Copper nanowire production for interconnect applications
    32.
    发明授权
    Copper nanowire production for interconnect applications 有权
    铜纳米线生产用于互连应用

    公开(公告)号:US08834597B1

    公开(公告)日:2014-09-16

    申请号:US13485721

    申请日:2012-05-31

    摘要: A method of fabricating metallic Cu nanowires with lengths up to about 25 μm and diameters in a range 20-100 nm, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 μm), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nm. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

    摘要翻译: 如果需要,制造长度大约25μm,直径在20-100nm范围内的金属Cu纳米线的方法或更高。 垂直取向或侧向取向的氧化铜结构(CuO和/或Cu2O)在Cu衬底上生长。 氧化铜结构以99%以上的H或H 2还原,在该还原过程中,长度减小(不大于约25μm),衬底上存活的纳米结构的密度降低,并且存活的纳米结构的直径 约20-100nm的范围。 所得的纳米线基本上是纯Cu,并且可以横向(用于局部或全局互连)或者可以垂直取向(对于标准垂直互连)。

    Method for making nanostructures
    35.
    发明授权
    Method for making nanostructures 有权
    制造纳米结构的方法

    公开(公告)号:US07993703B2

    公开(公告)日:2011-08-09

    申请号:US11915238

    申请日:2006-05-29

    IPC分类号: C23C16/00 C23C16/26

    摘要: A process for making nanostructures on a support, including: supplying a support including a surface layer on one of its faces, covering the surface layer by a catalyst layer structured according to a pattern exposing areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst, etching the thickness of the surface layer in the areas not covered by the catalyst layer, and selectively growing nanostructures on the areas of the surface layer covered by the catalyst. The process can also be used to make cathode structures with electrically independent nanostructures.

    摘要翻译: 一种在载体上制备纳米结构的方法,包括:在其一个表面上提供包括表面层的载体,通过根据暴露由催化剂覆盖的表面层的区域的图案构成的催化剂层覆盖表面层, 表面层未被催化剂覆盖,蚀刻未被催化剂层覆盖的区域中的表面层的厚度,并且在由催化剂覆盖的表面层的区域上选择性地生长纳米结构。 该方法也可用于制备具有电独立纳米结构的阴极结构。

    Carbon nanotube particulates, compositions and use thereof
    36.
    发明授权
    Carbon nanotube particulates, compositions and use thereof 有权
    碳纳米管颗粒,组合物及其用途

    公开(公告)号:US07811542B1

    公开(公告)日:2010-10-12

    申请号:US11531730

    申请日:2006-09-14

    IPC分类号: D01F9/12 B82B1/00

    摘要: A method for making carbon nanotube particulates involves providing a catalyst comprising catalytic metals, such as iron and molybdenum or metals from Group VIB or Group VIIIB elements, on a support material, such as magnesia, and contacting the catalyst with a gaseous carbon-containing feedstock, such as methane, at a sufficient temperature and for a sufficient contact time to make small-diameter carbon nanotubes having one or more walls and outer wall diameters of less than about 3 nm. Removal of the support material from the carbon nanotubes yields particulates of enmeshed carbon nanotubes that retain an approximate three-dimensional shape and size of the particulate support that was removed. The carbon nanotube particulates can comprise ropes of carbon nanotubes. The carbon nanotube particulates disperse well in polymers and show high conductivity in polymers at low loadings. As electrical emitters, the carbon nanotube particulates exhibit very low “turn on” emission field.

    摘要翻译: 制造碳纳米管颗粒的方法涉及提供催化剂,其包含催化金属如铁和钼或VIB族或VIIIB族元素的金属,在载体材料如氧化镁上,并使催化剂与气态含碳原料接触 ,例如甲烷,在足够的温度下和足够的接触时间来制备具有一个或多个壁和外壁直径小于约3nm的小直径碳纳米管。 从碳纳米管去除载体材料产生嵌入的碳纳米管的颗粒,其保留被除去的颗粒载体的近似三维形状和尺寸。 碳纳米管颗粒可以包括碳纳米管的绳索。 碳纳米管颗粒分散在聚合物中,并且在低负载下在聚合物中显示高导电性。 作为电发射体,碳纳米管微粒表现出非常低的“导通”发射场。

    FIELD EMISSION ELECTRODE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
    37.
    发明申请
    FIELD EMISSION ELECTRODE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 有权
    场发射电极,其制造方法和电子器件

    公开(公告)号:US20100219744A1

    公开(公告)日:2010-09-02

    申请号:US12779583

    申请日:2010-05-13

    IPC分类号: H01J1/62 H01J1/02

    CPC分类号: H01J1/3048 H01J2201/30457

    摘要: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

    摘要翻译: 在基板上形成具有X射线衍射中的金刚石图案和由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时,电子发射膜可以将场强限制在低水平,并且具有均匀的电子发射特性。

    Field emission plane light source and method for making the same
    39.
    发明授权
    Field emission plane light source and method for making the same 有权
    场发射平面光源及其制作方法

    公开(公告)号:US07745983B2

    公开(公告)日:2010-06-29

    申请号:US11603639

    申请日:2006-11-21

    IPC分类号: H01J1/62

    摘要: A field emission plane light source generally incorporates an anode and a cathode. The anode includes an anode substrate, an anode conductive layer formed on a surface of the anode substrate, and a fluorescent layer formed on the anode conductive layer. The cathode includes a cathode substrate facing and separated from the anode substrate, a cathode conductive layer formed on a surface of the cathode substrate, and an electron emission layer formed on the cathode conductive layer and facing the fluorescent layer of the anode. The cathode and anode substrates have a seal formed therebetween. The electron emission layer includes a glass matrix and a plurality of carbon nanotubes, metallic conductive particles and getter powders dispersed therein. A method for making such field emission plane light source is also provided.

    摘要翻译: 场发射平面光源通常包含阳极和阴极。 阳极包括阳极衬底,形成在阳极衬底的表面上的阳极导电层和形成在阳极导电层上的荧光层。 阴极包括面对阳极基板的阴极基板,形成在阴极基板的表面上的阴极导电层和形成在阴极导电层上并与阳极的荧光层相对的电子发射层。 阴极和阳极基板之间形成有密封件。 电子发射层包括玻璃基体和分散在其中的多个碳纳米管,金属导电颗粒和吸气剂粉末。 还提供了制造这种场致发射平面光源的方法。

    Electron-emitting device and manufacturing method thereof
    40.
    发明授权
    Electron-emitting device and manufacturing method thereof 失效
    电子发射器件及其制造方法

    公开(公告)号:US07733006B2

    公开(公告)日:2010-06-08

    申请号:US10516545

    申请日:2003-06-13

    IPC分类号: H01J1/304

    CPC分类号: H01J9/025 H01J1/3048

    摘要: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

    摘要翻译: 提供了一种场致发射型电子发射装置,其电子束的光点尺寸小,电子发射面积大,电子发射能够以低电压发射,制造工艺容易 。 电子发射器件包括电连接到阴极电极5的层2和包含电阻率低于构成层2的材料的电阻率的多个颗粒3,其中颗粒的密度 层2中的3为1×​​10 14 / cm 3以上且5×10 18 / cm 3以下。