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    High speed electron tunneling device and applications
    31.
    发明授权
    High speed electron tunneling device and applications 有权

    公开(公告)号：US06563185B2

    公开(公告)日：2003-05-13

    申请号：US09860972

    申请日：2001-05-21

    Applicant: Garrett Moddel ,  Blake J. Eliasson

    Inventor： Garrett Moddel ,  Blake J. Eliasson

    IPC: H01L2982

    CPC classification number: H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    Abstract: A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.

    ZnS blue light emitting device
    34.
    发明授权
    ZnS blue light emitting device 失效
    ZnS蓝色发光器件

    公开(公告)号：US4916496A

    公开(公告)日：1990-04-10

    申请号：US256125

    申请日：1988-10-06

    Applicant: Yoshitaka Tomomura ,  Satoshi Yamaue ,  Masahiko Kitagawa ,  Shigeo Nakajima

    Inventor： Yoshitaka Tomomura ,  Satoshi Yamaue ,  Masahiko Kitagawa ,  Shigeo Nakajima

    IPC: H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40

    CPC classification number: H01L33/0037 ,  H01L33/0083

    Abstract: An improved ZnS blue light emitting device is formed with a low-resistivity ZnS layer serving as a luminescent layer, a high-resistivity insulating layer of multi-layer structure for hole carrying injection above the low-resistivity ZnS layer and an electrode on the high-resistivity insulating layer. The high-resistivity insulating layer includes at least two stacked layers of different insulator materials serving different functions.

    Abstract translation: 形成了一种改进的ZnS蓝色发光器件，其具有用作发光层的低电阻率ZnS层，用于在低电阻率ZnS层上方进行空穴注入的多层结构的高电阻绝缘层和高电极上的电极 电阻绝缘层。 高电阻绝缘层包括不同功能的不同绝缘体材料的至少两层堆叠层。

    Light emitting device
    39.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US08471268B2

    公开(公告)日：2013-06-25

    申请号：US13224676

    申请日：2011-09-02

    Applicant: Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    Inventor： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC: H01L33/06

    CPC classification number: H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    Abstract translation: 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Light-emitting diodes with carrier extraction electrodes
    40.
    发明授权
    Light-emitting diodes with carrier extraction electrodes 有权
    具有载体提取电极的发光二极管

    公开(公告)号：US08053982B2

    公开(公告)日：2011-11-08

    申请号：US12243117

    申请日：2008-10-01

    Applicant: Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

    Inventor： Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

    IPC: H01J1/62 ,  H01L27/15

    CPC classification number: H01L33/0037 ,  H01L33/20 ,  H01L33/385 ,  H05B33/0818 ,  H05B33/0821 ,  H05B37/0272

    Abstract: One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.

    Abstract translation: 本发明的一个实施例涉及具有一个或多个发光层的发光二极管，设置在发光二极管上的一对电极，使得可以施加工作电压以产生来自一个或多个光的光 以及与所述一个或多个发光层电连通的至少一个外部电极。 大约在工作电压终止时将适当的电压施加到至少一个外部电极，从一个或多个发光层提取出多余的电子，并减少在工作电压的时间段内的电子 - 空穴复合的持续时间 已关闭

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