公开(公告)号：US20100209597A1

公开(公告)日：2010-08-19

申请号：US12701422

申请日：2010-02-05

Applicant: Jerome Noiray ,  Ernst H.A. Granneman

Inventor： Jerome Noiray ,  Ernst H.A. Granneman

IPC: C23C28/00 ,  C23C8/00 ,  B05D5/12 ,  C23C22/00

CPC classification number: C23C8/04 ,  C23C8/10 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/31662

Abstract: Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less.

Abstract translation: 相对于部分制造的集成电路中的含金属材料，硅被选择性地氧化。 在一些实施例中，硅和含金属的材料是部分制造的集成电路的暴露部分，并且可以形成例如晶体管的一部分。 硅和含金属的材料在含有氧化剂和还原剂的气氛中被氧化。 在一些实施方案中，还原剂以约10vol％或更低的浓度存在。

公开(公告)号：US07771534B2

公开(公告)日：2010-08-10

申请号：US11615827

申请日：2006-12-22

Applicant: Eva Tois ,  Suvi Haukka ,  Marko Tuominen

Inventor： Eva Tois ,  Suvi Haukka ,  Marko Tuominen

IPC: C30B25/00

CPC classification number: H01L21/02156 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45531 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/0215 ,  H01L21/02153 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.

Abstract translation: 通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。 在此过程中，将可汽化的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。 本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。 本发明提供了一种用于生长控制含有SiO 2的薄膜的控制方法，反应时间足够短。

公开(公告)号：US07771533B2

公开(公告)日：2010-08-10

申请号：US10148525

申请日：2000-12-04

Applicant: Eva Tois ,  Suvi Haukka ,  Marko Tuominen

Inventor： Eva Tois ,  Suvi Haukka ,  Marko Tuominen

IPC: C30B25/00

CPC classification number: H01L21/02156 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45531 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/0215 ,  H01L21/02153 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2 with sufficiently short reaction times.

Abstract translation: 通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。 在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。 本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。 本发明提供了一种控制方法，用于生长控制含有SiO 2的薄膜，反应时间足够短。

公开(公告)号：US07754013B2

公开(公告)日：2010-07-13

申请号：US11527080

申请日：2006-09-25

Applicant: Ernst H. A. Granneman

Inventor： Ernst H. A. Granneman

IPC: C30B23/04

CPC classification number: C30B25/14 ,  C23C16/4411 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/10

Abstract: A deposition station allows atomic layer deposition (ALD) of films onto a substrate. The station comprises an upper and a lower substantially flat part between which a substrate is accommodated. The parts are positioned opposite each other and parallel to the substrate during processing. At least one of the parts is provided with a plurality of gas channels that allow at least two mutually reactive reactants to be discharged out of that part to the substrate. The discharge is configured to occur in a sequence of alternating, separated pulses for ALD. In addition, each part is preferably configured to be about 1 mm or less from the substrate to minimize the volume of the reaction chamber to increase the efficiency with which gases are purged from the chamber. Also, for each reactant, the upper and lower parts are preferably kept at a temperature outside of the window in which optimal ALD of that reactant occurs, thereby minimizing deposition of that reactant on deposition station surfaces.

Abstract translation: 沉积站允许膜的原子层沉积（ALD）到基底上。 该工位包括上部和下部基本上平坦的部分，在其之间容纳衬底。 这些部件在加工过程中彼此相对定位并平行于基板。 至少一个部件设置有多个气体通道，其允许至少两个相互反应的反应物从该部分排出到基底。 放电配置为以ALD的交替的分离脉冲的顺序发生。 此外，每个部分优选地被配置为距离基板约1mm或更小，以最小化反应室的体积，以提高气体从腔室中清除的效率。 此外，对于每种反应物，上部和下部优选保持在窗口外的温度，在该温度下发生该反应物的最佳ALD，从而使该反应物沉积在沉积站表面上。

公开(公告)号：US07740437B2

公开(公告)日：2010-06-22

申请号：US11525724

申请日：2006-09-22

Applicant: Christianus Gerardus Maria De Ridder ,  Edwin den Hartog

Inventor： Christianus Gerardus Maria De Ridder ,  Edwin den Hartog

IPC: B65G49/07

CPC classification number: H01L21/67769 ,  Y10S414/14

Abstract: A system for processing semiconductor substrates includes a front-end with at least two vertical levels of input/output ports for transferring substrate cassettes into or out of the housing of the processing system. The front-end also includes at least one level of storage positions, e.g., two levels of storage positions, which can be disposed between the two vertical levels of the input/output ports. The two vertical levels of storage positions can each be provided with two storage positions and each of two levels of input/output ports can be provided with accommodations for two cassettes, allowing for a total of eight cassettes to be accommodated at the front-end of the processing system. Inside the housing of the processing system, interior storage positions can be provided adjacent a wafer handling chamber and spaced apart from a cassette store having rotary platforms for housing cassettes. A single cassette handler can be used to access cassettes at each of the input/output ports and the interior storage positions.

Abstract translation: 用于处理半导体衬底的系统包括具有至少两个垂直级别的输入/输出端口的前端，用于将衬底盒传送到处理系统的壳体中或从其移出。 前端还包括至少一个级别的存储位置，例如可以设置在输入/输出端口的两个垂直级之间的两个级别的存储位置。 两个垂直级别的存储位置可以分别具有两个存储位置，并且两个输入/输出端口中的每一个可以为两个盒提供住宿，允许总共八个盒被容纳在前端 处理系统。 在处理系统的壳体内部，可以在晶片处理室附近提供内部存储位置，并与具有用于容纳盒的旋转平台的盒式存储器隔开。 可以使用单个盒式处理器来访问每个输入/输出端口和内部存储位置的盒。

公开(公告)号：US20100151681A1

公开(公告)日：2010-06-17

申请号：US12333161

申请日：2008-12-11

Applicant: Martin A. Knapp ,  Guido Probst

Inventor： Martin A. Knapp ,  Guido Probst

IPC: H01L21/44

CPC classification number: C23C16/45531 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76862

Abstract: Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.

Abstract translation: 在环状化学气相沉积工艺中形成氮化钛（TiSiN）膜。 在一些实施方案中，TiSiN膜是使用TiCl 4，NH 3和SiH 4作为前体在间歇式反应器中形成的。 衬底设置在间歇式反应器的沉积室中。 在每个沉积循环中，通过将TiCl 4与NH 3同时流入沉积室，在衬底上形成TiN层。 沉积室随后用NH 3冲洗。 以制备用于硅掺入的TiN层。 SiH4随后流入沉积室。 将SiH 4的硅掺入到TiN层中以形成TiSiN。 在发现硅前体之前，将TiN层暴露于NH 3以促进有效的硅掺入到TiN层中以形成TiSiN。

公开(公告)号：US07732331B2

公开(公告)日：2010-06-08

申请号：US10998229

申请日：2004-11-16

Applicant: Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

Inventor： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

IPC: H01L21/44 ,  H01L21/00 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.

Abstract translation: 本发明提供一种制造半导体器件的方法，其可以通过铜互连促进半导体器件的商业化。 在金属互连线制造的过程中，与Al中间层结合的TiN薄膜用作沟槽或通孔壁上的扩散阻挡层。 为了形成，Al沉积在TiN薄膜上，随后铜填充沟槽。 Al扩散到TiN层并与氧或氮反应，这将有效地吸收晶界，从而阻止铜的扩散。

公开(公告)号：US07718518B2

公开(公告)日：2010-05-18

申请号：US11640471

申请日：2006-12-14

Applicant: Peter Marc Zagwijn ,  Theodorus Gerardus Maria Oosterlaken ,  Steven R. A. Van Aerde ,  Pamela René Fischer

Inventor： Peter Marc Zagwijn ,  Theodorus Gerardus Maria Oosterlaken ,  Steven R. A. Van Aerde ,  Pamela René Fischer

IPC: H01L21/20

CPC classification number: C23C16/24 ,  C23C16/45523 ,  C23C16/45578 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

Abstract translation: 在低温下在间歇式处理室中形成掺杂硅层。 用于硅层形成的硅前体是聚硅烷，例如丙硅烷，掺杂剂前体是诸如磷化氢的n型掺杂剂。 硅前体可以与掺杂剂前体的流动或者与掺杂剂前体的流分开地流入处理室。 令人惊奇的是，沉积速率与掺杂剂前体流动无关，而掺杂剂掺杂随着掺杂剂前体流动线性增加。

公开(公告)号：US07666773B2

公开(公告)日：2010-02-23

申请号：US11376704

申请日：2006-03-14

Applicant: Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: H01L21/20

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

Abstract translation: 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。

公开(公告)号：US20100009080A1

公开(公告)日：2010-01-14

申请号：US12498885

申请日：2009-07-07

Applicant: Gert Jan Snijders ,  Ivo Raaijmakers

Inventor： Gert Jan Snijders ,  Ivo Raaijmakers

IPC: C23C16/00 ,  C23C16/54

CPC classification number: C23C16/4481

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract translation: 公开了在衬底上沉积膜的方法和系统。 在一个实施方案中，一种方法包括将非气态前体转化成气相。 转化前体包括：通过以足够高的流速流动气体来形成流化床以悬浮和搅拌多个固体颗粒，并将非气态前体的相转化为流化床中的气相。 该方法还包括将气相中的前体转移通过通道; 并且在一个或多个基底上进行沉积，转移的前体在气相中。