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246 条记录 (耗时 0.032 秒)

    Semiconductor device comprising porous film
    31.
    发明授权
    Semiconductor device comprising porous film 失效
    包括多孔膜的半导体器件

    公开(公告)号：US07405459B2

    公开(公告)日：2008-07-29

    申请号：US11652297

    申请日：2007-01-11

    申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

    发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

    IPC分类号： H01L23/00

    CPC分类号： H01L21/02126 ,  C01B39/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

    摘要翻译： 本发明提供一种沸石溶胶，其可以通过通常的半导体工艺中使用的方法来形成多孔膜，该多孔膜可以被薄化到预期的厚度，其具有优异的介电性能，粘附性，膜稠度和机械强度，并且可以 容易变薄; 用于成膜的组合物; 多孔膜及其形成方法; 以及内部含有该多孔膜的高性能，高可靠性的半导体装置。 更具体地说，通过水解和分解由以下通式表示的硅烷化合物制备沸石溶胶：Si（OR 1）4（其中R 1， SUP>表示具有1至4个碳的直链或支链烷基，当存在多于一个R 1时，R 1可以是独立的，并且 在结构导向剂和碱性催化剂的存在下在用于形成多孔膜的常规涂布溶液中相同或不同） 然后在75℃以下的温度下加热硅烷化合物。 使用含有该沸石溶胶的多孔膜形成用组合物。

    Process for preparing a dispersion liquid of zeolite fine particles
    33.
    发明授权
    Process for preparing a dispersion liquid of zeolite fine particles 有权
    制备沸石微粒分散液的方法

    公开(公告)号：US07923522B2

    公开(公告)日：2011-04-12

    申请号：US12060291

    申请日：2008-04-01

    申请人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

    发明人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

    IPC分类号： C08G77/08

    CPC分类号： H01L21/31695 ,  C01B39/04 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/127 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/249953

    摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.

    摘要翻译： 本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。 制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤 与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。 通过该方法获得的沸石细颗粒的分散液。

    Process for Preparing a Zeolite-Containing Film
    34.
    发明申请
    Process for Preparing a Zeolite-Containing Film 审中-公开
    制备含沸石膜的方法

    公开(公告)号：US20080248328A1

    公开(公告)日：2008-10-09

    申请号：US12060480

    申请日：2008-04-01

    申请人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa

    发明人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa

    IPC分类号： B32B9/00 ,  B05D3/02 ,  B05D5/12

    CPC分类号： H01L21/31695 ,  C01B33/141 ,  C01B33/145 ,  C01B39/04 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/127 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337

    摘要： The invention provides a preparation process of a zeolite-containing film which can raise a zeolite component therein, control the physical properties of the surface, and provide a highly smooth film. The process for preparing a zeolite-containing film has a step of forming a precursor film containing an amorphous silicon oxide portion and a zeolite-like recurring portion by using a material having an amorphous silicon oxide portion and a material having a zeolite-like recurring portion; and a dry gel conversion step of heating the precursor film in the presence of water vapor in order to grow the zeolite-like recurring portion. In this process, the material having an amorphous silicon oxide portion and/or the material having a zeolite-like recurring portion contain(s) a silicon atom bonded to the carbon atom of an organic group containing at least one carbon group.

    摘要翻译： 本发明提供了一种含沸石的膜的制备方法，其可以在其中提高沸石组分，控制表面的物理性能，并提供高度光滑的膜。 制备含沸石的膜的方法具有通过使用具有非晶氧化硅部分的材料和具有沸石状重复部分的材料形成含有非晶氧化硅部分和沸石状重复部分的前体膜的步骤 ; 以及干燥凝胶转化步骤，在水蒸气存在下加热前体膜，以生长沸石状重复部分。 在该方法中，具有无定形氧化硅部分的材料和/或具有沸石状重复部分的材料含有与含有至少一个碳原子的有机基团的碳原子键合的硅原子。

    Pattern formation method and method for forming semiconductor device
    36.
    发明申请
    Pattern formation method and method for forming semiconductor device 失效
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号：US20080045005A1

    公开(公告)日：2008-02-21

    申请号：US11907018

    申请日：2007-10-09

    申请人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

    发明人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

    IPC分类号： H01L21/31 ,  H01L21/4763

    CPC分类号： H01L21/76801 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76817

    摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译： 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    Pattern formation method and method for forming semiconductor device
    40.
    发明授权
    Pattern formation method and method for forming semiconductor device 失效
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号：US07563709B2

    公开(公告)日：2009-07-21

    申请号：US11907018

    申请日：2007-10-09

    申请人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

    发明人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76801 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76817

    摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译： 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。