公开(公告)号：US20210215319A1

公开(公告)日：2021-07-15

申请号：US17216220

申请日：2021-03-29

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Melvin McLaurin ,  Troy Trottier

IPC: F21V9/32 ,  H01S5/062 ,  H01S5/343 ,  H01S5/00 ,  H01S5/34 ,  F21V7/30 ,  H01S5/40 ,  G02B27/09 ,  H04B10/116 ,  H04B10/50 ,  H01S5/0225 ,  H01S5/02251

Abstract: A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

公开(公告)号：US20210194214A1

公开(公告)日：2021-06-24

申请号：US17131132

申请日：2020-12-22

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01S5/343 ,  H01L33/00 ,  H01L21/02 ,  H01L21/784 ,  H01L33/12 ,  H01S5/22 ,  H01S5/042 ,  H01S5/02 ,  C30B29/40 ,  H01L33/32 ,  H01S5/02345

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US20250044507A1

公开(公告)日：2025-02-06

申请号：US18803277

申请日：2024-08-13

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Sten Heikman ,  Ryan Gresback ,  Julian Carey

IPC: G02B6/122 ,  F21K9/61 ,  F21K9/64 ,  F21K9/68 ,  F21V8/00 ,  F21V14/04 ,  H01S5/00 ,  H01S5/023 ,  H01S5/0233

Abstract: A laser-based fiber-coupled white light system is provided. The system includes a laser device comprising a gallium and nitrogen containing emitting region having an output facet configured to output a laser emission with a first wavelength ranging from 385 nm to 495 nm. The system further includes a phosphor member integrated with light collimation elements. The phosphor member converts the laser emission with the first wavelength to a phosphor emission with a second wavelength in either reflective or transmissive mode and mixed partially with laser emission to produce a white light emission. The system includes a transport fiber coupled to the phosphor member via the light collimation elements to receive the white light emission and deliver the white light emission remotely to one or more passive luminaries substantially free of electrical or moving parts disposed at remote distances from a dedicated source area.

公开(公告)号：US12126143B2

公开(公告)日：2024-10-22

申请号：US17320856

申请日：2021-05-14

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/0234 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0234 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/32308 ,  H01S5/04254 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/30 ,  H01S2301/173

Abstract: Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

公开(公告)号：US20240218989A1

公开(公告)日：2024-07-04

申请号：US18402715

申请日：2024-01-02

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Cole J. Cunnien ,  Eric Goutain ,  Sten Heikman ,  James W. Raring

IPC: F21S41/16 ,  F21S41/176 ,  F21S41/20 ,  F21S41/33 ,  F21S41/40

CPC classification number: F21S41/16 ,  F21S41/176 ,  F21S41/285 ,  F21S41/33 ,  F21S41/40

Abstract: The present techniques include a plurality of laser lamp modules. In an example, the plurality of laser lamp modules includes a high beam wide lamp module, a high beam narrow lamp module, a low beam cut lamp module, and a low beam wide lamp module, each of which has a blue laser, and is sealed from an outside environment for reliability.

公开(公告)号：US20240118508A1

公开(公告)日：2024-04-11

申请号：US18392922

申请日：2023-12-21

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Nicholas J. Pfister ,  James W. Raring

IPC: G02B6/43 ,  G02B6/42 ,  H01L25/075 ,  H04B10/40 ,  H04B10/80

CPC classification number: G02B6/43 ,  G02B6/425 ,  H01L25/0753 ,  H04B10/40 ,  H04B10/801

Abstract: A system with optical interconnects includes first and second optical transceivers. The first optical transceiver includes a first array of micro light emitting diodes (LEDs) arranged on a first carrier substrate, a first array of photodetectors (PDs), and a first driver integrated circuit (IC). The second optical transceiver includes a second array of micro LEDs arranged on a second carrier substrate, a second array of PDs, and a second driver IC. The system also includes at least one multicore fiber cable arranged to optically couple the first array of micro LEDs with the second array of PDs and to optically couple the second array of micro LEDs with the first array of PDs.

公开(公告)号：US11949212B2

公开(公告)日：2024-04-02

申请号：US17131132

申请日：2020-12-22

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01L33/00 ,  C30B29/40 ,  H01L21/02 ,  H01L21/784 ,  H01L33/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/02345 ,  H01S5/042 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/34333 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02647 ,  H01L21/784 ,  H01L33/0045 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/02345 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/02 ,  H01S2304/04

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US20240055835A1

公开(公告)日：2024-02-15

申请号：US17885478

申请日：2022-08-10

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Nicholas J. Pfister ,  Oscar Romero ,  Daming Liu ,  James W. Raring

IPC: H01S5/40 ,  H01S5/02253 ,  H01S5/024 ,  H01S5/12 ,  H01S5/323

CPC classification number: H01S5/4093 ,  H01S5/02253 ,  H01S5/02469 ,  H01S5/4012 ,  H01S5/12 ,  H01S5/4031 ,  H01S5/32316 ,  H01S5/32341 ,  H01S5/02476 ,  H01S5/02407

Abstract: In an example, the present invention provides a small form factor package comprising RGB laser diode devices configured with short cavity lengths. In an example, the present laser module includes at least a first red laser diode device, at least a second green laser diode device, and at least a third red laser diode device. At least one of the laser diode devices has a cavity length of less than 200 um, or less than 150 um, or less than 100 um. The optical output beams of the red, green, and blue laser diodes are combined into a single beam or colinear beams using optical techniques. The laser diode devices and the optical combining optics contained in a sealed package device. The sealed package device has a small form factor volume.

公开(公告)号：US20240027766A1

公开(公告)日：2024-01-25

申请号：US18116735

申请日：2023-03-02

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Paul Rudy ,  James W. Raring ,  Eric Goutain ,  Hua Huang

IPC: G02B27/01 ,  G02B6/00 ,  H01S5/40 ,  H01S5/32

CPC classification number: G02B27/0172 ,  G02B6/00 ,  G02B27/017 ,  H01S5/4093 ,  H01S5/320275 ,  G02B2027/0178 ,  G02B27/4272

Abstract: The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.

公开(公告)号：US11862939B1

公开(公告)日：2024-01-02

申请号：US17843104

申请日：2022-06-17

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22 ,  H01S5/042 ,  H01S5/0234 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/021 ,  H01S5/0206 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0234 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/222 ,  H01S5/2214 ,  H01S5/32308 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/30 ,  H01S2301/173 ,  H01S2302/00

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.