Abstract:
A generator of a signal including a memory in which instructions are stored, each instruction including a code portion and an argument portion; circuitry for successively reading instructions stored in the memory; decoding circuitry capable of receiving, for each read instruction, the code portion of the instruction and of providing an activation signal which depends on the code portion; and circuitry for providing the signal capable of receiving, for each read instruction, the argument portion of the instruction and capable, according to the activation signal, of storing the argument portion and of providing the signal equal to the argument portion or of providing the signal equal to the previously-stored argument portion.
Abstract:
A method of reading voltages from an image sensor having an array of pixels, each pixel Having at least one photodiode connectable to a storage node, the method including: controlling each pixel in a row of pixels to store and output a first voltage value at a first instance, a second voltage value at a second instance, and a third voltage value at a third instance, the first, second and third voltage values being representative of charge accumulated by the photodiodes during an integration phase; comparing the first voltage value from each pixel with a reference threshold; sampling for each pixel, based on the comparison, one of the second and third voltage values, and generating an output pixel value based on the sampled one of the second and third voltage values.
Abstract:
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
Abstract:
Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.
Abstract:
An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.
Abstract:
A device for controlling an electroluminescent matrix display by successive selection of its lines, including a column control circuit having circuitry capable of placing, at the beginning of the selection of a line, the display column at a precharge voltage based on the operating voltage of the previous line, the column control circuit also having circuitry capable of modifying the precharge voltage according to the difference between luminance instructions of the previous line and those of the selected line.
Abstract:
A method and a circuit for protecting a numerical quantity contained in an integrated circuit on a first number of bits, in a modular exponentiation computing of a data by the numerical quantity, including: selecting at least one second number included between the unit and said first number minus two; dividing the numerical quantity into at least two parts, a first part including, from the bit of rank null, a number of bits equal to the second number, a second part including the remaining bits; for each part of the quantity, computing a first modular exponentiation of said data by the part concerned and a second modular exponentiation of the result of the first by the FIG. 2 exponentiated to the power of the rank of the first bit of the part concerned; and computing the product of the results of the first and second modular exponentiations.
Abstract:
A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.
Abstract:
A semiconductor device includes an integrated circuit and external electrical connection pads. Each pad includes cavities that are at least partially filled with a material different from the material forming the pads, so as to form inserts.
Abstract:
Detection method and device for a receiver in a digital communication system designed to process a frame comprising a periodic sub-set of length n, said method comprising the following steps:—determining a first vector u having a length n;—determining a second shifted vector v;—calculating a correlation function between said first and second vectors;—calculating a quadratic error function between said first and second vectors;—calculating a first cost function that is a linear combination of both preceding functions and, according to the sign of the result,—calculating a second cost function of frame beginning estimate; and—starting the communication system receiver.