公开(公告)号：US09167837B2

公开(公告)日：2015-10-27

申请号：US11949438

申请日：2007-12-03

申请人： Laurence Trinnaman ,  Zhihua Liu ,  Linda Ann Psota-Kelty ,  Zhen Chen

发明人： Laurence Trinnaman ,  Zhihua Liu ,  Linda Ann Psota-Kelty ,  Zhen Chen

IPC分类号： A23L1/227 ,  A23L1/39

CPC分类号： A23L1/227 ,  A23L23/00 ,  A23L27/21

摘要： The invention relates to compositions and methods of using the flavor active peptides, Lys-Ile-His-Pro-Phe (SEQ ID NO:1), Gly-Pro-Phe-Pro-Ile (SEQ ID NO:2), and Lys-Lys-Tyr-Lys-Val-Pro-Gln (SEQ ID NO:3), to impart a bitter, salt, dairy or umami flavor to food or pharmaceutical products. In particular embodiments, the Lys-Lys-Tyr-Lys-Val-Pro-Gln (SEQ ID NO:3) peptide further imparts a vegetable, brothy, or bready flavor.

公开(公告)号：US08789438B2

公开(公告)日：2014-07-29

申请号：US13575624

申请日：2010-11-01

申请人： Yangzhi Chen ,  Zhen Chen ,  Jiang Ding

发明人： Yangzhi Chen ,  Zhen Chen ,  Jiang Ding

IPC分类号： F16H55/00 ,  F16H1/12 ,  F16H1/20 ,  B81B5/00 ,  F16H55/08 ,  F16H1/24 ,  F16H37/06

CPC分类号： F16H1/12 ,  B81B5/00 ,  B81B2201/037 ,  F16H1/24 ,  F16H37/065 ,  F16H55/0853 ,  Y10T74/1966 ,  Y10T74/19972

摘要： A space curve mesh driving pair and a polyhedral space curve mesh transmission are disclosed. Said space curve mesh driving pair consists of a driving wheel and a driven wheel. Axes of the driving wheel and the driven wheel are intersected at an angle of 0°˜180°, and power transmission is realized by continuous mesh between the driving tines and the driven tines; a number of driving tines are provided on said driving wheel, and a number of driven tines are provided on the driven wheel; the driving tines are uniformly arranged on an end face of a cylinder of the driving wheel, and the driven tines are uniformly arranged on the circumference of a cylindrical surface of the driven wheel. Said polyhedral space curve mesh transmission consists of an above-mentioned space curve mesh driving pair. Motion is input from an input end, and is passed through a number of pace curve mesh driving pairs to realize the speed change, then is output from one or more output ends. Wherein, the space curve mesh driving pair is the core of the transmission. The invention has the advantages of compact structure, small size, light weight, stable transmission and flexible operation, and can be widely used in micro-mechanism field.

摘要翻译： 公开了空间曲线网格驱动对和多面体空间曲线网格传输。 所述空间曲线网格驱动对由驱动轮和从动轮组成。 驱动轮和从动轮的轴线以0°〜180°的角度相交，通过驱动齿和从动齿之间的连续啮合实现动力传递; 在所述驱动轮上设置有多个行进齿，并且在所述从动轮上设置有多个从动齿; 驱动齿均匀地布置在驱动轮的气缸的端面上，并且从动齿均匀地布置在从动轮的圆柱形表面的圆周上。 所述多面体空间曲线网格传输由上述空间曲线网格驱动对组成。 运动是从输入端输入的，并通过多个速度曲线网格驱动对来实现速度变化，然后从一个或多个输出端输出。 其中，空间曲线网格驱动对是传输的核心。 本发明结构紧凑，体积小，重量轻，传动稳定，操作灵活，可广泛应用于微机械领域。

公开(公告)号：US08722475B2

公开(公告)日：2014-05-13

申请号：US12986123

申请日：2011-01-06

申请人： Zhen Chen ,  Yung Feng Lin

发明人： Zhen Chen ,  Yung Feng Lin

IPC分类号： H01L21/338

CPC分类号： H01L29/93 ,  H01L29/66181 ,  H01L29/94

摘要： A method for forming a variable capacitor includes providing a semiconductor substrate of a first conductivity type and forming an active region of a second conductivity type within the substrate. The method forms a first dielectric layer overlying the active region. The method provides a conductive gate layer over the first dielectric layer and selectively patterns the conductive gate layer to form a plurality of holes in the conductive gate layer. A perimeter of the holes and a spacing between a first and a second holes are selective to provide a high quality factor (Q) of the capacitor. The method implants impurities of the second conductivity type into the active region through the plurality of holes in the conductive layer. The method also includes providing a second dielectric layer and patterning the second dielectric layer to form contacts to the active region and the gate.

摘要翻译： 形成可变电容器的方法包括提供第一导电类型的半导体衬底，并在衬底内形成第二导电类型的有源区。 该方法形成覆盖有源区的第一介电层。 该方法在第一电介质层之上提供导电栅极层，并且选择性地图案化导电栅极层以在导电栅极层中形成多个孔。 孔的周长和第一孔和第二孔之间的间隔是选择性的，以提供电容器的高品质因数（Q）。 该方法将第二导电类型的杂质通过导电层中的多个孔埋入有源区。 该方法还包括提供第二电介质层和图案化第二电介质层以形成与有源区和栅极的接触。

公开(公告)号：US20130279506A1

公开(公告)日：2013-10-24

申请号：US13450749

申请日：2012-04-19

申请人： Zhen Chen ,  Delvan Ard ,  James Lee Lorimer, III ,  Matthew Knox

发明人： Zhen Chen ,  Delvan Ard ,  James Lee Lorimer, III ,  Matthew Knox

IPC分类号： H04L12/56

CPC分类号： H04L41/042 ,  H04L12/56 ,  H04L41/0695 ,  H04L61/2539

摘要： Methods and systems for routing application traffic to an operable system manager are provided. In particular, an arbiter application is provided to identify a currently active system manager. The arbiter application provides an address for the active system manager to a routing node. Applications send communications to the active system manager by associating such communications with a virtual system manager address. Such communications are delivered to the routing node, which associates the actual address for the currently active system manager with the communication. The communications are then delivered to the active system manager using the actual address.

摘要翻译： 提供了将应用流量路由到可操作的系统管理器的方法和系统。 特别地，提供仲裁器应用以识别当前活动的系统管理器。 仲裁器应用程序为活动系统管理器提供路由节点的地址。 应用程序通过将此类通信与虚拟系统管理器地址相关联将通信发送到活动系统管理器。 这样的通信被递送到路由节点，路由节点将当前活动的系统管理器的实际地址与通信相关联。 然后使用实际地址将通信传送到主动系统管理员。

公开(公告)号：US20130032836A1

公开(公告)日：2013-02-07

申请号：US13196828

申请日：2011-08-02

申请人： Zhen Chen ,  Yi Fu

发明人： Zhen Chen ,  Yi Fu

IPC分类号： H01L33/32 ,  H01L33/58

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/0655 ,  H01L2924/00 ,  H01L2924/00014

摘要： A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.

摘要翻译： 垂直GaN基蓝色LED具有包括多个导电中间层的n型层。 n型层包含多个周期。 n型层的每个周期包括氮化镓（GaN）子层和薄导电铝 - 氮化镓（AlGaN：Si）中间层。 在一个示例中，每个GaN子层具有基本上大于100nm且小于1000nm的厚度，并且每个AlGaN：Si中间层具有小于25nm的厚度。 整个n型层的厚度至少为2000nm。 AlGaN：Si中间层为GaN子层提供压缩应变，从而防止开裂。 在形成LED的外延层之后，将导电载体晶片结合到该结构上。 然后去除硅衬底。 添加电极，并且将结构单个化以形成成品的LED器件。 因为AlGaN：Si子层是导电的，所以整个n型层可以保留为最终的LED器件的一部分。

公开(公告)号：US08324692B2

公开(公告)日：2012-12-04

申请号：US12953426

申请日：2010-11-23

申请人： Zhen Chen ,  Yung Feng Lin ,  Lin Huang

发明人： Zhen Chen ,  Yung Feng Lin ,  Lin Huang

IPC分类号： H01L27/11

CPC分类号： H01L27/13 ,  H01F17/0006 ,  H01F2017/0046 ,  H01F2017/0073 ,  H01F2017/0086 ,  H01L23/5222 ,  H01L23/5227 ,  H01L23/53295 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating an integrated inductor device includes providing a silicon substrate and forming a thickness of an insulating layer overlying the silicon substrate. The insulating layer includes a dummy structure within a portion of the thickness. The method includes forming an inductor having a first portion and a second portion. The first portion includes a spiral coil of conductor lines. The method also includes exposing the dummy structure by forming an opening in the insulating layer and removing the dummy structure to form a cavity underlying the inductor to reduce a dielectric constant and to increase a Q value of the inductor. The method includes using aluminum or copper for the dummy structures. The method includes dry etching the insulator and wet etching the dummy structure. The method also includes forming the inductors using aluminum or copper.

摘要翻译： 制造集成电感器件的方法包括提供硅衬底并形成覆盖硅衬底的绝缘层的厚度。 绝缘层在厚度的一部分内包括虚拟结构。 该方法包括形成具有第一部分和第二部分的电感器。 第一部分包括导线的螺旋线圈。 该方法还包括通过在绝缘层中形成开口并去除虚拟结构以形成电感器下面的空腔来暴露虚拟结构，以降低介电常数并增加电感器的Q值。 该方法包括使用铝或铜作为虚拟结构。 该方法包括干法蚀刻绝缘体并湿式蚀刻虚拟结构。 该方法还包括使用铝或铜形成电感器。

公开(公告)号：US20110288167A1

公开(公告)日：2011-11-24

申请号：US13112180

申请日：2011-05-20

申请人： Chunshun Zhao ,  Zhanqi Niu ,  Zhen Chen ,  Haibo Guo

发明人： Chunshun Zhao ,  Zhanqi Niu ,  Zhen Chen ,  Haibo Guo

IPC分类号： A61K31/343

摘要： The present invention discloses a butylphthalide intravenous emulsion for intravenous injection or infusion, containing butylphthalide or derivatives thereof as an active ingredient in an amount of 0.01˜50 wt % and an excipient in an amount of 50˜99.99 wt %, based on the total weight of the emulsion.

摘要翻译： 本发明公开了一种用于静脉注射或输注的丁基苯酞地静滴乳剂，其含量为0.01〜50重量％的丁基苯酞或其衍生物作为活性成分，赋形剂的含量为总重量的50〜99.99重量％ 的乳液。

公开(公告)号：US20100111880A1

公开(公告)日：2010-05-06

申请号：US12261538

申请日：2008-10-30

申请人： Zhen Chen ,  Mark L. Dewis ,  Debra Merritt

发明人： Zhen Chen ,  Mark L. Dewis ,  Debra Merritt

IPC分类号： C07D327/06 ,  A61K47/22 ,  A61K8/18 ,  A61K8/49 ,  A61Q13/00 ,  A61Q11/00

CPC分类号： C07D327/06 ,  A23L27/2052 ,  A23L27/26 ,  A23L27/29

摘要： The present invention relates to novel 1,3-oxathiane compounds represented by Formula I: wherein R is selected from the group consisting of ethyl, butyl, propyl, and (methylthio)ethyl, and their uses to enhance a flavor or fragrance composition.

摘要翻译： 本发明涉及由式I表示的新的1,3-氧硫杂环己烷化合物及其用于增强风味或香料组合物的用途，其中R选自乙基，丁基，丙基和（甲硫基）乙基。

公开(公告)号：US20090302308A1

公开(公告)日：2009-12-10

申请号：US12442180

申请日：2006-09-22

申请人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

发明人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L33/305 ,  H01L33/32 ,  H01S5/3412 ,  H01S5/34333

摘要： A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x

摘要翻译： 白色发光二极管包括n型半导体层，在n型半导体层上形成的一个或多个量子阱结构，形成在量子阱结构上的p型半导体层，形成在p型半导体层上的第一电极， 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层，In y Ga 1-y N势垒层（x> 0.3或x = 0.3）和In x Ga 1-z N量子点，其中x

公开(公告)号：US20090281177A1

公开(公告)日：2009-11-12

申请号：US12086665

申请日：2006-12-15

申请人： Chunshun Zhao ,  Zhanqi Niu ,  Zhen Chen ,  Haibo Guo

发明人： Chunshun Zhao ,  Zhanqi Niu ,  Zhen Chen ,  Haibo Guo

IPC分类号： A61K31/343

CPC分类号： A61K9/107 ,  A61K9/0019 ,  A61K31/365

摘要： The present invention discloses a butylphthalide intravenous emulsion for intravenous injection or infusion, containing butylphthalide or derivatives thereof as an active ingredient in an amount of 0.01˜50 wt % and an excipient in an amount of 50˜99.99 wt %, based on the total weight of the emulsion.

摘要翻译： 本发明公开了一种用于静脉注射或输注的丁基苯酞地静滴乳剂，其含量为0.01〜50重量％的丁基苯酞或其衍生物作为活性成分，基于总重量为50〜99.99重量％的赋形剂 的乳液。