Patterning methods for stretchable structures
    31.
    发明授权
    Patterning methods for stretchable structures 有权
    可拉伸结构的图案化方法

    公开(公告)号:US08187795B2

    公开(公告)日:2012-05-29

    申请号:US12331131

    申请日:2008-12-09

    申请人: Kanti Jain Kevin Lin

    发明人: Kanti Jain Kevin Lin

    摘要: Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 mm2 or greater or 1 m2 or greater) stretchable and/or flexible electronic devices, for example manufacturing methods permitting a reduced number of steps. The techniques described herein further provide for improved heterogeneous integration of components within an electronic device, for example components having improved alignment and/or relative positioning within an electronic device. Also described herein are flexible and/or stretchable electronic devices, such as interconnects, sensors and actuators.

    摘要翻译: 这里描述了使用激光烧蚀图案化方法制造可拉伸和/或柔性电子器件的处理技术。 本文使用的激光烧蚀图案化方法允许有效地制造大面积(例如,高达1mm 2或更大或1m 2或更大)的可拉伸和/或柔性电子器件,例如允许减少步数的制造方法。 本文描述的技术进一步提供了改进的电子设备内的组件的异构集成,例如具有电子设备内的改进的对准和/或相对定位的组件。 本文还描述了柔性和/或可拉伸的电子设备,例如互连,传感器和致动器。

    TILT STRUCTURE
    32.
    发明申请
    TILT STRUCTURE 有权
    倾斜结构

    公开(公告)号:US20110244190A1

    公开(公告)日:2011-10-06

    申请号:US13072127

    申请日:2011-03-25

    IPC分类号: B32B3/26

    摘要: A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

    摘要翻译: 倾斜结构包括形成在基板部分上的轴部分,倾斜结构膜,其一端形成在轴部分的上表面上,另一端接合到基板部分;以及薄膜部分,设置在倾斜结构 薄膜,位于由所述轴部的上表面构成的角部和所述轴部的侧面之间,并且具有比所述倾斜结构膜更薄的膜厚,所述倾斜结构膜在所述薄膜部弯曲,并且 由基板部和倾斜结构膜形成锐角。

    Wafer level sensing package and manufacturing process thereof
    33.
    发明授权
    Wafer level sensing package and manufacturing process thereof 有权
    晶圆级感测封装及其制造工艺

    公开(公告)号:US07915065B2

    公开(公告)日:2011-03-29

    申请号:US12331539

    申请日:2008-12-10

    IPC分类号: H01L21/00

    摘要: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    摘要翻译: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片,其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分,而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 以及在所述孔中形成导电凸块以电连接到所述导电金属层。

    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES
    34.
    发明申请
    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES 失效
    具有平行平板电极的自对准纳米尺度装置

    公开(公告)号:US20100319962A1

    公开(公告)日:2010-12-23

    申请号:US12488948

    申请日:2009-06-22

    IPC分类号: H01B5/14 B05D5/12

    CPC分类号: B81C1/00698 B81B2201/0292

    摘要: A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

    摘要翻译: 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

    MEMS sensor suite on a chip
    35.
    发明授权
    MEMS sensor suite on a chip 有权
    MEMS传感器套件在芯片上

    公开(公告)号:US07748272B2

    公开(公告)日:2010-07-06

    申请号:US12051905

    申请日:2008-03-20

    IPC分类号: G01P1/02 G01P15/125

    摘要: The MEMS Sensor Suite on a Chip provides the capability, monolithically integrated onto one MEMS chip, to sense temperature, humidity, and two axes of acceleration. The device incorporates a MEMS accelerometer, a MEMS humidity sensor, and a MEMS temperature sensor on one chip. These individual devices incorporate proof masses, suspensions, humidity sensitive capacitors, and temperature sensitive resistors (thermistors) all fabricated in a common fabrication process that allows them to be integrated onto one micromachined chip. The device can be fabricated in a simple micromachining process that allows its size to be miniaturized for embedded and portable applications. During operation, the sensor suite chip monitors temperature levels, humidity levels, and acceleration levels in two axes. External circuitry allows sensor readout, range selection, and signal processing.

    摘要翻译: 芯片上的MEMS传感器套件提供单一集成到一个MEMS芯片上的能力,以感测温度,湿度和两个加速轴。 该器件在一个芯片上集成了MEMS加速度计,MEMS湿度传感器和MEMS温度传感器。 这些单独的器件包含所有在通用制造工艺中制造的校准质量,悬浮液,湿度敏感电容器和温度敏感电阻器(热敏电阻器),从而允许它们集成到一个微加工芯片上。 该器件可以在简单的微加工工艺中制造,允许其尺寸被小型化以用于嵌入式和便携式应用。 在运行过程中,传感器套件芯片监测两个轴的温度水平,湿度水平和加速度水平。 外部电路允许传感器读数,范围选择和信号处理。

    STANDING WAVE FLUIDIC AND BIOLOGICAL TOOLS
    37.
    发明申请
    STANDING WAVE FLUIDIC AND BIOLOGICAL TOOLS 审中-公开
    标准波流体和生物工具

    公开(公告)号:US20090288479A1

    公开(公告)日:2009-11-26

    申请号:US12395213

    申请日:2009-02-27

    IPC分类号: G01B5/28

    摘要: The present invention provides standing wave fluidic and biological tools, including: at least one elongated fiber that has mesoscale (i.e. milliscale), microscale, nanoscale, or picoscale dimensions, the at least one elongated fiber having a first end and a second end; and an actuator coupled to the first end of the at least one elongated fiber, wherein the actuator is operable for applying oscillation cycles to the at least one elongated fiber in one or more directions, and wherein the actuator is operable for generating a standing wave in the at least one elongated fiber. These standing wave fluidic and biological tools are selectively disposed in a fluid to provide a function such as mixing the fluid, measuring the viscosity of the fluid, attracting particles in the fluid, shepherding particles in the fluid, providing propulsive force in the fluid, pumping the fluid, dispensing the fluid, sensing particles in the fluid, and detecting particles in the fluid, among others.

    摘要翻译: 本发明提供了驻波流体学和生物学工具,其包括:至少一种细长纤维,其具有中尺度(即,微米),微米级,纳米级或者尺寸尺寸,所述至少一种细长纤维具有第一端和第二端; 以及联接到所述至少一个细长光纤的第一端的致动器,其中所述致动器可操作以在一个或多个方向上对所述至少一根细长光纤施加振荡周期,并且其中所述致动器可操作以产生驻波 所述至少一根细长纤维。 这些驻波流体和生物工具选择性地设置在流体中以提供诸如混合流体,测量流体的粘度,吸引流体中的颗粒,流体中的游牧颗粒,在流体中提供推进力的泵送 流体,分配流体,感测流体中的颗粒,以及检测流体中的颗粒等。

    MICROMECHANICAL SENSOR FOR MEASURING THE MASS FLOW RATE IN ACCORDANCE WITH THE CORIOLIS PRINCIPLE
    39.
    发明申请
    MICROMECHANICAL SENSOR FOR MEASURING THE MASS FLOW RATE IN ACCORDANCE WITH THE CORIOLIS PRINCIPLE 失效
    用于根据CORIOLIS原理测量质量流量的微观传感器

    公开(公告)号:US20090272200A1

    公开(公告)日:2009-11-05

    申请号:US12306012

    申请日:2007-06-15

    IPC分类号: G01F1/80

    摘要: In a micromechanical sensor (11) for measuring a mass flow rate in accordance with the Coriolis principle, two line sections (13) are mounted in a suspension means (24) such that they can oscillate, as a result of which they can be caused to oscillate in phase opposition (essential for the measuring principle). A spacer layer (18) is provided between the layers (12a, 12b) forming the line sections (13), the spacer layer ensuring that there is a space between the line sections (13) in the quiescent state. Oscillation of the line sections in phase opposition only becomes possible at all as a result of this since this prevents collision of the line sections (13) as they approach one another.

    摘要翻译: 在用于根据科里奥利原理测量质量流量的微机械传感器(11)中,两个线段(13)安装在悬挂装置(24)中,使得它们可以振荡,结果可能导致它们 以相反的方式振荡(对测量原理至关重要)。 间隔层(18)设置在形成线路段(13)的层(12a,12b)之间,间隔层确保在静止状态下的线段(13)之间存在空间。 因此,由于这样可以防止线路部分(13)在彼此接近时发生碰撞,所以相位相反的线路部分的振荡完全是可能的。

    WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF
    40.
    发明申请
    WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF 有权
    WAFER水平感测包装及其制造工艺

    公开(公告)号:US20090124074A1

    公开(公告)日:2009-05-14

    申请号:US12331539

    申请日:2008-12-10

    IPC分类号: H01L21/768

    摘要: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    摘要翻译: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片,其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分,而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 并且在所述孔中形成导电凸块以电连接到所述导电金属层。