Nano-patterned system and magnetic-field applying device thereof
    31.
    发明授权
    Nano-patterned system and magnetic-field applying device thereof 有权
    纳米图案化系统及其磁场施加装置

    公开(公告)号:US09484138B2

    公开(公告)日:2016-11-01

    申请号:US14389972

    申请日:2012-07-17

    Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.

    Abstract translation: 纳米图案系统包括真空室,样品台和磁场施加装置。 磁场施加装置包括电源,磁极和具有导电软铁芯的磁场产生装置和连接到电源的线圈并缠绕在软铁芯上以产生磁场的磁场产生装置。 软铁芯是半封闭框架结构,磁极分别设置在半封闭框架结构的两端。 样品台位于真空室内。 磁极相对于样品台在真空室内彼此相对。 线圈和软铁芯在真空室外。 软铁芯将线圈产生的磁场引入真空室。 磁极将样品定位在样品台上并施加局部磁场。

    PLASMA PRODUCING APPARATUS
    32.
    发明申请
    PLASMA PRODUCING APPARATUS 审中-公开
    等离子体生产设备

    公开(公告)号:US20160240351A1

    公开(公告)日:2016-08-18

    申请号:US15016613

    申请日:2016-02-05

    Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

    Abstract translation: 用于等离子体处理衬底的等离子体制造装置包括具有内表面的室,用于在室内产生电感耦合等离子体的等离子体生产装置,用于在等离子体处理期间支撑衬底的衬底支撑件和设置在腔室内的法拉第屏蔽 用于通过等离子体处理将至少部分内表面与从衬底去除的材料进行屏蔽。 等离子体生产装置包括天线和RF电源,用于以小于或等于1000Hz的频率交替的极性向天线提供RF功率。

    Modulation device and charged particle multi-beamlet lithography system using the same
    33.
    发明授权
    Modulation device and charged particle multi-beamlet lithography system using the same 有权
    调制装置和带电粒子的多光束光刻系统使用相同

    公开(公告)号:US08841636B2

    公开(公告)日:2014-09-23

    申请号:US12911859

    申请日:2010-10-26

    Abstract: The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system includes a beam generator, a beamlet blanker array, a shielding structure and a projection system. The beam generator is arranged for generating a plurality of charged particle beamlets. The beamlet blanker array is arranged for patterning the beamlets. The beamlet blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and are electrically connected to one or more modulators. The shielding structure is of an electrically conductive material for substantially shielding electric fields generated in proximity of the light sensitive elements from the modulators. The shielding structure is arranged to be set at a predetermined potential. The projection system is arranged for projecting the patterned beamlets onto the target surface.

    Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的带电粒子多子束光刻系统。 该系统包括光束发生器,子束遮挡器阵列,屏蔽结构和投影系统。 束发生器被布置用于产生多个带电粒子子束。 子束消隐器阵列被布置成用于图形化子束。 子束遮蔽器阵列包括多个调制器和多个光敏元件。 光敏元件布置成接收携带光束的图案数据,并且电连接到一个或多个调制器。 屏蔽结构是导电材料,用于基本上屏蔽在光敏元件附近从调制器产生的电场。 屏蔽结构被设置为预定电位。 投影系统布置成将图案化的子束投影到目标表面上。

    Charged particle multi-beamlet lithography system with modulation device
    34.
    发明授权
    Charged particle multi-beamlet lithography system with modulation device 有权
    带调制装置的带电粒子多光束光刻系统

    公开(公告)号:US08759787B2

    公开(公告)日:2014-06-24

    申请号:US13937321

    申请日:2013-07-09

    Abstract: The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.

    Abstract translation: 本发明涉及一种用于图案化靶的带电粒子光刻系统。 光刻系统具有用于产生多个带电粒子束的光束发生器,具有设置有孔阵列的光束阻挡表面的光束停止阵列; 以及用于通过偏转调制子束的调制装置。 调制装置具有设置有排列成阵列的多个调制器的基板,每个调制器设置有在对应的孔的相对侧上延伸的电极。 调制器被分组地布置成用于将一组子束引向光束停止阵列中的单个孔。 每个组内的各个调制器具有这样的取向,使得如果需要阻挡,则通过的子束被引导到光束停止阵列上的阻挡位置。 不同子束的光束阻挡位置基本均匀地分布在光束停止阵列中相应的单个孔周围。

    System and Method for Controlling Charge-up in an Electron Beam Apparatus
    35.
    发明申请
    System and Method for Controlling Charge-up in an Electron Beam Apparatus 有权
    用于控制电子束装置中电荷的系统和方法

    公开(公告)号:US20140151554A1

    公开(公告)日:2014-06-05

    申请号:US14081465

    申请日:2013-11-15

    Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

    Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例,其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷,从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场,以将具有低动能的一些二次电子反射回样品表面。

    Charged particle multi-beamlet lithography system with modulation device
    36.
    发明申请
    Charged particle multi-beamlet lithography system with modulation device 有权
    带调制装置的带电粒子多光束光刻系统

    公开(公告)号:US20110260040A1

    公开(公告)日:2011-10-27

    申请号:US12911911

    申请日:2010-10-26

    Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column, a beam stop array having a surface for blocking beamlets from reaching the target surface and an array of apertures in the surface for allowing the beamlets to reach the target surface, and a modulation device for modulating the beamlets to prevent one or more of the beamlets from reaching the target surface or allow one or more of the beamlets to reach the target surface, by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. The modulation device comprises a plurality of apertures arranged in arrays for letting the beamlets pass through the modulation device, a plurality of modulators arranged in arrays, each modulator provided with electrodes extending on opposing sides of an aperture for generating a voltage difference across the aperture, and a plurality of light sensitive elements arranged in arrays, for receiving modulated light beams and converting the light beams into electric signals for actuating the modulators, wherein the light sensitive elements are located within the column, wherein the modulation device is subdivided into a plurality of alternating beam areas and non-beam areas, the arrays of modulators are located in the beam areas, and the arrays of light sensitive elements are located in the non-beam areas and are in communication with the modulators in an adjacent beam area.

    Abstract translation: 一种用于将图案转印到目标表面上的带电粒子光刻系统。 该系统包括用于产生多个带电粒子子束的束发生器,多个子束限定列,具有用于阻挡子束到达目标表面的表面的光束停止阵列和该表面中的孔阵列,用于允许子束 到达目标表面,以及调制装置,用于调制子束以防止一个或多个子束到达目标表面或允许一个或多个子束到达目标表面,通过偏转或不偏转子束,使得 子束被阻挡或不被阻挡束阻挡。 调制装置包括排列成阵列的多个孔,用于使子束通过调制装置,多个以阵列排列的调制器,每个调制器设置有在孔的相对侧延伸的电极,用于产生穿过孔的电压差, 以及多个以阵列排列的感光元件,用于接收调制光束并将光束转换成用于致动调制器的电信号,其中光敏元件位于列内,其中调制装置被细分为多个 交替光束区域和非光束区域,调制器阵列位于光束区域中,并且光敏元件阵列位于非光束区域中,并且与相邻光束区域中的调制器连通。

    Photo-cathode image projection apparatus for patterning a semiconductor
device
    40.
    发明授权
    Photo-cathode image projection apparatus for patterning a semiconductor device 失效
    用于图案化半导体器件的光阴图像投影设备

    公开(公告)号:US5023462A

    公开(公告)日:1991-06-11

    申请号:US327728

    申请日:1989-03-23

    Abstract: A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

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