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    Memory Cell With Floating Gate, Coupling Gate And Erase Gate, And Method Of Making Same
    422.
    发明申请
    Memory Cell With Floating Gate, Coupling Gate And Erase Gate, And Method Of Making Same 审中-公开

    公开(公告)号：US20200176460A1

    公开(公告)日：2020-06-04

    申请号：US16208297

    申请日：2018-12-03

    Applicant: Silicon Storage Technology, Inc.

    Inventor： CATHERINE DECOBERT ,  HIEU VAN TRAN ,  NHAN DO

    IPC: H01L27/11521 ,  G11C16/26 ,  G11C16/16 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10

    Abstract: A memory device that includes source and drain regions formed in a semiconductor substrate, with a first channel region of the substrate extending there between. A floating gate is disposed over and insulated from the channel region, wherein the conductivity of the channel region is solely controlled by the floating gate. A control gate is disposed over and insulated from the floating gate. An erase gate is disposed over and insulated from the source region, wherein the erase gate includes a notch that faces and is insulated from an edge of the floating gate. Logic devices are formed on the same substrate. Each logic device has source and drain regions with a channel region extending there between, and a logic gate disposed over and controlling the logic device's channel region.

    High density split-gate memory cell
    424.
    发明授权
    High density split-gate memory cell 有权

    公开(公告)号：US10658027B2

    公开(公告)日：2020-05-19

    申请号：US15002302

    申请日：2016-01-20

    Applicant: Silicon Storage Technology, Inc.

    Inventor： Nhan Do ,  Xian Liu ,  Vipin Tiwari ,  Hieu Van Tran

    IPC: H01L29/76 ,  G11C11/419 ,  G11C16/04 ,  G11C16/14 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11521

    Abstract: A method of forming a memory device that includes forming on a substrate, a first insulation layer, a first conductive layer, a second insulation layer, a second conductive layer, a third insulation layer. First trenches are formed through third insulation layer, the second conductive layer, the second insulation layer and the first conductive layer, leaving side portions of the first conductive layer exposed. A fourth insulation layer is formed at the bottom of the first trenches that extends along the exposed portions of the first conductive layer. The first trenches are filled with conductive material. Second trenches are formed through the third insulation layer, the second conductive layer, the second insulation layer and the first conductive layer. Drain regions are formed in the substrate under the second trenches. A pair of memory cells results, with a single continuous channel region extending between drain regions for the pair of memory cells.

    Method Of Making Split Gate Non-volatile Flash Memory Cell
    428.
    发明申请
    Method Of Making Split Gate Non-volatile Flash Memory Cell 审中-公开

    公开(公告)号：US20200013882A1

    公开(公告)日：2020-01-09

    申请号：US16576348

    申请日：2019-09-19

    Applicant: Silicon Storage Technology, Inc.

    Inventor： Chunming Wang ,  Leo Xing ,  Andy Liu ,  Melvin Diao ,  Xian Liu ,  Nhan Do

    IPC: H01L29/66 ,  H01L21/3213 ,  H01L27/11521 ,  H01L27/11536 ,  H01L27/11531 ,  H01L29/423 ,  H01L49/02

    Abstract: A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region.

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