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公开(公告)号：US20180277340A1
公开(公告)日：2018-09-27
申请号：US15948949
申请日：2018-04-09
Applicant: Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
Inventor： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
CPC classification number: H01J37/32568 , C23C16/26 , C23C16/5096 , H01J37/32183 , H01J37/3244 , H01J37/32669 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H01L21/02115 , H01L21/02274 , H01L21/0234 , H01L21/02351
Abstract: An electron beam plasma reactor includes a plasma chamber having a side wall, an upper electrode, a workpiece support to hold a workpiece facing the upper electrode with the workpiece on the support having a clear view of the upper electrode, a first RF power source coupled to said upper electrode, a gas supply, a vacuum pump coupled to the chamber to evacuate the chamber, and a controller. The controller is configured to operate the first RF power source to apply an RF power to upper electrode, and to operate the gas distributor and vacuum pump, so as to create a plasma in an upper portion of the chamber that generates an electron beam from the upper electrode toward the workpiece and a lower electron-temperature plasma in a lower portion of the chamber including the workpiece.
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公开(公告)号：US20170221775A1
公开(公告)日：2017-08-03
申请号：US15009705
申请日：2016-01-28
Applicant: Leonard Tedeschi , Kartik RAMASWAMY
Inventor： Leonard Tedeschi , Kartik RAMASWAMY
Abstract: Embodiments include process monitoring devices and methods of using such process monitoring devices. In one embodiment, the process monitoring device includes a substrate. The process monitoring device may also include a plurality of sensors formed on a support surface of the substrate. According to an embodiment, each sensor is capable of producing an output signal that corresponds to a processing condition. Furthermore, embodiments include a process monitoring device that includes a network interface device that is formed on the substrate. According to an embodiment each of the plurality of sensors is communicatively coupled to the network interface device. The network interface device allows for the output signals obtained from the sensors to be wirelessly transmitted to an external computer during processing operations.
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43.发明申请公开(公告)号：US20140356768A1
公开(公告)日：2014-12-04
申请号：US13904716
申请日：2013-05-29
Applicant: Banqiu WU , Ajay KUMAR , Amitabh SABHARWAL , Leonid DORF , Ming-Feng WU , Shahid RAUF , Kartik RAMASWAMY , Kenneth S. COLLINS , Omkaram NALAMASU
Inventor： Banqiu WU , Ajay KUMAR , Amitabh SABHARWAL , Leonid DORF , Ming-Feng WU , Shahid RAUF , Kartik RAMASWAMY , Kenneth S. COLLINS , Omkaram NALAMASU
IPC: G03F1/80
CPC classification number: G03F1/80
Abstract: Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support.
Abstract translation: 本发明的实施例通常提供使用带电束等离子体蚀刻光掩模的装置和方法。 在一个实施例中，用于在光掩模上执行带电束等离子体处理的装置包括具有室底部的处理室，限定内部容积的室顶板和室侧壁，设置在内部容积中的基板支撑基座，带电束产生 系统，邻近室侧壁设置，RF偏置电极设置在基板支撑件中。
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44.发明授权Component temperature control by coolant flow control and heater duty cycle control 有权组件温度控制由冷却液流量控制和加热器占空比控制公开(公告)号：US08880227B2
公开(公告)日：2014-11-04
申请号：US13040149
申请日：2011-03-03
Applicant: Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
Inventor： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
CPC classification number: G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。
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45.发明授权公开(公告)号：US08652297B2
公开(公告)日：2014-02-18
申请号：US13050481
申请日：2011-03-17
Applicant: Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
Inventor： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
IPC: C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H05B31/26
CPC classification number: H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。
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Patent Agency Ranking
公开(公告)号：US08382999B2
公开(公告)日：2013-02-26
申请号：US12711061
申请日：2010-02-23
Applicant: Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
Inventor： Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
CPC classification number: H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32706
Abstract: Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
Abstract translation: 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。
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47.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator 有权等离子体反应器，通过源功率或偏置功率RF发生器的同步调制实现等离子体负载阻抗调谐公开(公告)号：US08357264B2
公开(公告)日：2013-01-22
申请号：US12128963
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32183
Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
Abstract translation: 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。
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48.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权等离子体反应器，通过同步调制无与伦比的低功率射频发生器，实现等离子体负载阻抗调谐，实现工程瞬变公开(公告)号：US08337661B2
公开(公告)日：2012-12-25
申请号：US12128926
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32183
Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
Abstract translation: 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。
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公开(公告)号：US20120043023A1
公开(公告)日：2012-02-23
申请号：US13047052
申请日：2011-03-14
Applicant: Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
Inventor： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC: H01L21/306
CPC classification number: H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。
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50.发明授权Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources 有权等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源公开(公告)号：US08018164B2
公开(公告)日：2011-09-13
申请号：US12129155
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC: H01J7/24
CPC classification number: H05H1/36 , H01J37/32082 , H01J37/32183 , H01J37/32935 , H05H1/46
Abstract: Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
Abstract translation: 诸如负载阻抗的等离子体特性的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。
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