SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE
    33.
    发明申请
    SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE 有权
    基板接合方法和三维半导体器件

    公开(公告)号:US20100040893A1

    公开(公告)日:2010-02-18

    申请号:US12540764

    申请日:2009-08-13

    IPC分类号: B32B37/00 B32B9/04

    摘要: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

    摘要翻译: 将具有接合面的一对基板通过在基板的接合面之间插入接合层前体涂层并加热前体涂层而形成接合层而接合在一起。 在接合步骤之前,接合表面上的基底设置有透气层。 即使当热固化时将产生显着体积的气体的材料用作前体涂层时,可以通过坚固的粘结将衬底接合,而不会由气体逸出造成剥离问题。

    Substrate joining method and 3-D semiconductor device
    34.
    发明授权
    Substrate joining method and 3-D semiconductor device 有权
    基板接合方法和3-D半导体器件

    公开(公告)号:US08257528B2

    公开(公告)日:2012-09-04

    申请号:US12540764

    申请日:2009-08-13

    摘要: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

    摘要翻译: 将具有接合面的一对基板通过在基板的接合面之间插入接合层前体涂层并加热前体涂层而形成接合层而接合在一起。 在接合步骤之前,接合表面上的基底设置有透气层。 即使当热固化时将产生显着体积的气体的材料用作前体涂层时,可以通过坚固的粘结将衬底接合,而不会由气体逸出造成剥离问题。

    Positive resist material and pattern formation method using the same
    36.
    发明授权
    Positive resist material and pattern formation method using the same 有权
    正抗蚀剂材料和使用其的图案形成方法

    公开(公告)号:US07651829B2

    公开(公告)日:2010-01-26

    申请号:US10854568

    申请日:2004-05-26

    摘要: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.

    摘要翻译: 本发明提供了正电阻材料,特别是具有比常规正性抗蚀剂材料更高的灵敏度,更高分辨率,更高的曝光宽容度和更好的工艺适应性的化学放大的正性抗蚀剂材料,并且在曝光之后提供良好的图案轮廓,特别是具有减小的线边缘粗糙度 并具有优异的耐蚀刻性。 这些材料可以优选含有有机溶剂和酸产生剂,更优选含有溶解抑制剂或碱性化合物和/或表面活性剂。 提供一种正性抗蚀剂材料,其包含包含选自由下式(1)表示的单体单元(A),单体单元(B)和单体单元(C))组成的组中的至少一种单体单元的聚合物; 玻璃化转变温度(Tg)为100℃以上。

    Antireflective film material, and antireflective film and pattern formation method using the same
    38.
    发明授权
    Antireflective film material, and antireflective film and pattern formation method using the same 有权
    防反射膜材料,以及使用其的抗反射膜和图案形成方法

    公开(公告)号:US07202013B2

    公开(公告)日:2007-04-10

    申请号:US10858997

    申请日:2004-06-02

    IPC分类号: G03C1/73

    摘要: It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.The present invention provides an antireflective film material comprising a polymer (A) comprising copolymerized repeating units expressed by the Formula (1) and/or the Formula (2), an organic solvent (B), an acid generator (C) and an optional crosslinking agent (D)

    摘要翻译: 本发明的目的是提供一种抗蚀剂材料,该防反射膜相对于抗蚀剂具有高蚀刻选择性,即具有比抗蚀剂更快的蚀刻速度,用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上,使用该抗反射膜作为基板处理的硬掩模的图案形成方法。

    Antireflective film material, and antireflective film and pattern formation method using the same
    39.
    发明授权
    Antireflective film material, and antireflective film and pattern formation method using the same 有权
    防反射膜材料,以及使用其的抗反射膜和图案形成方法

    公开(公告)号:US07303785B2

    公开(公告)日:2007-12-04

    申请号:US10859531

    申请日:2004-06-02

    IPC分类号: B05D3/02 C08G77/16

    摘要: It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si—OH and/or Si—OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).

    摘要翻译: 本发明的目的是提供一种抗蚀剂材料,该防反射膜相对于抗蚀剂具有高蚀刻选择性,即具有比抗蚀剂更快的蚀刻速度,用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上,使用该抗反射膜作为基板处理的硬掩模的图案形成方法。 本发明提供一种防止反射的硅树脂,其包含含有碳 - 氧单键和/或碳 - 氧双键的有机基团; 光吸收组; 以及其末端或末端为Si-OH和/或Si-OR的硅原子。 还提供一种抗反射膜材料,其包含用于防止反射膜的有机硅树脂(A),有机溶剂(B)和酸产生剂(C)。