公开(公告)号：US07704893B2

公开(公告)日：2010-04-27

申请号：US10568461

申请日：2004-08-12

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

IPC分类号： H01L21/31

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。 本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

公开(公告)号：US20090268076A1

公开(公告)日：2009-10-29

申请号：US12429505

申请日：2009-04-24

申请人： Kohei Kawamura ,  Toshiyuki Noguchi

发明人： Kohei Kawamura ,  Toshiyuki Noguchi

IPC分类号： H04N5/222

CPC分类号： H04N5/23293 ,  H04N1/00408 ,  H04N1/0044 ,  H04N1/00453 ,  H04N1/00469 ,  H04N1/3875 ,  H04N2101/00

摘要： An image taking apparatus is configured to obtain image data by taking an image of an object, recording the image data on a recording medium, and reproducing the image data recorded on the recording medium to display the image. The image taking apparatus includes a scale-up display unit configured to display a partial area of the image in an enlarged scale, a setting unit configured to selectively set a flag indicating a rating for the partial area displayed in the enlarged scale, and a storing unit configured to store, on the recording medium, the flag set for the partial area and position information representing a position of the partial area in relation to the image data.

摘要翻译： 图像摄取装置被配置为通过拍摄对象的图像，将图像数据记录在记录介质上并再现记录在记录介质上的图像数据来显示图像来获得图像数据。 图像摄取装置包括：放大显示单元，被配置为以放大比例显示图像的局部区域;设置单元，被配置为选择性地设置指示放大显示的部分区域的评级的标志，以及存储 被配置为在所述记录介质上存储为所述部分区域设置的标志以及表示所述部分区域相对于所述图像数据的位置的位置信息。

公开(公告)号：US20090029066A1

公开(公告)日：2009-01-29

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US20090026588A1

公开(公告)日：2009-01-29

申请号：US12005683

申请日：2007-12-28

申请人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： C23C16/45574 ,  C23C16/36 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3148 ,  H01L21/3185

摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a·2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

摘要翻译： 一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。 用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a为计数数，b为满足式“b = 2×2a “），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

公开(公告)号：US20070155901A1

公开(公告)日：2007-07-05

申请号：US10583519

申请日：2004-12-24

申请人： Kohei Kawamura ,  Sohei Nishida ,  Minoru Kuroda ,  Toshiaki Ebisu ,  Masahiko Mihoichi

发明人： Kohei Kawamura ,  Sohei Nishida ,  Minoru Kuroda ,  Toshiaki Ebisu ,  Masahiko Mihoichi

IPC分类号： C08F8/00

CPC分类号： D01F6/38

摘要： An acrylic shrinkable fiber that can be dyed at a low temperature, and has a high shrinkage percentage even after drying is provided. A dyeable acrylic shrinkable fiber comprising 50 to 99 parts by weight of a polymer (A) comprising 80 to 97 wt % of acrylonitrile, 0 to 2 wt % of a sulfonic acid group-containing monomer and 3 to 20 wt % of a monomer copolymerizable with the monomers; and 1 to 50 parts by weight of a polymer (B) comprising 0 to 89 wt % of acrylonitrile, 1 to 40 wt % of a sulfonic acid group-containing monomer and 10 to 99 wt % of a monomer copolymerizable with the monomers, wherein the polymers (A) and (B) are 100 parts by weight in total is provided.

摘要翻译： 提供可以在低温下染色并且甚至在干燥后具有高收缩率的丙烯酸收缩纤维。 一种可染色的丙烯酸类收缩纤维，其包含50至99重量份的包含80至97重量％的丙烯腈，0至2重量％的含磺酸基的单体和3至20重量％的可共聚的单体的聚合物（A） 与单体; 和1至50重量份的包含0至89重量％的丙烯腈，1至40重量％的含磺酸基单体和10至99重量％的可与单体共聚的单体的聚合物（B），其中 聚合物（A）和（B）总共为100重量份。

公开(公告)号：US20070098982A1

公开(公告)日：2007-05-03

申请号：US10583182

申请日：2004-12-24

申请人： Sohei Nishida ,  Kohei Kawamura ,  Minoru Kuroda ,  Masahiko Mihoichi

发明人： Sohei Nishida ,  Kohei Kawamura ,  Minoru Kuroda ,  Masahiko Mihoichi

IPC分类号： D02G3/00

CPC分类号： D01F6/48 ,  D01F6/54 ,  Y10T428/2904 ,  Y10T428/2913 ,  Y10T428/2929

摘要： An object of the present invention is to provide a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing. By spinning an incompatible spinning solution, the above object can be achieved, and a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing can be provided.

摘要翻译： 本发明的目的是提供一种可染色的丙烯酸收缩纤维，其在染色时仅稍微收缩并且即使在染色后也具有高收缩率。 通过旋转不相容的纺丝溶液，可以实现上述目的，并且可以提供染色时仅稍微收缩并且即使在染色后也具有高收缩率的可染色的丙烯酸收缩纤维。

公开(公告)号：US20060251828A1

公开(公告)日：2006-11-09

申请号：US10549859

申请日：2004-03-24

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Akira Asano ,  Yasuhiro Terai ,  Kenichi Nishizawa

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Akira Asano ,  Yasuhiro Terai ,  Kenichi Nishizawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film. Preferably, the process pressure is 19.95 Pa or below. Under such process conditions for depositing a fluorine-containing carbon film by using the plasma, the source gas, such as C5F8 gas, is decomposed properly to form a structure of long CF chains. A interlayer insulation film thus formed has a small relative dielectric constant and permits only a low leakage current.

摘要翻译： 用于执行等离子体辅助沉积方法的等离子体辅助沉积系统具有限定真空室并具有敞开的上端的处理容器，覆盖处理容器的敞开的上端的电介质构件和放置在 电介质构件的上表面。 同轴波导的一端连接到平坦天线构件的上表面，另一端连接到微波发生器。 扁平天线构件设置有多个长度对应于布置在同心圆上的微波的一半波长的槽。 例如，圆形极化微波从狭缝辐射到处理空间中以产生源气体等离子体。 等离子体中的平均电子速度的电子温度为3eV以下，等离子体中的电子密度为每立方厘米以上5×10 11电子。 等离子体用于沉积含氟碳膜。 优选地，工艺压力为19.95Pa或更低。 在通过使用等离子体沉积含氟碳膜的这种工艺条件下，诸如C 5 F 8气体的源气体被适当地分解以形成结构 的长CF链。 这样形成的层间绝缘膜具有小的相对介电常数，并且仅允许低的漏电流。

公开(公告)号：US20060027167A1

公开(公告)日：2006-02-09

申请号：US11232943

申请日：2005-09-23

申请人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

IPC分类号： C23C16/00

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

摘要翻译： 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：US5958258A

公开(公告)日：1999-09-28

申请号：US98985

申请日：1998-06-17

申请人： Hiroyuki Ishihara ,  Kohei Kawamura

发明人： Hiroyuki Ishihara ,  Kohei Kawamura

IPC分类号： G01N21/68 ,  H01J37/32 ,  H01L21/66 ,  G01N21/00

CPC分类号： B24B37/013 ,  G01N21/68 ,  H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： A susceptor on which a wafer is placed, and an upper electrode are arranged in the processing chamber of an etching apparatus to oppose each other. An optical transmission window is disposed in the side wall of the processing chamber. The upper electrode and the susceptor are supplied with RF powers from a second RF power supply and a first RF power supply, respectively, to excite a plasma in the processing chamber. Emission of the plasma is detected by an optical detector through the optical transmission window, and data is sampled. In a CPU, the sampling data is subjected to fitting based on the Weibull distribution function, thus obtaining an approximate equation, and furthermore the differential equation of the approximate equation is obtained. The virtual end point of etching is expected from the approximate equation and differential equation.

摘要翻译： 在其上放置晶片的感受体和上电极布置在蚀刻装置的处理室中以彼此相对。 光传输窗设置在处理室的侧壁中。 向上电极和基座分别提供来自第二RF电源和第一RF电源的RF功率，以激发处理室中的等离子体。 通过光传输窗口通过光学检测器检测等离子体的发射，并对数据进行采样。 在CPU中，根据Weibull分布函数对采样数据进行拟合，得到近似方程，得到近似方程的微分方程。 从近似方程和微分方程预期蚀刻的虚拟终点。

公开(公告)号：US5522934A

公开(公告)日：1996-06-04

申请号：US428363

申请日：1995-04-25

申请人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

摘要翻译： 一种等离子体处理装置，包括：用于将处理容器内要被处理的目标表面支撑待加工的目标物体的基座，用于将目标物体的处理气体供给到处理容器中的多个处理气体供给喷嘴， RF线圈，用于在处理容器中产生电磁波，以产生处理气体的等离子体。 供给喷嘴具有在处理容器中与目标物体的目标表面大致垂直的方向上形成有多个等级的处理气体注入孔，位于上层的气体注入孔更靠近目标物的中心 表面比位于较低水平的气体注入孔。