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    Forced cooling circulation system for drilling mud
    42.
    发明授权
    Forced cooling circulation system for drilling mud 有权
    用于钻井泥浆的强制冷却循环系统

    公开(公告)号：US09062509B2

    公开(公告)日：2015-06-23

    申请号：US13575941

    申请日：2010-04-15

    Applicant: Youhong Sun ,  Jiangpeng Zhao ,  Wei Guo ,  Huiwen Xu ,  Qinghua Wang ,  Chen Chen ,  Guosheng Li ,  Rui Jia ,  Jianguo Zhao ,  Jun Xue

    Inventor： Youhong Sun ,  Jiangpeng Zhao ,  Wei Guo ,  Huiwen Xu ,  Qinghua Wang ,  Chen Chen ,  Guosheng Li ,  Rui Jia ,  Jianguo Zhao ,  Jun Xue

    IPC: E21B36/00 ,  E21B21/01 ,  F25D29/00 ,  F25D17/02

    CPC classification number: E21B36/001 ,  E21B21/01 ,  F25D17/02 ,  F25D29/00

    Abstract: A forced cooling circulation system for drilling mud, which includes a refrigeration unit (1), a secondary refrigerant tank (4), a coaxial convection heat exchanger (12) for mud and a mud pond (17), is disclosed. The refrigeration unit (1) is in connection with the secondary refrigerant tank (4) and the coaxial convection heat exchanger (12) for mud via a pump (2), and the coaxial convection heat exchanger (12) for mud is in connection with the mud pond (17) via a pump (15) and pipelines. Heat exchange tubes of the coaxial convection heat exchanger (12) for mud are disposed as a double-layer structure or a multi-layer structure, and the inner heat exchange tubes (23) are mounted inside of the outer heat exchange tubes (25). The secondary refrigerant or the mud is circulated in the annular space between the inner heat exchange tubes (23) and the outer heat exchange tubes (25), and the mud or the secondary refrigerant is circulated in the inner tubes (23). The flow of the circulated mud is opposite to that of the circulated secondary refrigerant, and insulation material (24) is painted on the external wall of the outer tubes (25).

    Abstract translation: 公开了一种用于钻井泥浆的强制冷却循环系统，其包括制冷单元（1），二次制冷剂罐（4），用于泥浆的同轴对流热交换器（12）和泥浆池（17）。 制冷单元（1）通过泵（2）与二级制冷剂罐（4）和用于泥浆的同轴对流热交换器（12）连接，用于泥浆的同轴对流热交换器（12）与 泥浆池（17）通过泵（15）和管道。 用于泥浆的同轴对流换热器（12）的换热管被设置为双层结构或多层结构，并且内部换热管（23）安装在外部换热管（25）的内部， 。 二次制冷剂或泥浆在内部热交换管23和外部热交换管25之间的环形空间中循环，泥浆或二次制冷剂在内管23中循环。 循环泥浆的流动与循环的二次制冷剂的流动相反，绝缘材料（24）涂在外管（25）的外壁上。

    Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices
    47.
    发明申请
    Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices 有权
    双端非易失性存储器件中的电极扩散

    公开(公告)号：US20110204313A1

    公开(公告)日：2011-08-25

    申请号：US13100657

    申请日：2011-05-04

    Applicant: Xiying CHEN ,  Huiwen XU ,  Chuan-bin PAN

    Inventor： Xiying CHEN ,  Huiwen XU ,  Chuan-bin PAN

    IPC: H01L45/00 ,  B82Y99/00

    CPC classification number: H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1675

    Abstract: A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.

    Abstract translation: 非易失性存储器件包括多个支柱，其中多个支柱中的每个支柱包含含有转向元件和存储元件的非易失性存储单元，并且每个的顶角或底角中的至少一个 多个柱子是圆形的。 制造非易失性存储器件的方法包括形成器件层堆叠，以及图案化堆叠以形成多个柱，其中多个柱中的每个柱包含含有转向元件和存储器的非易失性存储单元 并且其中所述多个柱中的每一个的顶角或底角中的至少一个是圆形的。

    Methods to obtain low k dielectric barrier with superior etch resistivity
    48.
    发明授权
    Methods to obtain low k dielectric barrier with superior etch resistivity 有权
    获得具有优异蚀刻电阻率的低k电介质阻挡层的方法

    公开(公告)号：US07964442B2

    公开(公告)日：2011-06-21

    申请号：US11869416

    申请日：2007-10-09

    Applicant: Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    Inventor： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    IPC: H01L51/40

    CPC classification number: H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

    Abstract: The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

    Abstract translation: 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

    MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME
    49.
    发明申请
    MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME 有权
    包含基于碳的可逆电阻开关元件的存储器单元与转向元件兼容，以及形成其的方法

    公开(公告)号：US20110095258A1

    公开(公告)日：2011-04-28

    申请号：US12835236

    申请日：2010-07-13

    Applicant: Huiwen Xu ,  Er-Xuan Ping ,  Xiying Costa ,  Thomas J. Kwon

    Inventor： Huiwen Xu ,  Er-Xuan Ping ,  Xiying Costa ,  Thomas J. Kwon

    IPC: H01L45/00 ,  H01L21/02

    CPC classification number: H01L45/1273 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1616 ,  H01L45/1691

    Abstract: Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross-sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross-sectional area smaller than the first cross-sectional area.

    Abstract translation: 提供了存储单元和形成这种存储单元的方法，其包括耦合到具有增加的电阻率的碳基可逆电阻率切换材料的转向元件和小于转向元件的最大电流能力的开关电流 用于控制通过碳基可逆电阻率开关材料的电流。 在具体实施例中，根据本发明的方法和装置形成具有第一横截面面积的转向元件，例如二极管，该第二横截面面积与可逆电阻率开关材料（例如aC）耦合，具有具有第二十字 切片面积小于第一横截面积。

    METHODS FOR INCREASED ARRAY FEATURE DENSITY
    50.
    发明申请
    METHODS FOR INCREASED ARRAY FEATURE DENSITY 有权
    增加阵列特征密度的方法

    公开(公告)号：US20100193916A1

    公开(公告)日：2010-08-05

    申请号：US12754602

    申请日：2010-04-05

    Applicant: Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

    Inventor： Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

    IPC: H01L27/10 ,  H01L21/308

    CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/101 ,  H01L27/1021

    Abstract: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays.

    Abstract translation: 实施例通常涉及制造半导体器件的方法，更具体地，涉及制造半导体柱结构的方法以及使用选择性或方向性间隙填充来增加阵列特征图案密度。 该技术可应用于各种材料，可应用于制作单片二维或三维存储阵列。

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