公开(公告)号：US08877000B2

公开(公告)日：2014-11-04

申请号：US10469592

申请日：2002-02-26

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： C23F1/00 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/5096 ,  H01J37/3244

摘要： A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).

摘要翻译： 描述了一种等离子体处理室，其包括与连续喷淋头喷射孔组合使用的脉冲气体喷射孔/喷嘴。 连续流喷淋头喷射孔引入连续的气体流，同时脉冲气体喷射孔/喷嘴将高压气体循环注入腔室。 在一个实施例中，中央计算机可以监测和控制压力测量装置并利用测量来调整处理参数（例如脉冲持续时间，脉冲重复率和处理气体的脉冲质量流率）。

公开(公告)号：US08852347B2

公开(公告)日：2014-10-07

申请号：US12814278

申请日：2010-06-11

申请人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

发明人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC分类号： C23C16/00 ,  C23C16/52 ,  C23C16/44 ,  H05B3/00 ,  C23C16/455 ,  C23F1/00

CPC分类号： H05B3/00 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/52 ,  H05B2203/014 ,  H05B2203/022

摘要： A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

摘要翻译： 本发明描述了一种用于其中的气体加热装置和处理系统，用于使用气相沉积工艺在基片上沉积薄膜。 气体加热装置包括加热元件阵列，该加热元件阵列具有多个加热元件区域，该多个加热元件区域被配置为在多个加热元件区域中或通过所述多个加热元件区域接收成膜组合物的流动，以便导致成膜组合物的一种或多种成分的热解 加热时。 另外，处理系统可以包括被配置为支撑衬底的衬底保持器。 衬底保持器可以包括后侧气体供应系统，其构造成将热传递气体供应到所述衬底的背面，其中所述背侧气体供应系统被配置为独立地将所述传热气体供应到所述衬底的背侧的多个区域。

公开(公告)号：US08828185B2

公开(公告)日：2014-09-09

申请号：US12772232

申请日：2010-05-02

申请人： Martin Kent ,  Eric J. Strang

发明人： Martin Kent ,  Eric J. Strang

IPC分类号： C23F1/00

CPC分类号： B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

摘要： A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

摘要翻译： 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US08207476B2

公开(公告)日：2012-06-26

申请号：US12631278

申请日：2009-12-04

申请人： Yuji Tsukamoto ,  Eric J. Strang

发明人： Yuji Tsukamoto ,  Eric J. Strang

IPC分类号： H05B1/02 ,  H05B3/68 ,  F27B5/06 ,  F27B5/18

CPC分类号： F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

摘要翻译： 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US08036869B2

公开(公告)日：2011-10-11

申请号：US10673467

申请日：2003-09-30

申请人： Eric J. Strang ,  Andrej Mitrovic

发明人： Eric J. Strang ,  Andrej Mitrovic

IPC分类号： G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC分类号： G05B19/41885 ,  Y02P90/26 ,  Y02P90/86

摘要： A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.

摘要翻译： 一种用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，输入与半导体处理工具相关的第一原理物理模型，使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果。 第一原理模拟结果用于建立经验模型，并选择第一原理模拟结果和经验模型中的至少一个来控​​制半导体处理工具执行的过程。

公开(公告)号：US07732227B2

公开(公告)日：2010-06-08

申请号：US11517389

申请日：2006-09-08

申请人： Eric J. Strang ,  Richard Parsons

发明人： Eric J. Strang ,  Richard Parsons

IPC分类号： H01L21/66 ,  G01R31/26 ,  C23C14/54 ,  C23F1/00

CPC分类号： H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

摘要： A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

摘要翻译： 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

公开(公告)号：US07544269B2

公开(公告)日：2009-06-09

申请号：US10490850

申请日：2002-10-24

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01L21/67253 ,  G01B15/02 ,  G01B15/04 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069

摘要： A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128). A method of monitoring electron density in the processing system is provided that includes loading a wafer, setting a frequency of a microwave signal to a resonance frequency, and measuring a first voltage of the signal during a vacuum condition. The method further includes processing the wafer (114), measuring a second voltage of the signal during a plasma condition, and determining an electron density from a difference between the second voltage and the first voltage.

摘要翻译： 一种等离子体处理系统，包括具有衬底保持器（128）和监视系统（130）的等离子体室（120）。 监测系统（130）包括具有与保持器（128）相对的凹表面（142）的微波反射镜（140），并且电源（160）耦合到其上，产生垂直于晶片平面（129）的微波信号， （128）。 检测器（170）耦合到反射镜（140）并且测量腔室（120）内的信号的真空谐振电压。 提供一种控制系统（180），其在等离子体状态期间测量真空状态期间的第一电压和第二电压，并根据第二电压和第一电压之间的差确定电子密度。 处理系统（110）可以包括多个监控系统（130a，130b，130c），其具有设置在与衬底保持器（128）相对的空间阵列中的反射镜（140a，140b，140c）。 提供了一种在处理系统中监测电子密度的方法，包括加载晶片，将微波信号的频率设置为谐振频率，以及在真空条件期间测量信号的第一电压。 该方法还包括处理晶片（114），在等离子体状态期间测量信号的第二电压，以及从第二电压和第一电压之间的差确定电子密度。

公开(公告)号：US07263447B2

公开(公告)日：2007-08-28

申请号：US10495864

申请日：2003-01-30

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： C23C16/00 ,  G01F1/00

CPC分类号： H01J37/32275 ,  H01J37/32192 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253

摘要： An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

摘要翻译： 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器，其将测量的激励信号与正常激励信号进行比较，以便确定材料处理设备的状态。

公开(公告)号：US07233878B2

公开(公告)日：2007-06-19

申请号：US10767347

申请日：2004-01-30

申请人： Andrej S. Mitrovic ,  Eric J. Strang

发明人： Andrej S. Mitrovic ,  Eric J. Strang

IPC分类号： G01N21/88

CPC分类号： G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

摘要： A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

摘要翻译： 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US06960887B2

公开(公告)日：2005-11-01

申请号：US10359556

申请日：2003-02-07

申请人： Eric J. Strang ,  Wayne L. Johnson ,  Robert G. Hostetler ,  Steven T. Fink

发明人： Eric J. Strang ,  Wayne L. Johnson ,  Robert G. Hostetler ,  Steven T. Fink

IPC分类号： H01J37/32 ,  H01J7/24 ,  H01L21/302 ,  H05B31/26

CPC分类号： H01J37/32449 ,  H01J37/32623 ,  H01J37/32834

摘要： A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.

摘要翻译： 等离子体反应器或真空处理装置设置有孔板组件。 孔板组件包括上板和下板。 每个板配置有通孔。 上下孔板可独立地相对于彼此旋转。 板在真空室内布置有排放反应器，使得卡盘组件设置在孔板组件的开口内。 孔板组件进一步构造成具有与真空室的内壁形状基本匹配的周边形状。