公开(公告)号：US20100295017A1

公开(公告)日：2010-11-25

申请号：US12851607

申请日：2010-08-06

Applicant: Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/04 ,  H01L33/02 ,  H01L33/30

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US20100068872A1

公开(公告)日：2010-03-18

申请号：US12263555

申请日：2008-11-03

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

IPC: H01L21/205

CPC classification number: H01L21/0237 ,  C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

Abstract: The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.

Abstract translation: 本发明提供一种制造含有氮化镓（GaN）的单晶衬底的方法，包括以下步骤。 首先，在主体基板上形成多个含有GaN的岛。 接下来，使用包含GaN的多个岛作为掩模来蚀刻衬底并形成不均匀的主体衬底。 然后，在不平坦的主体衬底上进行外延，使含有GaN的岛尺寸增长并且合并成含有GaN的连续单晶膜。 最后，从不均匀的主体衬底上分离含有GaN的单晶膜，得到含有GaN的单晶衬底。 根据本发明，可以节省加工时间，提高成品率。

公开(公告)号：US20090320924A1

公开(公告)日：2009-12-31

申请号：US12187716

申请日：2008-08-07

Applicant: Jen-inn CHYI ,  Cheng-yu Chen

Inventor： Jen-inn CHYI ,  Cheng-yu Chen

IPC: H01L31/06 ,  H01L31/0264

CPC classification number: H01L31/035281 ,  H01L31/03046 ,  H01L31/0735 ,  Y02E10/544

Abstract: A solar cell structure includes a substrate, a buffer layer on the substrate, a type II band alignment nanostructure layer on the buffer layer, a p-type area and an n-type area defined on the type II band alignment nanostructure layer, and a p-type metal electrode and an n-type metal electrode coated onto the p-type and n-type areas, respectively. The type II band alignment nanostructure layer is provided for distributing an electron current and a hole current in different channels to minimize the recombination of electrons and holes and improve the photoelectric conversion efficiency of the solar cell significantly.

Abstract translation: 太阳能电池结构包括基板，衬底上的缓冲层，缓冲层上的II型带取向纳米结构层，限定在II型带取向纳米结构层上的p型区域和n型区域，以及 p型金属电极和n型金属电极分别涂覆在p型和n型区域上。 II型带取向纳米结构层用于在不同通道中分配电子电流和空穴电流，以最小化电子和空穴的复合，并显着提高太阳能电池的光电转换效率。

公开(公告)号：US20090159910A1

公开(公告)日：2009-06-25

申请号：US11963558

申请日：2007-12-21

Applicant: Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L21/306 ,  H01L33/00

CPC classification number: H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US07462505B2

公开(公告)日：2008-12-09

申请号：US11063479

申请日：2005-02-23

Applicant: Chia Ming Lee ,  Tsung Liang Cheng ,  I Ling Chen ,  Yu Chuan Liu ,  Jen Inn Chyi

Inventor： Chia Ming Lee ,  Tsung Liang Cheng ,  I Ling Chen ,  Yu Chuan Liu ,  Jen Inn Chyi

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract translation: 在形成结晶GaN基材料的方法中，在第一温度下在基板上形成第一成核层，随后在与第一温度不同的第二温度下形成第二成核层。 第一和第二成核层由Al x In y Ga（1-x-y）N组成。 随后，在第二成核层上生长一层结晶的GaN基化合物外延生长。

公开(公告)号：US07445949B2

公开(公告)日：2008-11-04

申请号：US10710843

申请日：2004-08-06

Applicant: Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01L21/00

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/2214

Abstract: A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.

Abstract translation: 提供一种制造半导体激光器件的方法。 首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。 此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。 在第二掩模层上形成第三掩模层。 暴露的第二掩模层被去除。 使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。 去除第三掩模层和剩余的第二掩模层以形成脊结构。 在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。 导电层形成在外延结构上，使得其与突出区域的顶表面接触。

公开(公告)号：US20070298592A1

公开(公告)日：2007-12-27

申请号：US11514332

申请日：2006-09-01

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01L21/20

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/04 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664

Abstract: A gallium nitride substrate is originally grown above a silicon substrate. The present invention easily separates the gallium nitride substrate from the silicon substrate. And the separation is done with a simple etching so that the cost is low.

Abstract translation: 氮化镓衬底最初在硅衬底上生长。 本发明容易将氮化镓衬底与硅衬底分离。 并且通过简单的蚀刻进行分离，从而成本低。

公开(公告)号：US07227192B2

公开(公告)日：2007-06-05

申请号：US10815091

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L29/22

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 发光装置包括：发光单元，包括多个第一连接焊盘;基板，包括多个第二连接焊盘;以及多个导电凸块，其将所述发光单元的第一连接焊盘连接到 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US07166483B2

公开(公告)日：2007-01-23

申请号：US10870347

申请日：2004-06-17

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接。

公开(公告)号：US06720570B2

公开(公告)日：2004-04-13

申请号：US10123287

申请日：2002-04-17

Applicant: Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L2906

CPC classification number: H01L33/025 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/14

Abstract: According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.

Abstract translation: 根据本发明的优选实施例，提供了一种新颖且最佳的半导体发光器件，其包括基底，共同设置在基底上的n层，n + +层，​​其非常广泛地并且在 n层。 此外，根据本发明，p +层共同设置在LED的n ++层上，其中p层进一步同时布置在p +层上。 p包层共同设置在p层上。 多量子阱（MQW）层共同设置在p包覆层上，并且n包覆层进一步同时布置在MQW层上。 第n层被共同设置在n包层上。 根据本发明，n + +层共同地布置在LED的第二n层上。 在部分蚀刻该器件之后，在n层的表面上非广泛地形成n电极，n +电极在n +层上非广泛地（无蚀刻）形成。