流增益。

    Superconducting logic circuit and superconducting switching device
therefor
    40.
    发明授权
    Superconducting logic circuit and superconducting switching device therefor 失效
    超导逻辑电路及其超导开关器件

    公开(公告)号:US4555643A

    公开(公告)日:1985-11-26

    申请号:US391716

    申请日:1982-06-24

    IPC分类号: H03K17/92 H03K19/195

    摘要: A superconducting logic circuit including a first power source terminal connected with a current source; a second power source terminal connected with a current sink; a first superconducting switching device connected between said first power source terminal and ground; a second superconducting switching device connected between said second power source terminal and ground; first and second resistors connected with said first and second power source terminals, respectively; and third and fourth resistors connected with the control terminals of said first and second superconducting switching devices, respectively, wherein the other terminals of said first and second resistors are connected with each other to provide a logic output terminal, and wherein the other terminals of said third and fourth resistors are connected with each other to provide a logic input terminal.

    摘要翻译: 一种超导逻辑电路,包括与电流源连接的第一电源端子; 与电流接收器连接的第二电源端子; 连接在所述第一电源端子和地之间的第一超导开关装置; 连接在所述第二电源端子和地之间的第二超导开关装置; 分别与所述第一和第二电源端子连接的第一和第二电阻器; 以及分别与所述第一和第二超导开关装置的控制端子连接的第三和第四电阻器,其中所述第一和第二电阻器的其他端子彼此连接以提供逻辑输出端子,并且其中所述第一和第二超导开关装置的其它端子 第三和第四电阻器彼此连接以提供逻辑输入端子。