公开(公告)号：US20060175628A1

公开(公告)日：2006-08-10

申请号：US11378963

申请日：2006-03-17

申请人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

发明人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007

摘要： A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.

摘要翻译： 在已经掺杂有p型杂质的硅衬底上建立发光二极管以具有足够的导电性以提供通过LED的电流路径的一部分。 p型硅衬底在其上外延生长n型AlInGaN的缓冲区。 在缓冲区域外延生长的是LED的主要半导体区域，其包括n型GaN的下约束层，用于产生光的有源层和p型GaN的上部约束层。 在缓冲区和主半导体区域的生长过程中，发生镓和其他III族元素从缓冲区到p型硅衬底的热扩散，随之产生p型低电阻 区域。 在p型硅衬底和n型缓冲区之间的异质结上形成界面电平。 接口电平加快了从衬底到缓冲区域的载流子传输，有助于降低LED的驱动电压要求。

公开(公告)号：US20060138457A1

公开(公告)日：2006-06-29

申请号：US11357567

申请日：2006-02-17

申请人： Koji Otsuka ,  Nobuo Kaneko

发明人： Koji Otsuka ,  Nobuo Kaneko

IPC分类号： H01L29/739 ,  H01L31/0328 ,  H01L29/12 ,  H01L29/732

CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003

摘要： A high electron mobility transistor is disclosed which has a double-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. The main semiconductor region, buffer region, and part of the substrate taper as they extend away from the rest of the substrate, providing slanting side surfaces. An electroconductive antileakage overlay covers these side surfaces via an electrically insulating overlay. Electrically coupled to the silicon substrate via a contact electrode, the antileakage overlay serves for reduction of current leakage along the side surfaces.

公开(公告)号：US20050110043A1

公开(公告)日：2005-05-26

申请号：US10988889

申请日：2004-11-15

申请人： Koji Otsuka ,  Masataka Yanagihara ,  Nobuo Kaneko

发明人： Koji Otsuka ,  Masataka Yanagihara ,  Nobuo Kaneko

IPC分类号： H01L29/26 ,  H01L21/205 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812 ,  H01L29/739

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/812

摘要： A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion coefficient therebetween. Electrodes are formed on the nitride semiconductor layer or layers in order to provide HEMTs or MESFETs. The buffer region is a lamination of a multiplicity of buffer layers each comprising a first, a second, and a third buffer sublayer of nitride semiconductors, in that order from the silicon substrate proper toward the nitride semiconductor region. The three sublayers of each buffer layer contain aluminum in varying proportions including zero. The aluminum proportion of the third buffer sublayer is either zero or intermediate that of the first buffer sublayer and that of the second. The low aluminum proportion of the third buffer sublayer serves to prevent two-dimensional electron gas from generating in the buffer region and hence to make this region sufficiently high in resistance to inhibit current leakage from the HEMTs or MESFETs.

摘要翻译： 这种衬底系统具有介于硅衬底本体和氮化物半导体区域之间的缓冲区域，以补偿它们之间的线膨胀系数差。 为了提供HEMT或MESFET，在氮化物半导体层上形成电极。 缓冲区域是从硅衬底本身朝向氮化物半导体区域的顺序，分别包括氮化物半导体的第一，第二和第三缓冲子层的多个缓冲层的叠层。 每个缓冲层的三个子层含有不同比例的铝，包括零。 第三缓冲器子层的铝比例为零或与第一缓冲子层的第二缓冲层的铝比例为中等。 第三缓冲层的低铝比例用于防止在缓冲区域中产生二维电子气，从而使该区域具有足够高的电阻，以防止来自HEMT或MESFET的电流泄漏。

公开(公告)号：US20050110029A1

公开(公告)日：2005-05-26

申请号：US10994922

申请日：2004-11-22

申请人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

发明人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/14

CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/04

摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

摘要翻译： 具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩散层。 电流扩展层是交替需要次数布置的第一和第二子层的叠层。 由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。 电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。 金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

公开(公告)号：US09913020B2

公开(公告)日：2018-03-06

申请号：US15209053

申请日：2016-07-13

申请人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

发明人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

IPC分类号： G10K11/16 ,  H04R1/10 ,  H04R3/02

CPC分类号： H04R1/1066 ,  G10K11/16 ,  G10K2210/1081 ,  H04R1/1075 ,  H04R1/1083 ,  H04R3/02 ,  H04R2460/01 ,  H04R2460/11

摘要： A noise-cancelling headphone is provided that prevents degradation in the sound quality of the sound output from the driver unit caused by the sounds leaking through the vent hole for adjusting the sound quality. The noise-cancelling headphone includes a housing unit having an interior and an exterior, a driver unit attached to the housing unit, and a microphone collecting sound at the exterior of the housing unit. The housing unit includes an accommodating portion accommodating the microphone and a vent hole establishing communication between an air chamber behind the driver unit and the exterior of the housing unit. The housing unit is constructed such that emitted sounds from the vent hole are prevented from being collected by the microphone.

公开(公告)号：US09098008B2

公开(公告)日：2015-08-04

申请号：US13463080

申请日：2012-05-03

申请人： Kazuki Inami ,  Yasunori Momomura ,  Yuki Nagamori ,  Koji Otsuka ,  Masafumi Kudo

发明人： Kazuki Inami ,  Yasunori Momomura ,  Yuki Nagamori ,  Koji Otsuka ,  Masafumi Kudo

IPC分类号： G03G21/20 ,  F24F7/007 ,  F24F7/06 ,  G03G15/02 ,  F24F7/00

CPC分类号： G03G15/0291 ,  F24F7/007 ,  F24F7/06 ,  F24F2007/001 ,  G03G21/206

摘要： A blowing device includes a blower and an air duct including an inlet, an outlet, and a body. The outlet faces a longitudinal portion of an oblong target structure toward which air is blown. The outlet allows air to be discharged in a direction that is substantially perpendicular to a longitudinal direction in which the longitudinal portion extends. The inlet has an opening and the outlet has an oblong opening, and the opening of the inlet and the opening of the outlet having different shapes. The body has a passage space formed therein. Plural restraining portions that restrain airflow are disposed at different positions in the passage space in the direction of airflow. A most downstream one of the restraining portions is formed so as to at least partially cover the passage space with an air-permeable member having plural air passage portions that are distributed the air-permeable member.

摘要翻译： 吹风装置包括鼓风机和包括入口，出口和主体的空气管道。 出口面向被吹送空气的长方形目标结构的纵向部分。 出口允许空气沿与纵向部分延伸的纵向方向基本垂直的方向排出。 入口具有开口，出口具有长方形的开口，入口的开口和出口的开口具有不同的形状。 主体具有形成在其中的通道空间。 限制气流的多个限制部分沿通气方向设置在通道空间中的不同位置。 形成限制部分中最下游的一个形成为至少部分地覆盖通道空间，其中透气部件具有分配透气部件的多个空气通道部分。

公开(公告)号：US08089078B2

公开(公告)日：2012-01-03

申请号：US12412902

申请日：2009-03-27

申请人： Hitoshi Murofushi ,  Koji Otsuka ,  Nobuhisa Sugimori ,  Hideyuki Watanabe

发明人： Hitoshi Murofushi ,  Koji Otsuka ,  Nobuhisa Sugimori ,  Hideyuki Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/05 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H05B33/089 ,  H01L2924/00

摘要： A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source.

摘要翻译： 发光器件包括：第一半导体区域; 设置在所述第一半导体区域中的第二半导体区域和第三半导体区域; 第一半导体发光元件，其第一电极电连接到第二半导体区域的主表面; 第二半导体发光元件，其第三电极与第三半导体区域的主表面电连接; 以及将第一半导体发光元件的第二电极和第三半导体区域电连接并且通过第三半导体区域电连接第二电极和第三电极的导体。 在发光装置中，半导体发光元件串联连接，并直接与电源连接。

公开(公告)号：US20100224207A1

公开(公告)日：2010-09-09

申请号：US12086388

申请日：2008-03-14

申请人： Koji Otsuka ,  Koji Shirakawa

发明人： Koji Otsuka ,  Koji Shirakawa

IPC分类号： A45D2/48

CPC分类号： A45D2/48

摘要： [Subject] To provide an eyelash curler capable of curling the entire eyelashes easily and beautifully in an ideally radial state by using the eyelash curler once.[Solving Means] An eyelash curler according to the present invention is provided with a pair of supporting columns 10, a movable member 14 in a curved shape capable of moving in the up and down direction along supporting column upper parts 10a in a linear shape of a pair of the supporting columns, an elastic body 16 attached to the movable member, a fixing member 12 in a curved shape fixed to the upper parts 10a of a pair of the supporting column and handles 18 and 22 for moving the movable member 14 in the up and down direction, a curvature radius R3 of a lower edge 12a of the fixing member 12 (excluding the vicinities of both ends) in a front view is set to 16.5 to 22.5 mm, and a curvature radius R1 of the lower edge 12a of the fixing member 12 (excluding the vicinities of the both ends) in a plan view is set to 18.5 to 24.5 mm.

摘要翻译： [主题]提供一种能够通过使用睫毛夹卷发器，在理想的径向状态下容易且美观地卷曲整个睫毛的睫毛夹。 具体实施方式根据本发明的睫毛夹具设置有一对支柱10，能够沿着支撑柱上部10a沿上下方向沿着上下方向移动的可动构件14，其形状为直线状 一对支撑柱，附接到可动构件的弹性体16，固定在一对支柱的上部10a上的弯曲形状的固定构件12和用于使可动构件14移动的手柄18和22 前后方向上的固定构件12的下边缘12a的曲率半径R3（不包括两端附近）设定为16.5〜22.5mm，下边缘12a的曲率半径R1 （不包括两端附近）在平面图中设定为18.5〜24.5mm。

公开(公告)号：US07675070B2

公开(公告)日：2010-03-09

申请号：US11619079

申请日：2007-01-02

申请人： Hidekazu Aoyagi ,  Koji Otsuka

发明人： Hidekazu Aoyagi ,  Koji Otsuka

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.

摘要翻译： LED具有通过导电反射层在基板上形成的发光半导体区域。 光产生半导体区域具有夹在一对相反导电类型的包层之间的活性层，用于产生光。 为了与发光半导体区域良好的欧姆接触，与非合金银相比，反射率没有任何明显的降低，反射层由含有主要比例的银和至少一种铜，金的银基合金制成 ，钯，钕，硅，铱，镍，钨，锌，镓，钛，镁，钇，铟和锡。

公开(公告)号：US20090233192A1

公开(公告)日：2009-09-17

申请号：US12475878

申请日：2009-06-01

申请人： Koji Otsuka ,  Kenji Okamura

发明人： Koji Otsuka ,  Kenji Okamura

IPC分类号： G03F1/00 ,  C23C14/00

CPC分类号： G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

摘要： The invention is to provide a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate so as to have a surface excellent in flatness. The invention relates to a method for finishing a pre-polished glass substrate surface using any one of processing methods selected from the group consisting of ion beam etching, gas cluster ion beam etching and plasma etching, the glass substrate being made of quartz glass that contains a dopant and comprises SiO2 as a main component, and the method for finishing a pre-polished glass substrate surface including: a step of measuring flatness of the glass substrate surface using a shape measurement unit that comprises: a low-coherent light source whose outgoing light flux has a coherence length shorter than twice an optical distance between front and back surfaces of the glass substrate; a path match route part that divides the outgoing light flux from the low-coherent light source into two light fluxes, causes one of the two light fluxes to make a detour by a given optical path length relative to the other light flux, and then recombines the light fluxes into a single light flux and outputs it; and an interference optical system that acquires an interference fringe which carries wave surface information of the glass substrate surface by radiating an outgoing light flux from the low-coherent light source onto a reference surface and the glass substrate surface held on a measurement optical axis and making lights returning from the reference surface and the glass substrate surface interfere with each other; and a step of measuring a concentration distribution of the dopant contained in the glass substrate, wherein processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness of the glass substrate and the step of measuring a concentration distribution of the dopant contained in the glass substrate, and the finishing is carried out while keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate surface at from 30 to 89°.