公开(公告)号：US10002820B2

公开(公告)日：2018-06-19

申请号：US13478815

申请日：2012-05-23

Applicant: Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

Inventor： Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

公开(公告)号：US20140131768A1

公开(公告)日：2014-05-15

申请号：US13672971

申请日：2012-11-09

Applicant: Chun-Lin Chu ,  Shu-Han Hsu ,  Guang-Li Luo ,  Chee-Wee Liu

Inventor： Chun-Lin Chu ,  Shu-Han Hsu ,  Guang-Li Luo ,  Chee-Wee Liu

IPC: H01L29/267 ,  H01L29/12

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L29/32 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.

Abstract translation: 用于半导体器件的桥结构包括半导体衬底和半导体结构层。 半导体结构层形成在半导体衬底的表面上，并且在半导体结构层和半导体衬底之间形成晶格差。 半导体结构层至少包括第一块，至少第二块和至少第三块，其中第一块和第三块结合在半导体衬底的表面上，第二块浮在半导体衬底上 并与第一块和第三块连接。

公开(公告)号：US20120024366A1

公开(公告)日：2012-02-02

申请号：US12926089

申请日：2010-10-26

Applicant: Chee Wee Liu ,  Wen Wei Hsu ,  Tzu Huan Cheng ,  Wei Shuo Ho

Inventor： Chee Wee Liu ,  Wen Wei Hsu ,  Tzu Huan Cheng ,  Wei Shuo Ho

IPC: H01L31/0216 ,  H01L31/18 ,  C23C14/35

CPC classification number: H01L31/0392 ,  H01L31/0322 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1868 ,  Y02E10/541 ,  Y02P70/521

Abstract: A thin film solar cell structure and the fabricating method thereof are disclosed. A passivation layer is embedded into the thin film solar cell structure to be in contact with an absorbing layer. The interface trap density of the absorbing layer is reduced by the surface electric field of the passivation layer. The invention helps improve the power conversion efficiency and protect the absorbing layer.

Abstract translation: 公开了一种薄膜太阳能电池结构及其制造方法。 钝化层嵌入到薄膜太阳能电池结构中以与吸收层接触。 通过钝化层的表面电场减小吸收层的界面陷阱密度。 本发明有助于提高功率转换效率并保护吸收层。

公开(公告)号：US20110284074A1

公开(公告)日：2011-11-24

申请号：US12891721

申请日：2010-09-27

Applicant: Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Chien-Jen Chen ,  Han-Tu Lin ,  Shuo-Wei Liang

Inventor： Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Chien-Jen Chen ,  Han-Tu Lin ,  Shuo-Wei Liang

IPC: H01L31/0376

CPC classification number: H01L31/0747 ,  Y02E10/50

Abstract: A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.

Abstract translation: 光伏电池包括第一掺杂单晶硅衬底，本征非晶硅层，第二掺杂非晶硅层，第一掺杂晶体Ge含量层和一对电极。 第一种掺杂单晶硅衬底具有前表面和后表面。 本征非晶硅层设置在前表面上。 第二类掺杂非晶硅层设置在本征非晶硅层上。 第一类型的掺杂结晶Ge含量层设置在后表面上。 该对电极分别电连接到第二类掺杂非晶硅层和第一掺杂结晶Ge含量层。

公开(公告)号：US08062964B2

公开(公告)日：2011-11-22

申请号：US12853232

申请日：2010-08-09

Applicant: Wen-Fa Tsai ,  Jyong-Fong Liao ,  Yen-Yu Chen ,  Chee Wee Liu ,  Chi-Fong Ai

Inventor： Wen-Fa Tsai ,  Jyong-Fong Liao ,  Yen-Yu Chen ,  Chee Wee Liu ,  Chi-Fong Ai

IPC: H01L21/26

CPC classification number: H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.

Abstract translation: 本公开钝化太阳能电池缺陷。 在制造太阳能电池期间或之后，使用等离子体浸没离子注入（PIII）来修复缺陷。 将氢离子注入到具有不同的能量之和的吸收层中以填充缺陷或表面复合中心的间隙。 因此，太阳能电池缺陷减少，并且载流子随着光伏转换效率的提高而被转移。

公开(公告)号：US20110032765A1

公开(公告)日：2011-02-10

申请号：US12617516

申请日：2009-11-12

Applicant: Yen-Ting Chen ,  Ching-Fang Huang ,  Hung-Chang Sun ,  Chee Wee Liu

Inventor： Yen-Ting Chen ,  Ching-Fang Huang ,  Hung-Chang Sun ,  Chee Wee Liu

IPC: G11C16/04 ,  H01L21/66 ,  G11C11/34

CPC classification number: G11C16/0408 ,  G11C16/02 ,  G11C2211/4016 ,  H01L29/66825 ,  H01L29/685 ,  H01L29/788

Abstract: A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.

Abstract translation: 提供非易失性存储器。 非易失性存储器至少包括一个包括衬底的绝缘体上硅晶体管; 设置在所述基板上的绝缘层; 设置在绝缘层上的有源区; 以及设置在有源区域中并且在读取非易失性存储器时输出相对小的电流的能量屏障装置。

公开(公告)号：US20100024870A1

公开(公告)日：2010-02-04

申请号：US12416369

申请日：2009-04-01

Applicant: Jyun-Jhe Tsai ,  Ying-Jhe Yang ,  Chee Wee Liu

Inventor： Jyun-Jhe Tsai ,  Ying-Jhe Yang ,  Chee Wee Liu

IPC: H01L31/00 ,  H01L21/02

CPC classification number: H01L31/04 ,  H01L31/0248 ,  H01L31/0264 ,  Y02E10/50

Abstract: A structure and a method of the solar cell efficiency improvement by the strain technology are provided. The solar cell has a first surface and a second surfaces which at least a gasket is disposed thereon for supporting the solar cell and being the axle whiling stressing. The method includes the steps of: (a) applying at least a stress on the first surface; (b) generating a supporting force on the second surface; and (c) generating at least a strain in the solar cell. In addition, the present invention also includes a method involving a step of: (a) applying a mechanical stress to the solar cell; (b) generating a tension in the solar cell by at least two materials having different lattice constants; or (c) generating another tension in the solar cell by a shallow trench isolation filler, a high tensile/compressive stress silicon nitride layer and a combination thereof.

Abstract translation: 提供了通过应变技术提高太阳能电池效率的结构和方法。 太阳能电池具有第一表面和第二表面，至少垫圈设置在其上用于支撑太阳能电池并且是轴向应力。 该方法包括以下步骤：（a）在第一表面上施加至少一个应力; （b）在第二表面上产生支撑力; 和（c）在太阳能电池中产生至少一个应变。 另外，本发明还包括以下步骤的方法：（a）向太阳能电池施加机械应力; （b）通过具有不同晶格常数的至少两种材料在太阳能电池中产生张力; 或（c）通过浅沟槽隔离填料，高拉伸/压缩应力氮化硅层及其组合在太阳能电池中产生另一张力。

公开(公告)号：US20080290468A1

公开(公告)日：2008-11-27

申请号：US11937217

申请日：2007-11-08

Applicant: Chee-Wee LIU ,  Y. -T. CHIANG ,  M. H. LEE ,  Y. DENG

Inventor： Chee-Wee LIU ,  Y. -T. CHIANG ,  M. H. LEE ,  Y. DENG

IPC: H01L23/00 ,  H01L21/00

CPC classification number: H01L31/0392 ,  H01L29/7849 ,  H01L31/03926 ,  H01L31/1808 ,  H01L31/1896 ,  H01L33/48 ,  Y02E10/50

Abstract: A method for producing a flexible electronic device is provided. The method comprises steps of providing a flexible substrate, forming an inorganic film on the flexible substrate and etching the inorganic film to obtain an electronic element of the electronic device. In another aspect, a flexible electronic device is provided. The flexible electronic device comprises a flexible substrate and an inorganic film disposed on the flexible substrate and having an electronic element, wherein the electronic element is formed by etching the inorganic film.

Abstract translation: 提供了一种用于制造柔性电子装置的方法。 该方法包括提供柔性基板，在柔性基板上形成无机膜并蚀刻无机膜以获得电子器件的电子元件的步骤。 另一方面，提供一种柔性电子装置。 柔性电子装置包括柔性基板和设置在柔性基板上并具有电子元件的无机膜，其中通过蚀刻无机膜形成电子元件。

公开(公告)号：US20080145979A1

公开(公告)日：2008-06-19

申请号：US11951808

申请日：2007-12-06

Applicant: Ching-Fang HUANG ,  Chee-Zxiang LIU ,  Chee-Wee LIU

Inventor： Ching-Fang HUANG ,  Chee-Zxiang LIU ,  Chee-Wee LIU

IPC: H01L21/336

CPC classification number: H01L29/78603 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/78666 ,  H01L29/78675

Abstract: A method for changing a characteristic of a thin film transistor (TFT) is provided. The method comprises the steps of (1) providing a substrate; (2) forming the TFT having a channel on the substrate; (3) providing a pressure source; and (4) causing the pressure source to form a strain on the channel. The method for changing the characteristic of the TFT can further raise the operational speed thereof.

Abstract translation: 提供了一种用于改变薄膜晶体管（TFT）的特性的方法。 该方法包括以下步骤：（1）提供衬底; （2）在基板上形成具有沟道的TFT; （3）提供压力源; 和（4）使压力源在通道上形成应变。 用于改变TFT的特性的方法可进一步提高其操作速度。

公开(公告)号：US20070126014A1

公开(公告)日：2007-06-07

申请号：US11536025

申请日：2006-09-28

Applicant: Ming-Han Liao ,  Cheng-Yeh Yu ,  Chee Wee Liu

Inventor： Ming-Han Liao ,  Cheng-Yeh Yu ,  Chee Wee Liu

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/34 ,  H01L33/0004

Abstract: A method for manufacturing a light-emitting element with a heterojunction of group IV is provided. The method comprises at least the steps of: (1) providing a silicon substrate having a first and a second surfaces; (2) forming a germanium layer on the first surface; (3) forming a cap layer on the germanium layer; (4) forming a oxidation layer on the cap layer; (5) forming a first conductive layer on the oxidation layer; (6) forming a second conductive layer on the second surface; and (7) respectively forming a conductive wire on the first and second conductive layers. The light-emitting element of MOS semiconductor manufactured by the abovementioned steps is characterized in the emission of long wavelength.

Abstract translation: 提供了具有IV族异质结的发光元件的制造方法。 该方法至少包括以下步骤：（1）提供具有第一和第二表面的硅衬底; （2）在第一表面上形成锗层; （3）在锗层上形成盖层; （4）在盖层上形成氧化层; （5）在氧化层上形成第一导电层; （6）在所述第二表面上形成第二导电层; 和（7）分别在第一和第二导电层上形成导线。 通过上述步骤制造的MOS半导体的发光元件的特征在于长波长的发射。