公开(公告)号：US09899153B2

公开(公告)日：2018-02-20

申请号：US14964654

申请日：2015-12-10

Applicant: STMicroelectronics (Tours) SAS

Inventor： Sylvain Charley

IPC: H01G7/06 ,  G01R15/16 ,  G05F5/00 ,  H03H5/12 ,  H03H7/01 ,  H04B1/04

CPC classification number: H01G7/06 ,  G01R15/165 ,  G05F5/00 ,  H03H5/12 ,  H03H7/0153 ,  H04B1/0458

Abstract: A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.

公开(公告)号：US20170288044A1

公开(公告)日：2017-10-05

申请号：US15362919

申请日：2016-11-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard

IPC: H01L29/747 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/747 ,  H01L29/408 ,  H01L29/66386

Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.

公开(公告)号：US20170287893A1

公开(公告)日：2017-10-05

申请号：US15252964

申请日：2016-08-31

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Arnaud Florence

IPC: H01L27/02 ,  H01L23/31 ,  H01L49/02 ,  H01L27/06 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L23/3114 ,  H01L27/0255 ,  H01L27/0676 ,  H01L28/40 ,  H01L29/866

Abstract: An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.

公开(公告)号：US20170230002A1

公开(公告)日：2017-08-10

申请号：US15252868

申请日：2016-08-31

Applicant: STMicroelectronics (Tours) SAS

Inventor： Sylvain Charley ,  Jerome Heurtier ,  Laurent Jeuffrault

IPC: H03B5/20

CPC classification number: H03B5/20 ,  H01G7/06 ,  H03B5/124 ,  H03B2201/011 ,  H03L7/1075

Abstract: A first capacitor has a capacitance adjustable to a set point value by application of a bias voltage. A second capacitor also has a capacitance adjustable to a set point value by application of a bias voltage. The first and second capacitors are arranged to receive the same bias voltage generated by a control circuit. The control circuit receiving the set point value as an input and generates that bias voltage in response to a quantity representative of a capacitance of the second capacitor.

公开(公告)号：US09543247B1

公开(公告)日：2017-01-10

申请号：US15051158

申请日：2016-02-23

Applicant: STMicroelectronics (Tours) SAS

Inventor： Olivier Ory

IPC: H01L23/52 ,  H01L29/06 ,  H01L29/16 ,  H01L23/528 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  H01L21/768 ,  H01L21/78

CPC classification number: H01L21/76843 ,  H01L21/302 ,  H01L21/3043 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/78 ,  H01L23/528 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/05 ,  H01L29/0657 ,  H01L29/16 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/0556 ,  H01L2224/05571 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/00014

Abstract: A surface-mount chip is formed by a silicon substrate having a front surface and a side. The chip includes a metallization intended to be soldered to an external device. The metallization has a first portion covering at least a portion of the front surface of the substrate and a second portion covering at least a portion of the side of the substrate. A porous silicon region is included in the substrate to separating the second portion of the metallization from the rest of the substrate.

Abstract translation: 表面安装芯片由具有正面和侧面的硅基板形成。 芯片包括用于焊接到外部设备的金属化。 金属化具有覆盖基板的前表面的至少一部分的第一部分和覆盖基板侧面的至少一部分的第二部分。 衬底中包括多孔硅区域以将金属化的第二部分与衬底的其余部分分离。

公开(公告)号：US09525361B2

公开(公告)日：2016-12-20

申请号：US14826627

申请日：2015-08-14

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier

IPC: H02M7/00 ,  H02M7/06 ,  H02M7/162 ,  H02M1/08 ,  H02M7/155

CPC classification number: H02M7/06 ,  H02M1/081 ,  H02M7/155 ,  H02M7/1623

Abstract: A rectifying circuit includes a first diode coupled between a first terminal configured to receive application of an A.C. voltage and a first terminal configured to deliver a rectified voltage; and an anode-gate thyristor coupled between a second terminal configured to receive application of the A.C. voltage and a second terminal configured to deliver the rectified voltage, wherein an anode of the anode-gate thyristor is connected to the second terminal configured to deliver the rectified voltage.

Abstract translation: 整流电路包括耦合在被配置为接收交流电压的施加的第一端子和被配置为传送整流电压的第一端子之间的第一二极管; 以及耦合在被配置为接收所述AC电压的施加的第二端子和被配置为传送整流电压的第二端子之间的阳极栅极晶闸管，其中所述阳极栅极晶闸管的阳极连接到所述第二端子，所述第二端子被配置为传送整流的 电压。

公开(公告)号：US20160344384A1

公开(公告)日：2016-11-24

申请号：US14957984

申请日：2015-12-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Samuel Menard

IPC: H03K17/735

CPC classification number: H03K17/735 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/747 ,  H03K17/06 ,  H03K17/16 ,  H03K17/725 ,  H03K17/74 ,  H03K2017/066

Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.

Abstract translation: 双向功率开关包括在开关的第一和第二导通端之间反向并联连接的第一和第二晶闸管。 第一晶闸管是阳极闸晶闸管，第二晶闸管是阴极闸极晶闸管。 第一和第二晶闸管的栅极通过相应的偶极子电路耦合到开关的相同控制端子。 偶极电路中的至少一个由至少一个二极管或至少一个电阻器形成。

公开(公告)号：US09455253B2

公开(公告)日：2016-09-27

申请号：US14730826

申请日：2015-06-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L27/08 ,  H01L23/528 ,  H01L29/747 ,  H01L29/08

CPC classification number: H01L27/0817 ,  H01L23/528 ,  H01L29/0834 ,  H01L29/747 ,  H01L2924/0002 ,  H01L2924/13033 ,  H01L2924/00

Abstract: A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

Abstract translation: 形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。 第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。 周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。 金属化连接第一和第二晶闸管的后表面。 绝缘结构位于第三晶闸管的后表面层与金属化之间。 绝缘结构在第一晶闸管的外围延伸。 绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

公开(公告)号：US20160183007A1

公开(公告)日：2016-06-23

申请号：US14849964

申请日：2015-09-10

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Sophie Ngo ,  Dominique Certon ,  Daniel Alquier

IPC: H04R19/00

CPC classification number: H04R19/00 ,  B06B1/0292 ,  H03H9/02228

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract translation: 声学电隔离装置包括能够传输声波的基板。 振动膜电声换能器的第一网络布置在基板的第一表面上。 振动膜电声换能器的第二网络布置在基板的第二相对表面上。 衬底的有效厚度相对于传播声波而在第一和第二表面之间呈现梯度。

公开(公告)号：US20160163659A1

公开(公告)日：2016-06-09

申请号：US14844626

申请日：2015-09-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Erwan Bruno ,  Abdelali Zaid

IPC: H01L23/66 ,  H01L21/84 ,  H01L21/306 ,  H01L27/02 ,  H01L27/12

CPC classification number: H01L23/66 ,  H01L21/30604 ,  H01L21/76264 ,  H01L21/76297 ,  H01L21/84 ,  H01L23/5222 ,  H01L23/5227 ,  H01L23/5228 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0688 ,  H01L27/08 ,  H01L27/0814 ,  H01L27/1203 ,  H01L2223/6661 ,  H01L2223/6672 ,  H01L2224/05572 ,  H01L2924/1421

Abstract: A device includes passive radio frequency components formed of portions of metal layers separated by insulating layers and crossed by vias. The insulating layers are positioned on an upper surface of an insulating substrate. Islands of a semiconductor material extend into the insulating substrate from the upper surface. Active integrated circuit components are formed in the islands.

Abstract translation: 一种装置包括由绝缘层隔开并与通孔隔开的部分金属层形成的无源射频分量。 绝缘层位于绝缘基板的上表面上。 半导体材料的岛从上表面延伸到绝缘基板中。 在岛上形成有源集成电路元件。