公开(公告)号：US20080089061A1

公开(公告)日：2008-04-17

申请号：US11754322

申请日：2007-05-28

Applicant: Chung-Chih Hsieh ,  Tsao-Yuan Fu ,  Chi-Sheng Lin ,  Wen-Yu Lin

Inventor： Chung-Chih Hsieh ,  Tsao-Yuan Fu ,  Chi-Sheng Lin ,  Wen-Yu Lin

IPC: F21V17/06 ,  F21S2/00

CPC classification number: G02F1/133608 ,  G02F1/133606

Abstract: A direct type backlight module including a frame, a plurality of light sources, an optical plate and an upper frame is provided. The frame includes a bottom frame and a side frame extending upward from the edge of the bottom frame. The light sources are disposed on the bottom frame, and the optical plate is disposed on the side frame above the light sources. The frame and the upper frame are assembled, wherein the optical plate is located between the upper frame and the frame. The upper frame has at lease one protrusion located above the optical plate and protruding to the optical plate. Therefore, the deformation of the optical plate can be reduced.

Abstract translation: 提供了包括框架，多个光源，光学板和上部框架的直接型背光模块。 框架包括底框架和从底框架的边缘向上延伸的侧框架。 光源设置在底架上，并且光学板设置在光源上方的侧框架上。 组装框架和上框架，其中光学板位于上框架和框架之间。 上框架具有至少一个位于光学板上方并突出到光学板的突起。 因此，可以减小光学板的变形。

公开(公告)号：US20080062721A1

公开(公告)日：2008-03-13

申请号：US11470634

申请日：2006-09-07

Applicant: Wen-Yu Lin

Inventor： Wen-Yu Lin

IPC: F21V7/04

CPC classification number: G02F1/133608 ,  G02F1/133603 ,  G02F1/133604

Abstract: A back light module includes a frame, multiple light sources and an optical film. The frame has a bottom and several laterals. The bottom having multiple holes is connected with the laterals. The light sources correspond to the holes, respectively, and are fixed inside the frame. The optical film is disposed on the frame and above the light sources.

Abstract translation: 背光模块包括框架，多个光源和光学膜。 框架有一个底部和几个边。 具有多个孔的底部与侧面连接。 光源分别对应于孔，并固定在框架内。 光学膜设置在框架上并且在光源上方。

公开(公告)号：US08580590B2

公开(公告)日：2013-11-12

申请号：US13434860

申请日：2012-03-30

Applicant: Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

Inventor： Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

IPC: H01L21/00

CPC classification number: H01L33/08 ,  H01L33/0079

Abstract: A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.

Abstract translation: 一种制造多色发光二极管器件的方法，包括以下步骤：在外延衬底上提供外延衬底和形成多重半导体层，其中所述多重半导体层包括n型半导体层，p型半导体层和 活动层 有源层发射第一波长的光。 此后，在多个半导体层上形成第一波长转换层。 第一波长转换层由半导体制成，并吸收一部分第一波长的光并发射第二波长的光，其中第二波长比第一波长长。

公开(公告)号：US20110210312A1

公开(公告)日：2011-09-01

申请号：US13106872

申请日：2011-05-13

Applicant: Po Min Tu ,  Shih Cheng Huang ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

Inventor： Po Min Tu ,  Shih Cheng Huang ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

IPC: H01L33/02

CPC classification number: H01L33/22 ,  H01L21/02658 ,  H01L33/06 ,  H01L33/32

Abstract: A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Abstract translation: 半导体发光器件包括衬底，缓冲层，n型半导体层，构象活性层和p型半导体层。 n型半导体层包括第一表面和第二表面，并且第一表面直接接触缓冲层。 第二表面包括多个凹部，以及形成在第二表面上和多个凹部内的构象活性层。 凹部的上部的宽度大于凹部的下部的宽度。 因此，可以用凹部来释放n型半导体层与构象活性层之间的应力。

公开(公告)号：US20110163295A1

公开(公告)日：2011-07-07

申请号：US13048905

申请日：2011-03-16

Applicant: PENG YI WU ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  SHIH HSIUNG CHAN

Inventor： PENG YI WU ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  SHIH HSIUNG CHAN

IPC: H01L33/06 ,  H01L29/06

CPC classification number: H01L21/02521 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer.

Abstract translation: 半导体包括半导体层，多个凹部和阻挡层。 通过蚀刻发生位错的半导体层的脆弱位置，在半导体层的表面上形成凹部。 阻挡层填充在每个凹部中。 半导体还包括从半导体层的表面生长而不覆盖阻挡层的再外延半导体层，并且再外延半导体层横向过度地朝向用于覆盖阻挡层的凹部的区域。

公开(公告)号：US20110012155A1

公开(公告)日：2011-01-20

申请号：US12836075

申请日：2010-07-14

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Peng Yi Wu ,  Wen Yu Lin ,  Chih Pang Ma ,  Tzu Chien Hong ,  Chia Hui Shen

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Peng Yi Wu ,  Wen Yu Lin ,  Chih Pang Ma ,  Tzu Chien Hong ,  Chia Hui Shen

IPC: H01L33/44 ,  H01L21/30

CPC classification number: H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.

Abstract translation: 提出了一种提高光提取效率的半导体光电结构及其制造方法。 半导体光电结构包括形成在半导体光电子结构的有源层下方的连续沟槽，以反射来自有源层的光，从而通过光输出表面引导更多的光，从而增加来自半导体光电子结构的光强度。

公开(公告)号：US20100090232A1

公开(公告)日：2010-04-15

申请号：US12577350

申请日：2009-10-12

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/08 ,  H01L33/0079

Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Abstract translation: 在发光器件的表面上形成波长转换层，用于将从发光器件发射的光的一部分变换为不同波长的光。 变换的光与未变换的光混合，因此发光器件可以发射具有优选CIE坐标的光。

公开(公告)号：US20090315067A1

公开(公告)日：2009-12-24

申请号：US12488875

申请日：2009-06-22

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/00 ,  H01L21/22

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02656 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.

Abstract translation: 公开了一种半导体器件制造方法。 提供缓冲层，在缓冲层上形成第一半导体层。 接下来，在外延工艺期间，通过掺杂剂以高浓度在第一半导体层上形成第一中间层。 第二半导体层覆盖在第一中间层上。 在第二半导体层上生长半导体发光器件。 中间层和第二半导体层的形成是一组步骤。

公开(公告)号：US20090280625A1

公开(公告)日：2009-11-12

申请号：US12437058

申请日：2009-05-07

Applicant: WEN YU LIN ,  SHIH CHENG HUANG ,  PO MIN TU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： WEN YU LIN ,  SHIH CHENG HUANG ,  PO MIN TU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L21/20

CPC classification number: H01L21/76256

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract translation: 公开了一种从衬底分离半导体的方法。 该方法包括以下步骤：在衬底上形成多个柱; 在多个柱上外延生长半导体; 并将蚀刻液注入到多个列之间的空隙中，以将半导体与基板分离。 本发明的方法可以提高从衬底分离半导体的蚀刻效率，并降低制造成本，因为蚀刻区域由于多个色谱柱之间的空隙而增加。 此外，该方法不会限制上述衬底的材料。

公开(公告)号：US20090166650A1

公开(公告)日：2009-07-02

申请号：US12343984

申请日：2008-12-24

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/04

CPC classification number: H01L33/007

Abstract: A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material.

Abstract translation: III族氮化物基半导体的发光器件包括衬底，第一III族氮化物层和第二III族氮化物层。 基板包括从第一表面突出的第一表面和多个凸部。 每个凸部被第一表面的一部分包围。 第一III族氮化物层通过从凸部的顶表面开始的横向生长共同形成。 第二III族氮化物层形成在第一表面上，其中第二III族氮化物层的厚度小于凸部的高度。 此外，第一III族氮化物层和第二III族氮化物层由相同的材料制成。