公开(公告)号：US07504335B2

公开(公告)日：2009-03-17

申请号：US11404058

申请日：2006-04-13

Applicant: Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

Inventor： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

IPC: H01L21/44

CPC classification number: H01L23/53238 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract translation: 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘附性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。

公开(公告)号：US20060266655A1

公开(公告)日：2006-11-30

申请号：US11425645

申请日：2006-06-21

Applicant: ZHI-WEN SUN ,  BO ZHENG ,  NICOLAY KOVARSKY ,  YOU WANG ,  TOSHIYUKI NAKAGAWA ,  TERUKAZU AITANI ,  KOJI HARA ,  DAXIN MAO ,  MICHAEL YANG

Inventor： ZHI-WEN SUN ,  BO ZHENG ,  NICOLAY KOVARSKY ,  YOU WANG ,  TOSHIYUKI NAKAGAWA ,  TERUKAZU AITANI ,  KOJI HARA ,  DAXIN MAO ,  MICHAEL YANG

IPC: C25D5/18

CPC classification number: C25D5/10 ,  C25D3/38 ,  C25D7/123

Abstract: Embodiments of the invention generally include a method and intermediate plating solution for plating metal onto a substrate surface. The method generally includes filling the features and/or growing a film layer on the field areas by plating a metal from a first solution on a seed layer under an applied first current, wherein the first solution includes an acid in an amount sufficient to provide a first solution pH of about 6 or less, copper ions, and at least one suppressor. The method may further include substantially filling features by plating metal ions from a second solution onto the substrate under an applied second current to form a metal layer, wherein the second solution includes an acid in an amount sufficient to provide a second solution pH of from about 0.6 to about 3, copper ions, at least one suppressor and at least one accelerator and growing a film layer on the field areas by contacting the metal layer with a third solution under an applied third current, wherein the third solution includes an acid, copper ions, at least one suppressor, at least one accelerator and at least one leveling agent. The intermediate plating solution generally includes copper sulfate in a concentration of from about 5 g/L to about 50 g/L, sulfuric acid in a concentration sufficient to provide a pH of less than about 6 and suppressors having a molecular weight of 600 or greater.

Abstract translation: 本发明的实施例通常包括用于将金属电镀到衬底表面上的方法和中间电镀溶液。 该方法通常包括通过在所施加的第一电流下在种子层上镀覆来自第一溶液的金属，在场区上填充特征和/或生长膜层，其中第一溶液包含足以提供 第一溶液pH为约6以下，铜离子和至少一种抑制剂。 该方法可以进一步包括基本上填充特征，通过在施加的第二电流下将金属离子从第二溶液镀覆到衬底上以形成金属层，其中第二溶液包括足以提供第二溶液的酸，pH约为 0.6至约3，铜离子，至少一种抑制剂和至少一种促进剂，并通过在施加的第三电流下使金属层与第三溶液接触而在场区上生长膜层，其中第三溶液包含酸，铜 至少一种抑制剂，至少一种促进剂和至少一种流平剂。 中间电镀溶液通常包含浓度为约5g / L至约50g / L的硫酸铜，其浓度足以提供小于约6的pH值，分子量为600或更大的抑制剂 。

公开(公告)号：US06986835B2

公开(公告)日：2006-01-17

申请号：US10287901

申请日：2002-11-04

Applicant: Todd Alan Balisky ,  Donald A. Cameron ,  Zhi-Wen Sun

Inventor： Todd Alan Balisky ,  Donald A. Cameron ,  Zhi-Wen Sun

IPC: G01N27/403

CPC classification number: G01N27/48

Abstract: A method and apparatus for analyzing plating solutions. The apparatus generally includes a plating cell, a reference electrolyte input, one or more external additive pumps, and a process controller. In one embodiment, the plating cell includes a cavity therein having a larger volumetric portion adjacent a smaller volumetric portion adapted to hold one or more solutions therein. The plating cell also includes a base disposed adjacent the bottom of the plating cell and adapted to receive and mix one or more test solutions as part of the plating solution analysis. In one configuration, the base includes electrical ports adapted to connect stimulation signals to a working electrode, counter electrode, and reference electrode disposed within the cell. The base also includes a thermal sensor in thermal contact with test solutions contained within the vessel.

Abstract translation: 一种用于分析电镀液的方法和装置。 该设备通常包括电镀槽，参考电解质输入，一个或多个外部添加剂泵以及过程控制器。 在一个实施例中，电镀单元包括其中具有较大体积部分的空腔，该体积部分邻近适于在其中容纳一种或多种溶液的较小体积部分。 电镀单元还包括邻近电镀单元的底部设置的底座，并且适合于接收和混合作为电镀溶液分析的一部分的一种或多种测试溶液。 在一种配置中，底座包括适于将刺激信号连接到设置在电池内的工作电极，对电极和参考电极的电气端口。 该基座还包括与容器内容纳的测试溶液热接触的热传感器。

公开(公告)号：US08784934B2

公开(公告)日：2014-07-22

申请号：US13305550

申请日：2011-11-28

Applicant: Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

IPC: B05D5/06

CPC classification number: C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。

公开(公告)号：US08609475B2

公开(公告)日：2013-12-17

申请号：US13602637

申请日：2012-09-04

Applicant: Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

Inventor： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

Abstract: Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

Abstract translation: 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US08580090B2

公开(公告)日：2013-11-12

申请号：US13332760

申请日：2011-12-21

Applicant: Alexander Gorer ,  Zhi-Wen Sun

Inventor： Alexander Gorer ,  Zhi-Wen Sun

IPC: C25D17/00 ,  C40B60/00

CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D21/10

Abstract: Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

Abstract translation: 描述了组合电化学沉积，包括将晶片分成多个用于组合处理的基板，将多个基板至少部分地浸入包括电解质的一个集成工具内的多个单元中，所述单元还包括浸入电解质中的电极 通过在基板和电极上施加电位而沉积在基板上，并且改变沉积的特性以执行组合处理。

公开(公告)号：US08551560B2

公开(公告)日：2013-10-08

申请号：US12471310

申请日：2009-05-22

Applicant: Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

Inventor： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC: C23C18/18 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50

CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US08545998B2

公开(公告)日：2013-10-01

申请号：US13333509

申请日：2011-12-21

Applicant: Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

Inventor： Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: B32B9/00 ,  B32B19/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

公开(公告)号：US20130136932A1

公开(公告)日：2013-05-30

申请号：US13305550

申请日：2011-11-28

Applicant: Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

IPC: B32B17/06 ,  B32B15/04 ,  C09K3/00 ,  C03C17/23 ,  B05D3/02 ,  C03C17/06 ,  B32B9/00 ,  B05D5/06

CPC classification number: C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

公开(公告)号：US20130065355A1

公开(公告)日：2013-03-14

申请号：US13204827

申请日：2011-09-12

Applicant: Haifan Liang ,  Jeroen Van Duren ,  Zhi-Wen Sun

Inventor： Haifan Liang ,  Jeroen Van Duren ,  Zhi-Wen Sun

IPC: H01L31/0264

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract translation: 使用激光退火技术形成铜铟镓（硫化物）硒化物（CIGS）太阳能电池，碲化镉（CdTe）太阳能电池和铜锌锡（硫化物）硒化物（CZTS））太阳能电池的方法来使吸收体和/或 缓冲层。 激光退火可能导致更好的结晶度，更低的表面粗糙度，更大的晶粒尺寸，更好的组成均匀性，复合中心的减少和增加的致密化。 另外，激光退火可能导致形成非平衡相，有利的结果。