公开(公告)号：US06841797B2

公开(公告)日：2005-01-11

申请号：US10338043

申请日：2003-01-08

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/36

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US06399960B1

公开(公告)日：2002-06-04

申请号：US09353370

申请日：1999-07-14

申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC分类号： H01L3300

CPC分类号： H01L27/1237 ,  G02F1/13454 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78645

摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.

摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。

公开(公告)号：US07868328B2

公开(公告)日：2011-01-11

申请号：US12362462

申请日：2009-01-29

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L24/32 ,  H01L24/73 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014

摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.

摘要翻译： 本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。 本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。 此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。 根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

公开(公告)号：US07785947B2

公开(公告)日：2010-08-31

申请号：US11410188

申请日：2006-04-25

申请人： Atsuo Isobe ,  Satoshi Murakami ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Satoshi Murakami ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L27/1266 ,  H01L27/1248 ,  H01L27/1255

摘要： In order to manufacture a highly reliable and compact TFT, it is an object of the present invention to provide a method for manufacturing a semiconductor device for forming a gate electrode, a source wiring and a drain wiring with high reliability, and a semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film is formed over a substrate having an insulated surface, a gate insulating film is formed over the semiconductor film, a gate electrode is formed over the gate insulating film, and a nitride film is formed over the surface of the gate electrode by nitriding the surface of the gate electrode by using high-density plasma.

摘要翻译： 为了制造高度可靠且紧凑的TFT，本发明的目的是提供一种用于制造用于形成具有高可靠性的栅电极，源极布线和漏极布线的半导体器件的方法和半导体器件。 在半导体器件的制造方法中，在具有绝缘面的基板上形成半导体膜，在半导体膜上形成栅极绝缘膜，在栅极绝缘膜上形成栅电极，形成氮化膜 通过使用高密度等离子体氮化栅电极的表面，在栅电极的表面上。

公开(公告)号：US07745293B2

公开(公告)日：2010-06-29

申请号：US11148289

申请日：2005-06-09

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/13 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78624

摘要： It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled.

摘要翻译： 本发明的目的是制造具有所需性能的薄膜晶体管，而不会使步骤和装置复杂化。 本发明的另一个目的是提供一种以更低的成本制造具有高可靠性和更好的电气特性并以较高产量获得的半导体器件的技术。 在本发明中，在薄膜晶体管中由栅极电极层覆盖的半导体层的源区域侧或漏极区侧形成有轻掺杂杂质区。 使用栅极电极层作为掩模将半导体层以其对面的方式对角地掺杂以形成轻掺杂杂质区域。 因此，可以精细地控制薄膜晶体管的性质。

公开(公告)号：US07736964B2

公开(公告)日：2010-06-15

申请号：US11274904

申请日：2005-11-16

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US07582162B2

公开(公告)日：2009-09-01

申请号：US11600833

申请日：2006-11-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： C30B11/00 ,  C30B15/26 ,  H01L21/335

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07410839B2

公开(公告)日：2008-08-12

申请号：US11410071

申请日：2006-04-25

申请人： Atsuo Isobe ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/4908

摘要： The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes high-speed operation and high-performance of the semiconductor device and a manufacturing method thereof. Further in addition, it is an object of the present invention to provide a manufacturing method in which a manufacturing process is simplified. The semiconductor device of the present invention has an island-shaped semiconductor film formed over a substrate having an insulating surface and a gate electrode formed over the island-shaped semiconductor film, in which the gate electrode is oxidized its surface by high-density plasma to be slimmed and the substantial length of a channel is shortened.

摘要翻译： 本发明提供了一种薄膜晶体管，其中缩短了通道的相当长度以使半导体器件小型化及其制造方法。 另外，本发明提供实现半导体器件的高速操作和高性能的半导体器件及其制造方法。 另外，本发明的目的在于提供一种制造方法简化的制造方法。 本发明的半导体器件具有岛状半导体膜，该岛状半导体膜形成在具有绝缘面的基板上，形成在岛状半导体膜上的栅电极，其中栅电极通过高密度等离子体将其表面氧化成 缩小了通道的实际长度。

公开(公告)号：US07326961B2

公开(公告)日：2008-02-05

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L29/72

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

公开(公告)号：US07211502B2

公开(公告)日：2007-05-01

申请号：US10806353

申请日：2004-03-23

申请人： Shunpei Yamazaki ,  Tetsuji Yamaguchi ,  Atsuo Isobe

发明人： Shunpei Yamazaki ,  Tetsuji Yamaguchi ,  Atsuo Isobe

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  G02F1/136227 ,  H01L21/76882

摘要： A method for manufacturing a semiconductor device in which lower cost can be realized, a wiring with favorable coverage can be formed in a contact hole having a large aspect ratio, wiring capacitance can be reduced and a multilayer wiring can be formed, can be provided. In order to obtain the semiconductor device, the following steps are required; forming a first conductive film which serves as a barrier so as to be in contact with an organic insulating film with an opening portion formed; forming a second conductive film including aluminum so as to be in contact with the first conductive film; or forming a nitride film so as to be in contact with the organic insulating film with the opening portion formed; patterning the nitride film; forming a first conductive film which serves as a barrier so as to be in contact with the nitride film; forming a second conductive film including aluminum so as to be in contact with first conductive film; and thereafter selectively performing a heat treatment under reduced pressure or in normal pressure, and flattening the second conductive film.

摘要翻译： 一种制造可以实现更低成本的半导体器件的方法，可以在具有大纵横比的接触孔中形成具有良好覆盖的布线，可以减少布线电容并且可以形成多层布线。 为了获得半导体器件，需要以下步骤： 形成作为屏障的第一导电膜，以与形成有开口部的有机绝缘膜接触; 形成包含铝的第二导电膜以与第一导电膜接触; 或形成氮化物膜，以与形成有开口部的有机绝缘膜接触; 图案化氮化膜; 形成用作阻挡层以与氮化膜接触的第一导电膜; 形成包含铝的第二导电膜以与第一导电膜接触; 然后选择性地在减压或常压下进行热处理，并使第二导电膜变平。