公开(公告)号：US20070082230A1

公开(公告)日：2007-04-12

申请号：US10557665

申请日：2004-05-24

Applicant: Jing Shi ,  Valy Vardeny

Inventor： Jing Shi ,  Valy Vardeny

IPC: G11B5/39

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/091 ,  G11B5/29 ,  G11B5/31 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/005 ,  H01F10/1936 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3281 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1107

Abstract: The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed.

Abstract translation: 自旋阀中的间隔物被有机层代替，允许许多应用，包括发光结构。 本发明表明，有机材料的自旋相干性足够长，即使穿过较厚的被动屏障，载体也不会失去其自旋记忆。 公开了制造有机自旋阀装置的至少三种方法，其中解决了与沉积铁磁（FM）和有机层有关的困难。

公开(公告)号：US06376260B1

公开(公告)日：2002-04-23

申请号：US09825705

申请日：2001-04-05

Applicant: Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

Inventor： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

IPC: H01L2100

CPC classification number: H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

Abstract: An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14) , a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3

Abstract translation: 一种用于磁性元件的改进和新颖的制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。 第一电极（14）包括具有厚度t1的固定铁磁层（26）。 包括第二电极（18）并且包括具有厚度t2的自由铁磁层（28）。 间隔层（16）位于固定铁磁层（26）和自由铁磁层（28）之间，隔离层（16）的厚度为t3，其中0.25t3

公开(公告)号：US06307241B1

公开(公告)日：2001-10-23

申请号：US08475235

申请日：1995-06-07

Applicant: David D. Awschalom ,  Pierre M. Petroff ,  Jing Shi ,  James M. Kikkawa

Inventor： David D. Awschalom ,  Pierre M. Petroff ,  Jing Shi ,  James M. Kikkawa

IPC: H01L2982

CPC classification number: B82Y25/00 ,  H01F1/009 ,  H01F1/405 ,  H01F10/193

Abstract: Submicron ferromagnets, of selected size and spacing, are introduced into semiconductor by means of ion implantation and subsequent heat treatments. The resulting semiconductor contains ferromagnets at high density and which exhibit Curie temperatures exceeding room temperature. The semiconductor retains its intrinsic physical properties, such as optical and transport properties, after incorporation of the ferromagnetic nanostructures.

Abstract translation: 选择尺寸和间距的亚微米铁磁体通过离子注入和随后的热处理引入半导体。 所得的半导体包含高密度的铁磁体，其居里温度超过室温。 在掺入铁磁性纳米结构之后，半导体保留其固有的物理性质，例如光学和传输性质。

公开(公告)号：US06292389B1

公开(公告)日：2001-09-18

申请号：US09356864

申请日：1999-07-19

Applicant: Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

Inventor： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

IPC: H01L2976

CPC classification number: H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

Abstract: An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3

Abstract translation: 一种用于磁性元件的改进和新颖的制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。 第一电极（14）包括具有厚度t1的固定铁磁层（26）。 包括第二电极（18）并且包括具有厚度t2的自由铁磁层（28）。 间隔层（16）位于固定铁磁层（26）和自由铁磁层（28）之间，隔离层（16）的厚度为t3，其中0.25t3

公开(公告)号：US5757695A

公开(公告)日：1998-05-26

申请号：US795488

申请日：1997-02-05

Applicant: Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani

Inventor： Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani

IPC: G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/10

CPC classification number: G11C11/5607 ,  G11C11/15 ,  G11C11/16 ,  G11C2211/5616

Abstract: A multi-layer magnetic memory cell is provided, with magnetic vectors aligned along a length of the cell. To align the magnetic end vectors, an ellipsoidal shape is formed at the ends of the memory cell. Magnetic vectors aligned along the length prevent from forming high fields and magnetic poles at the discontinuity or ends of the layers. The memory cell with the ellipsoidal shape shows a constant magnetic resistance of the magnetic cell when a magnetic field is applied to the cell and attains a reduction of power consumption for the magnetic cell.

Abstract translation: 提供了多层磁存储单元，其中磁矢量沿单元的长度排列。 为了对准磁端向量，在存储单元的端部形成椭圆形状。 沿着长度排列的磁矢量防止在层的不连续或端部处形成高场和磁极。 具有椭圆形状的存储单元在磁场施加到电池并且降低磁性单元的功耗时显示出磁性单元的恒定的磁阻。

公开(公告)号：US09012279B2

公开(公告)日：2015-04-21

申请号：US13613236

申请日：2012-09-13

Applicant: Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

Inventor： Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7371

Abstract: A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.

Abstract translation: 公开了一种SiGe HBT，其包括：硅衬底; 形成在硅衬底中的浅沟槽场氧化物; 形成在每个浅沟槽场氧化物的底部的伪掩埋层; 形成在所述硅衬底的表面下方的集电极区域，所述集电极区域夹在所述浅沟槽场氧化物之间和所述伪埋层之间; 形成在每个浅沟槽场氧化物上方的多晶硅栅极，其厚度大于150nm; 多晶硅栅极和集电极区域上的基极区域; 发射极区隔离氧化物; 并且发射极区域上的发射极区域隔离氧化物和基极区域的一部分。 多晶硅栅极通过CMOS工艺中的MOSFET的栅极多晶硅工艺形成。 还公开了制造SiGe HBT的方法。

公开(公告)号：US20120324389A1

公开(公告)日：2012-12-20

申请号：US13181496

申请日：2011-07-12

Applicant: Jing-Shi Meng

Inventor： Jing-Shi Meng

IPC: G06F3/048

CPC classification number: G01C21/3682

Abstract: A storage medium storing computer readable program, a computer program product, a navigation apparatus and a control method thereof are disclosed. The navigation apparatus comprises a display unit, an input unit and a control unit. The display unit displays an electronic map and a point of interest (POI) cluster, the POI cluster includes a plurality of points of interest, and the input unit correspondingly generates a first operation signal according to a user's manipulation on the POI cluster. The control unit controls the display unit displaying the plurality of points of interest around the POI cluster according to the first operation signal.

Abstract translation: 公开了存储计算机可读程序，计算机程序产品，导航装置及其控制方法的存储介质。 导航装置包括显示单元，输入单元和控制单元。 显示单元显示电子地图和兴趣点（POI）群集，POI群集包括多个兴趣点，并且输入单元根据用户对POI群集的操纵相应地产生第一操作信号。 控制单元根据第一操作信号控制显示单元显示POI簇周围的多个兴趣点。

公开(公告)号：US08315065B2

公开(公告)日：2012-11-20

申请号：US12568017

申请日：2009-09-28

Applicant: Jing Shi ,  Hiren D. Thacker ,  Ashok V. Krishnamoorthy

Inventor： Jing Shi ,  Hiren D. Thacker ,  Ashok V. Krishnamoorthy

IPC: H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10

CPC classification number: H05K3/303 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/49838 ,  H01L2924/0002 ,  H05K3/325 ,  H05K2201/0311 ,  H05K2201/09036 ,  H05K2201/1059 ,  H05K2201/209 ,  H05K2203/167 ,  Y02P70/613 ,  Y10T29/49126 ,  H01L2924/00

Abstract: A multi-chip module (MCM) is described. This MCM includes at least two substrates that are remateably mechanically coupled by positive and negative features on facing surfaces of the substrates. These positive and negative features may mate and self-lock with each other. For example, the positive features on one of the surfaces may include pairs of counterposed micro-springs, and the negative features may include pits or grooves on the other surface. When the substrates are mechanically coupled, a given pair of positive features may provide a force in a plane of the other surface. Furthermore, by compressing the MCM so that the surfaces of the substrates are pushed toward each other, the mechanical coupling may be released.

Abstract translation: 描述了多芯片模块（MCM）。 该MCM包括至少两个基板，其通过在基板的相对表面上的正和负特征可重新机械耦合。 这些积极和消极的特征可以彼此交配和自锁。 例如，其中一个表面上的阳性特征可以包括成对的相对的微弹簧，并且负特征可以包括在另一个表面上的凹坑或凹槽。 当基板机械耦合时，给定的一对正特征可以在另一表面的平面中提供力。 此外，通过压缩MCM使得基板的表面彼此推动，可以释放机械联接。

公开(公告)号：US20110243893A1

公开(公告)日：2011-10-06

申请号：US13026173

申请日：2011-02-11

Applicant: Robert C. Axtell ,  Lawrence Steinman ,  May H. Han ,  Brigit A. de Jong ,  Chander Raman ,  Michael Walker ,  Jing Shi

Inventor： Robert C. Axtell ,  Lawrence Steinman ,  May H. Han ,  Brigit A. de Jong ,  Chander Raman ,  Michael Walker ,  Jing Shi

IPC: A61K38/21 ,  A61K38/02 ,  A61K31/225 ,  A61K39/395 ,  A61P29/00 ,  A61P25/00 ,  G06F19/00

CPC classification number: A61K31/225 ,  A61K31/18 ,  G01N33/6863 ,  G01N33/6896 ,  G01N2333/54 ,  G01N2800/285 ,  Y02A90/26

Abstract: Compositions and methods are provided for prognostic classification of inflammatory diseases, e.g. inflammatory demyelinating disease, patients into subtypes, which subtypes are informative of the patient's need for therapy and responsiveness to a therapy of interest. The patterns of cytokines provides for a signature pattern that can identify patients likely to benefit from therapeutic intervention as well as discriminate patients that have a high probability of responsiveness to a therapy from those that have a low probability of responsiveness. Assessment of this signature pattern thus allows improved methods of care. In one embodiment of the invention, the autoimmune disease is multiple sclerosis or neuromyelitis optica.

Abstract translation: 提供组合物和方法用于炎性疾病的预后分类，例如 炎症性脱髓鞘疾病，患者进入亚型，哪些亚型对患者的治疗需求和对感兴趣的治疗的反应有信息。 细胞因子的模式提供了一种能够识别可能受益于治疗干预的患者的特征模式，并且将具有高反应概率的治疗反应能力高的患者区分开来。 因此，这种签名模式的评估允许改进护理方法。 在本发明的一个实施方案中，自身免疫性疾病是多发性硬化症或神经性脊髓炎。

公开(公告)号：US20110075380A1

公开(公告)日：2011-03-31

申请号：US12568017

申请日：2009-09-28

Applicant: Jing Shi ,  Hiren D. Thacker ,  Ashok V. Krishnamoorthy

Inventor： Jing Shi ,  Hiren D. Thacker ,  Ashok V. Krishnamoorthy

IPC: H05K1/14 ,  H05K3/36

CPC classification number: H05K3/303 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/49838 ,  H01L2924/0002 ,  H05K3/325 ,  H05K2201/0311 ,  H05K2201/09036 ,  H05K2201/1059 ,  H05K2201/209 ,  H05K2203/167 ,  Y02P70/613 ,  Y10T29/49126 ,  H01L2924/00

Abstract: A multi-chip module (MCM) is described. This MCM includes at least two substrates that are remateably mechanically coupled by positive and negative features on facing surfaces of the substrates. These positive and negative features may mate and self-lock with each other. For example, the positive features on one of the surfaces may include pairs of counterposed micro-springs, and the negative features may include pits or grooves on the other surface. When the substrates are mechanically coupled, a given pair of positive features may provide a force in a plane of the other surface. Furthermore, by compressing the MCM so that the surfaces of the substrates are pushed toward each other, the mechanical coupling may be released.

Abstract translation: 描述了多芯片模块（MCM）。 该MCM包括至少两个基板，其通过在基板的相对表面上的正和负特征可重新机械耦合。 这些积极和消极的特征可以彼此交配和自锁。 例如，其中一个表面上的阳性特征可以包括成对的相对的微弹簧，并且负特征可以包括在另一个表面上的凹坑或凹槽。 当基板机械耦合时，给定的一对正特征可以在另一表面的平面中提供力。 此外，通过压缩MCM使得基板的表面彼此推动，可以释放机械联接。