公开(公告)号：US20050041543A1

公开(公告)日：2005-02-24

申请号：US10895988

申请日：2004-07-22

Applicant: Haruyoshi Ono ,  Hidemitsu Sugawara

Inventor： Haruyoshi Ono ,  Hidemitsu Sugawara

IPC: G02B6/42 ,  G02B7/00 ,  G11B7/00

CPC classification number: G02B6/4237 ,  G02B6/4204 ,  G02B6/4225 ,  G02B6/4226

Abstract: An optical axis adjusting method for adjusting a tilt angle of an optical axis in two regions optically coupled in a holding member includes the steps of: roughly adjusting the optical axis by irradiating a first region on the holding member with a laser beam; and finely adjusting the optical axis by irradiating a second region on the holding member with a laser beam. One of the two regions is set as a reference point. The first region is located closer to the reference point, while the second region is located further from the reference point.

Abstract translation: 用于调节光学耦合在保持构件中的两个区域中的光轴的倾斜角的光轴调节方法包括以下步骤：通过用激光束照射保持构件上的第一区域来大致调节光轴; 并通过用激光束照射保持构件上的第二区域来微调光轴。 两个地区之一被设定为参考点。 第一区域更靠近参考点，而第二区域位于比参考点更远的位置。

公开(公告)号：US08588266B2

公开(公告)日：2013-11-19

申请号：US11499651

申请日：2006-08-07

Applicant: Takuya Fujii

Inventor： Takuya Fujii

IPC: H01S3/10 ,  H01S3/08

CPC classification number: H01S5/12 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/124 ,  H01S5/1246 ,  H01S5/125

Abstract: A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.

Abstract translation: 半导体激光器具有第一衍射光栅区域。 第一衍射光栅区域具有多个段。 每个段具有包括衍射光栅的第一区域和与第一区域组合的空间区域的第二区域。 至少两个第二区域的光学长度彼此不同。 每个段的折射率是可变的。

公开(公告)号：US08563991B2

公开(公告)日：2013-10-22

申请号：US13338356

申请日：2011-12-28

Applicant: Tsutomu Ishikawa

Inventor： Tsutomu Ishikawa

IPC: H01L27/15

CPC classification number: H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

Abstract translation: 光学半导体器件具有半导体衬底，光学半导体区域和加热器。 光半导体区域设置在半导体衬底上，其宽度小于半导体衬底的宽度。 加热器设置在光学半导体区域上。 光学半导体区域具有包层区域，光波导层和低热导率层。 光波导层设置在包层区域中，折射率高于包层区域的折射率。 低导热率层设置在光波导层与半导体基板之间，其热导率低于包层区域。

公开(公告)号：US08304267B2

公开(公告)日：2012-11-06

申请号：US12574988

申请日：2009-10-07

Applicant: Takuya Fujii

Inventor： Takuya Fujii

IPC: H01L33/60 ,  H01S5/187

CPC classification number: H01S5/125 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/124 ,  H01S5/1246

Abstract: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.

Abstract translation: 半导体激光器具有第一和第二衍射光栅区域。 第一衍射光栅区具有段，具有增益，并且具有反射光谱的第一离散峰。 第二衍射光栅区域具有彼此组合的段，并具有反射光谱的第二离散峰。 每个段具有衍射光栅和空间区域。 衍射光栅的间距基本相等。 第二离散峰的波长间隔与第一离散峰的波长间隔不同。 当第一离散峰和第二离散峰的给定峰之间的关系发生变化时，第一离散峰的给定峰的一部分与第二离散峰的一部分重叠。 位于第一衍射光栅区域或第二衍射光栅区域中的第一段具有比第一衍射光栅区域和第二衍射光栅区域的其他区段更短或更长的光学长度，其中衍射的间距的一半的奇数倍 第一衍射光栅区域的光栅。

公开(公告)号：US07964486B2

公开(公告)日：2011-06-21

申请号：US12027425

申请日：2008-02-07

Applicant: Tadashi Watanabe ,  Hajime Matsuda

Inventor： Tadashi Watanabe ,  Hajime Matsuda

IPC: H01L21/28

CPC classification number: H01L29/7787 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/8128

Abstract: A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid.

Abstract translation: 一种用于制造场效应晶体管的方法，包括：形成设置在半导体层上的绝缘膜，所述绝缘膜具有暴露所述半导体层的表面并且包括氧化硅的开口; 在所述绝缘膜上和所述开口中形成肖特基电极，所述肖特基电极具有突出部分，并且具有设置在与所述绝缘膜接触并包含氧的区域中的第一接触层，以及设置在所述绝缘膜上的第二接触层 第一接触层并且含有比第一接触层的氧更小的氧含量; 并通过包含氢氟酸的溶液除去绝缘膜。

公开(公告)号：US20110096804A1

公开(公告)日：2011-04-28

申请号：US12981763

申请日：2010-12-30

Applicant: Takuya Fujii

Inventor： Takuya Fujii

IPC: H01S5/30 ,  G02B6/34

CPC classification number: H01S5/0612 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1039 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125

Abstract: An optical semiconductor device includes a waveguide having one or more first segments having a region that includes a diffractive grating and another region combined to the region, one or more second segments having a region that includes a diffractive grating and another region combined to the region and a plurality of third segments having a region the includes a diffractive grating and another region combined to the region, a length of the second segment being different from that of the first segment, a length of the third segment being shown as L3=L1+(L2−L1)×K1 in which 0.3≦K1≦0.7, L1 is a length of the first segment, L2 is a length of the second segment and L3 is a length of the third segment; and a refractive index control portion controlling refractive index of the first segment through the third segments.

Abstract translation: 一种光学半导体器件包括具有一个或多个第一段的波导，该第一段具有包括衍射光栅的区域和与该区域组合的另一区域，一个或多个第二段具有包括衍射光栅的区域和与该区域组合的另一区域， 多个第三段，其具有包括衍射光栅的区域和与该区域组合的另一区域，第二段的长度不同于第一段的长度，第三段的长度被示为L3 = L1 +（L2 -L1）×K1，其中0.3＆nlE; K1＆nlE; 0.7，L1是第一段的长度，L2是第二段的长度，L3是第三段的长度; 以及折射率控制部分，其控制通过第三片段的第一片段的折射率。

公开(公告)号：US07875538B2

公开(公告)日：2011-01-25

申请号：US11944953

申请日：2007-11-26

Applicant: Keita Matsuda

Inventor： Keita Matsuda

IPC: H01L29/778 ,  H01L21/338

CPC classification number: H01L29/2003 ,  H01L29/47 ,  H01L29/66462 ,  H01L29/66848 ,  H01L29/7786 ,  H01L29/812

Abstract: A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer includes a layer that contacts the Schottky electrode and contains AlGaN, InAlGaN or GaN. The Schottky electrode that contains indium includes one of an indium oxide layer and an indium tin oxide layer.

Abstract translation: 半导体器件包括：包括沟道层的氮化物半导体层，与氮化物半导体层接触并包含铟的肖特基电极和与沟道层接触的欧姆电极。 氮化物半导体层包括接触肖特基电极并含有AlGaN，InAlGaN或GaN的层。 包含铟的肖特基电极包括氧化铟层和氧化铟锡层中的一种。

公开(公告)号：US07821134B2

公开(公告)日：2010-10-26

申请号：US11655237

申请日：2007-01-19

Applicant: Norikazu Iwagami ,  Masaomi Emori

Inventor： Norikazu Iwagami ,  Masaomi Emori

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/3192 ,  H01L21/76897 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81191 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor device includes a lower pad layer, an insulating layer and an upper pad layer. The lower pad layer is provided on a semiconductor substrate. The insulating layer is away from a surrounding of the lower pad layer so that a space having a recess on a surface between the lower pad layer and the insulating layer is formed. The upper pad layer covers over the lower pad layer and the space, extends to an upper face of the insulating layer, and has an area larger than that of the lower pad layer.

Abstract translation: 半导体器件包括下焊盘层，绝缘层和上焊盘层。 下衬垫层设置在半导体衬底上。 绝缘层远离下焊盘层的周围，从而形成在下焊盘层和绝缘层之间的表面上具有凹部的空间。 上衬垫层覆盖下衬垫层和空间，延伸到绝缘层的上表面，并且具有比下衬垫层的面积大的面积。

公开(公告)号：US07807954B2

公开(公告)日：2010-10-05

申请号：US12059232

申请日：2008-03-31

Applicant: Yoshihiro Yoneda ,  Ryuji Yamabi

Inventor： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC: G01J1/42

CPC classification number: H01L25/167 ,  G02B6/4257 ,  H01L31/02161 ,  H01L31/105 ,  H01L2924/0002 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0264 ,  H01L2924/00

Abstract: An optical semiconductor module with a light receiving element with an upper and side light receiving face and a light emitting element mounted on the same mounting carrier. The light receiving element has a light receiving face on an upper face and a side face covered with an antireflection film. The mounting unit has the light emitting element and the light receiving element mounted so that they encompass a positional relationship that the light emitted from the light emitting element is optically connected at least on the light receiving face of the side face of the light receiving element.

Abstract translation: 一种具有光接收元件的光学半导体模块，其具有上和下光接收面以及安装在同一安装载体上的发光元件。 光接收元件具有在上表面上的光接收面和被防反射膜覆盖的侧面。 安装单元具有安装发光元件和受光元件，使得它们包含从发光元件发射的光至少在光接收元件的侧面的光接收面上光学连接的位置关系。

公开(公告)号：US07754616B2

公开(公告)日：2010-07-13

申请号：US11712422

申请日：2007-03-01

Applicant: Toshiyuki Kosaka ,  Masaomi Emori

Inventor： Toshiyuki Kosaka ,  Masaomi Emori

IPC: H01L21/302

CPC classification number: H01L21/3081 ,  H01L21/0332

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer on a layer that is to be subjected to etching and contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride, the mask layer having an opening and including a nickel chrome film, a gold film, and a nickel film in this order when seen from the layer to be subjected to etching; and performing etching on the layer to be subjected to etching, with the mask layer serving as a mask.

Abstract translation: 制造半导体器件的方法包括：在要进行蚀刻的层上形成掩模层，并且包含碳酸硅，氧化硅，蓝宝石，氮化镓，氮化镓铝，氮化镓铟和铝中的至少一种 氮化物，所述掩模层具有开口并且包含镍铬膜，金膜和镍膜，从被蚀刻的层面观察时; 并且在掩模层用作掩模的情况下对要进行蚀刻的层进行蚀刻。