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    USE OF CARBON NANOTUBES FOR PREVENTING OR TREATING BRAIN DISEASE
    41.
    发明申请
    USE OF CARBON NANOTUBES FOR PREVENTING OR TREATING BRAIN DISEASE 审中-公开
    用于预防或治疗脑疾病的碳纳米管的使用

    公开(公告)号：US20130195937A1

    公开(公告)日：2013-08-01

    申请号：US13809617

    申请日：2011-07-14

    Applicant: Yoonhwa Jeong ,  Hyun Jung Lee ,  Do Yeon Lee ,  Yoo Hun Noh ,  Do Hee Kim ,  Ok Hyeon Kim ,  Ji Ae Park ,  Jiwon Lee

    Inventor： Yoonhwa Jeong ,  Hyun Jung Lee ,  Do Yeon Lee ,  Yoo Hun Noh ,  Do Hee Kim ,  Ok Hyeon Kim ,  Ji Ae Park ,  Jiwon Lee

    IPC: A61K33/44 ,  A61K31/166 ,  A61K31/235 ,  A61K9/00 ,  A61K31/192

    CPC classification number: A61K33/44 ,  A61B5/04001 ,  A61B5/04002 ,  A61B5/4082 ,  A61B5/4848 ,  A61K9/0092 ,  A61K31/166 ,  A61K31/192 ,  A61K31/235

    Abstract: A method for preventing or treating a brain nervous disease includes administering to a subject in need thereof a therapeutically effective amount of a carbon nanotube, wherein the nervous disease is a brain disease or a traumatic central nervous system injury. The composition of the present invention enables patients to recover from physical damage to the brain, exhibits superior efficacy for inhibiting the onset of Parkinson's disease and strokes in animal models for Parkinson's disease and strokes, and the cytotoxic effects of beta amyloid in beta amyloid toxicity tests. Therefore, the composition of the present invention can be effectively used in the preparation of medicine for protecting cranial nerves, therapeutic agents for preventing or treating brain disease, or therapeutic agents for treating traumatic injuries to the central nervous system.

    Abstract translation: 用于预防或治疗脑神经疾病的方法包括向有需要的受试者施用治疗有效量的碳纳米管，其中所述神经疾病是脑疾病或创伤性中枢神经系统损伤。 本发明的组合物使得患者能够从对脑的物理损伤中恢复，在帕金森病和中风的动物模型中显示出优异的抑制帕金森病发作和中风的功效，以及β淀粉样蛋白在β淀粉样蛋白毒性试验中的细胞毒性作用 。 因此，本发明的组合物可以有效地用于制备用于保护颅神经的药物，用于预防或治疗脑部疾病的治疗剂，或用于治疗对中枢神经系统的创伤性损伤的治疗剂。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    43.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20120135576A1

    公开(公告)日：2012-05-31

    申请号：US13242784

    申请日：2011-09-23

    Applicant: Hyun-Jung Lee ,  Young-Pil Kim ,  Jin-Bum Kim ,  Sang-Bom Kang ,  Kwan-Yong Lim

    Inventor： Hyun-Jung Lee ,  Young-Pil Kim ,  Jin-Bum Kim ,  Sang-Bom Kang ,  Kwan-Yong Lim

    IPC: H01L21/336

    CPC classification number: H01L29/66545 ,  H01L29/1054 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/7849

    Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the gate structure, respectively; forming a first semiconductor pattern in the first and second trenches; removing the dummy gate pattern to expose a portion of the channel region; forming a recessed channel region by recessing the portion of the channel region; and forming a second semiconductor pattern in the recessed region.

    Abstract translation: 提供半导体器件和制造半导体器件的方法。 该方法包括提供具有沟道区的衬底; 在基板上形成包括虚拟栅极图案的栅极结构; 通过分别在栅极结构的两侧凹陷衬底来形成第一和第二沟槽; 在所述第一和第二沟槽中形成第一半导体图案; 去除伪栅极图案以暴露沟道区域的一部分; 通过使所述通道区域的所述部分凹陷来形成凹陷通道区域; 以及在凹陷区域中形成第二半导体图案。

    METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE
    44.
    发明申请
    METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE 审中-公开
    制造应变半导体器件的方法

    公开(公告)号：US20120034749A1

    公开(公告)日：2012-02-09

    申请号：US13197658

    申请日：2011-08-03

    Applicant: Kwan-Yong LIM ,  Chung-Geun Koh ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim ,  Tae-Ho Cha

    Inventor： Kwan-Yong LIM ,  Chung-Geun Koh ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim ,  Tae-Ho Cha

    IPC: H01L21/336

    CPC classification number: H01L21/823412 ,  H01L21/823807 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7847

    Abstract: A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed.

    Abstract translation: 可以通过在衬底上形成栅极结构并在栅极结构和衬底上形成扩散阻挡层来提供制造半导体器件的方法.A应力层可以形成在包含金属氮化物或金属的扩散阻挡层上 具有与其相关联的氮或氧浓度的氧化物。 应力层可以被加热以将应力层转变成拉伸应力层，以减小应力层中的氮或氧的浓度。 可以去除拉伸应力层和扩散阻挡层。

    Field emission device (FED)
    47.
    发明申请
    Field emission device (FED) 审中-公开
    场发射装置（FED）

    公开(公告)号：US20050236953A1

    公开(公告)日：2005-10-27

    申请号：US11107846

    申请日：2005-04-18

    Applicant: Jeong-Hee Lee ,  Tae-Won Jeong ,  Won-Seok Kim ,  Sang-Hyun Lee ,  Hyun-Jung Lee ,  Jeong-Na Huh

    Inventor： Jeong-Hee Lee ,  Tae-Won Jeong ,  Won-Seok Kim ,  Sang-Hyun Lee ,  Hyun-Jung Lee ,  Jeong-Na Huh

    IPC: H01J1/304 ,  H01J1/02 ,  H01J1/30 ,  H01J3/02

    CPC classification number: H01J3/022 ,  B82Y10/00 ,  H01J1/3042 ,  H01J2201/30469

    Abstract: A Field Emission Device (FED) includes an emitter formed on a cathode electrode and including Carbon NanoTubes (CNTs), and a gate electrode to extract electrons from the emitter. In addition, a RuOx layer or a PdOx layer is coated on the emitter to protect the CNTs and to stabilize the emission from the CNTs. A stabilizer layer to stabilize an emission structure and to protect emission ends is coated on the surface of a CNT emitter or the surfaces of the CNTs, more specifically, the emission ends of the CNTs, in order to prevent abrasion of the CNTs caused by an excess current or an emission process.

    Abstract translation: 场发射装置（FED）包括形成在阴极上并包括碳纳米管（CNT）的发射极和从发射极提取电子的栅电极。 此外，RuOx层或PdOx层涂覆在发射极上以保护CNT并稳定CNT的发射。 用于稳定发射结构并保护发射端的稳定剂层被涂覆在CNT发射体或CNT的表面，更具体地，CNT的发射端的表面上，以防止CNT引起的碳纳米管的磨损 过电流或发射过程。

    Homezone call forwarding service method
    48.
    发明授权
    Homezone call forwarding service method 失效
    家乡呼叫转接服务方式

    公开(公告)号：US06944445B2

    公开(公告)日：2005-09-13

    申请号：US09849574

    申请日：2001-05-04

    Applicant: Hyun-Jung Lee

    Inventor： Hyun-Jung Lee

    IPC: H04M3/54 ,  H04W4/02 ,  H04M3/42 ,  H04Q7/20

    CPC classification number: H04W4/02 ,  H04M3/54 ,  H04M2207/18

    Abstract: Disclosed is a method for performing a call forwarding service on a PSTN number as well as an MDN number in a homezone. By including additional parameters in the setup and transfer messages communicated between an originating mobile switching center (MSC), a home location register (HLR), and a terminating MSC, the method can perform the call forwarding service in a homezone. The additional parameters include number identification information and termination triggers that enable the homezone call forwarding service.

    Abstract translation: 公开了一种用于在PSTN号码上执行呼叫转移服务以及在家乡区域中的MDN号码的方法。 通过在始发移动交换中心（MSC），归属位置寄存器（HLR）和终止MSC之间传送的建立和传送消息中包括附加参数，该方法可以在归属区域中执行呼叫转移服务。 额外的参数包括号码识别信息和终止触发器，可启用家乡域呼叫转接服务。

    Method for predicting demand using visual schema of product, device therefor and computer program therefor
    50.
    发明授权
    Method for predicting demand using visual schema of product, device therefor and computer program therefor 有权

    公开(公告)号：US11922443B2

    公开(公告)日：2024-03-05

    申请号：US17462730

    申请日：2021-08-31

    Applicant: Hyun Jung Lee ,  Gibum Park

    Inventor： Hyun Jung Lee

    IPC: G06Q30/00 ,  G06N3/00 ,  G06N3/08 ,  G06Q30/0204

    CPC classification number: G06Q30/0204 ,  G06N3/08

    Abstract: The present disclosure relates to a method for predicting demand using a visual schema of a product, a device therefor, and a computer program therefor. The demand predicting method includes the operations of: creating visual schemas in which attributes of a product are digitized; analyzing the visual schemas and creating visual schema analysis data which are data relating to the attributes of the product; creating prediction data which are data obtained as a result of demand prediction analysis by attributes of the product using the visual schema analysis data; and creating visual narrative data expressing the prediction data into correlation between products or customers, and describing demand prediction.

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