公开(公告)号：US20150007941A1

公开(公告)日：2015-01-08

申请号：US14494777

申请日：2014-09-24

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Bon-Woong Koo ,  Richard M. White

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32422 ,  H01J37/32706

Abstract: A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen with a negatively biased DC signal to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen with a positively biased DC signal to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurs after the first processing time interval.

Abstract translation: 等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。 偏置系统被配置为在第一处理时间间隔期间用负偏压的DC信号偏压压板，以在第一处理时间间隔期间从等离子体向工件吸引离子，并且构造成以正偏压的DC信号偏置压板，以将离子从压板排向内部 在清洁时间间隔期间处理室壳体的表面。 清洁时间间隔与第一处理时间间隔分开，并在第一处理时间间隔之后发生。

公开(公告)号：US20140251956A1

公开(公告)日：2014-09-11

申请号：US14199160

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Yub JEON ,  Jeong-Yun LEE ,  Kyung-Sun KIM ,  Tae-Gon KIM

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715

Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Abstract translation: 一种用于蚀刻工艺的设备包括：室，设置在室中的等离子体发生器，堆叠结构，设置在室中以在其上支撑基板，并且在电极板上包括电极板和绝缘涂层，电极棒插入 层叠结构的孔穿透堆叠结构，直接接触基板并与堆叠结构的通孔的侧壁间隔开，至少一个DC脉冲发生器首先向电极板和电极棒产生DC脉冲 将DC脉冲发生器连接到电极棒的连接线以及将DC脉冲发生器连接到电极板的下部的至少一个第二连接线。

公开(公告)号：US20140216922A1

公开(公告)日：2014-08-07

申请号：US13761253

申请日：2013-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： ALAN A. RITCHIE

IPC: C23C14/34

CPC classification number: C23C14/345 ,  C23C14/046 ,  C23C14/35 ,  C23C14/351 ,  C23C14/54 ,  H01J37/32706 ,  H01J37/3405 ,  H01J37/3444

Abstract: Apparatus and method for delivering power to a substrate processing chamber may include a target and a substrate support pedestal disposed in the chamber, a pedestal impedance match device coupled between the substrate support pedestal and ground, wherein the pedestal impedance match device is configured to adjust a bias voltage on the substrate support pedestal, a target impedance match device coupled between the target and ground, wherein the target impedance match device is configured to adjust a bias voltage on the target, a switch electrically coupled to the pedestal impedance match device and the target impedance match device, a first RF power source coupled to the switch, wherein the switch is configured to direct high frequency voltage from the first RF power source to either the target or the substrate support pedestal, and a second RF power source coupled to the substrate support pedestal.

Abstract translation: 用于向基板处理室输送功率的装置和方法可以包括设置在腔室中的靶和基板支撑台座，耦合在基板支撑基座和地之间的基座阻抗匹配装置，其中基座阻抗匹配装置被配置成调整 耦合在目标和地之间的目标阻抗匹配装置，其中所述目标阻抗匹配装置被配置成调整所述目标上的偏置电压，电耦合到所述基座阻抗匹配装置和所述目标的开关 阻抗匹配装置，耦合到所述开关的第一RF电源，其中所述开关被配置为将来自所述第一RF电源的高频电压引导到所述靶或所述衬底支撑基座，以及耦合到所述衬底的第二RF电源 支撑底座。

公开(公告)号：US20140110253A1

公开(公告)日：2014-04-24

申请号：US14123883

申请日：2012-07-05

Applicant: Hiroshi Tamagaki ,  Junji Haga

Inventor： Hiroshi Tamagaki ,  Junji Haga

IPC: C23C14/34 ,  C23C14/50

CPC classification number: C23C14/3464 ,  C23C14/32 ,  C23C14/505 ,  C23C16/4588 ,  C23C16/509 ,  H01J37/32036 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided is a vacuum coating apparatus that deposits a coating on a substrate, the vacuum coating apparatus including: a vacuum chamber; a vacuum exhaust unit that performs a vacuum exhaust operation inside the vacuum chamber; a plurality of rotation holding units that hold the substrate as a coating subject in a rotating state; and a revolution mechanism that revolves the plurality of rotation holding units about a revolution axis parallel to the rotation axes of the respective rotation holding units; in which the plurality of rotation holding units are divided into a plurality of groups so that power is supplied to the respective rotation holding units in a manner that the rotation holding units of the respective groups have different potentials. For example, the respective groups alternately repeat a state where the rotation holding units become cathodes and serve as working electrodes that play primary role to generate glow discharge plasma and a state where the rotation holding units serve as counter electrodes.

Abstract translation: 提供一种在基板上沉积涂层的真空镀膜装置，真空镀膜装置包括：真空室; 真空排气单元，其在真空室内进行真空排气操作; 多个旋转保持单元，其以旋转状态将基板保持为涂层对象; 以及旋转机构，其使所述多个旋转保持单元绕与所述各旋转保持单元的旋转轴线平行的旋转轴线旋转; 其中多个旋转保持单元被分成多个组，使得以各组的旋转保持单元具有不同电位的方式向各旋转保持单元供电。 例如，各组交替重复旋转保持单元成为阴极的状态，作为主要作用的工作电极，产生辉光放电等离子体，旋转保持单元用作对置电极的状态。

公开(公告)号：US20140102370A1

公开(公告)日：2014-04-17

申请号：US14117166

申请日：2012-06-07

Applicant: Frank Torregrosa ,  Laurent Roux

Inventor： Frank Torregrosa ,  Laurent Roux

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/32174 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32706

Abstract: The present invention provides an ion implantation machine comprising: an enclosure ENV that is connected to a pump device VAC; a negatively polarized HT substrate-carrier PPS that is arranged inside said enclosure ENV; and a plasma feed device AP in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber PR provided with an ionization cell BC1, ANT1; said main chamber PR being provided with a gas delivery orifice ING; and the final section CL of said main chamber being provided with head-loss means for creating a pressure drop relative to said body AP. Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.

Abstract translation: 本发明提供一种离子注入机，包括：连接到泵装置VAC的外壳ENV; 设置在所述外壳ENV内的负极化HT衬底载体PPS; 以及在初始部分和端子部分之间延伸的大致圆筒形形式的等离子体供给装置AP，该装置具有设置有电离单元BC1，ANT1的主室PR; 所述主室PR设置有气体输送孔ING; 并且所述主室的最后部分CL设置有相对于所述主体AP产生压降的头部损失装置。 此外，所述等离子体馈送装置AP还包括布置在所述最后部分之外的辅助室AUX，所述辅助室在所述端子部分处打开到所述外壳ENV中。

公开(公告)号：US08679960B2

公开(公告)日：2014-03-25

申请号：US12902250

申请日：2010-10-12

Applicant: George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin ,  Helen L. Maynard ,  Ludovic Godet

Inventor： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin ,  Helen L. Maynard ,  Ludovic Godet

IPC: H01L21/425 ,  H01L21/38

CPC classification number: H01L21/2236 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32834 ,  H01L29/66803

Abstract: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.

Abstract translation: 公开了一种处理具有水平和非水平表面的衬底的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。 该膜的存在可能不利地改变基材的性质。 为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。 该材料修饰步骤可以代替或补充蚀刻工艺。

公开(公告)号：US20130228550A1

公开(公告)日：2013-09-05

申请号：US13571018

申请日：2012-08-09

Applicant: Masahito MORI ,  Masaru Izawa ,  Katsushi Yagi

Inventor： Masahito MORI ,  Masaru Izawa ,  Katsushi Yagi

IPC: H05H1/24 ,  B44C1/22

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32706 ,  H03H7/40 ,  H05H2001/4682

Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.

Abstract translation: 提供了包括其上放置晶片的台，天线电极，高频电源，喷淋板和RF偏置电源的干式蚀刻装置。 此外，偏置路径控制器设置在天线电极的一侧。 偏置路径控制器与由淋浴板形成的相对于RF偏压的频率的静电抗器串联谐振。 然后，偏置路径控制器通过可变感抗来改变和接地阻抗。 利用这种机制，即使使用石英喷淋板用于腐蚀性气体，也可以实现高度均匀的蚀刻。

公开(公告)号：US20130192980A1

公开(公告)日：2013-08-01

申请号：US13749791

申请日：2013-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHENBIN GE ,  ALAN RITCHIE ,  ADOLPH MILLER ALLEN

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/351 ,  H01J37/32706 ,  H01J37/3299 ,  H01J37/3405

Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.

Abstract translation: 本文提供了在基底上沉积含金属层的方法和装置。 在一些实施例中，在物理气相沉积（PVD）室中处理衬底的方法包括将VHF频率的RF功率施加到包括设置在衬底上的PVD室中的金属的靶，以形成等离子体形成 加油站; 可选地向所述目标施加DC电力以将所述等离子体引向所述目标; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 以及控制等离子体和衬底之间的等离子体鞘电压，以在特征结构上形成具有所需晶体结构和/或所需形态的含金属层。

公开(公告)号：US08475624B2

公开(公告)日：2013-07-02

申请号：US11697695

申请日：2007-04-06

Applicant: Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

Inventor： Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

IPC: C23F1/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC classification number: H01L21/02087 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32706 ,  Y10S134/902

Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.

Abstract translation: 提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。 该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。 顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。 该室包括通过处理室的顶表面限定的气体进料。 气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。 泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。 还提供了一种用于清洁基板的斜边缘的方法。

公开(公告)号：US20130160795A1

公开(公告)日：2013-06-27

申请号：US13337418

申请日：2011-12-27

Applicant: Ying Xiao ,  Chin-Hsiang Lin

Inventor： Ying Xiao ,  Chin-Hsiang Lin

IPC: H01L21/3065 ,  B08B6/00

CPC classification number: H01J37/321 ,  G03F7/427 ,  H01J37/32596 ,  H01J37/32706 ,  H01J37/32807 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/31138

Abstract: In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.

Abstract translation: 在一些实施例中，本公开涉及具有与处理室连通的直接和局部等离子体源的等离子体蚀刻系统。 操作直接等离子体以向处理室提供直接等离子体以蚀刻半导体工件。 直接等离子体具有高电位，通过向工件施加大的偏置电压而形成。 蚀刻完成后，偏置电压和直接等离子体源关闭。 然后操作局部等离子体源以将低电位局部等离子体提供到处理室内与工件空间分离的位置。 空间分离导致形成具有与工件接触的零/低电位的扩散等离子体。 扩散等离子体的零/低电位允许执行反应性灰化，同时减轻由正等离子体电位引起的离子轰击造成的工件损伤。